Diodes DMP2022LSS User Manual

θ

Features

• Low On-Resistance

• 13m @ V

• 16m @ V

• 22m @ V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 4)

• Qualified to AEC-Q101 Standards for High Reliability

= -10V

GS

= -4.5V

GS

= -2.5V

GS

TOP VIEW

DMP2022LSS

SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.072g (approximate)

SO-8

S

S
S
G

TOP VIEW

Internal Schematic

D

D
D
D

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady

State
Pulsed Drain Current (Note 3)

T

= 25°C

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

DM

-20 V

±12

-10

-8

V
A

-35 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB.

2. No purposefully added lead.

3. Pulse width ≤10μS, Duty Cycle ≤1%.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

P

R

T

J, TSTG

D
JA

DMP2022LSS

Document number: DS31373 Rev. 5 - 2

1 of 5

www.diodes.com

2.5 W
50 °C/W

-55 to +150 °C

June 2010

© Diodes Incorporated

)

g

g

)

r

)

RAIN C

URREN

T

R

CUR

R

T

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

DSS

I

⎯ ⎯

DSS

I

GSS

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage (Note 5)

V

GS(th

R

DS (ON)

V

g

fs

SD

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

⎯

G

SWITCHING CHARACTERISTICS (Note 6)

Total Gate Charge
Gate-Source Charge

Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to product testing.

Q

⎯

g

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

30

25

-20

⎯ ⎯

-1

⎯ ⎯

±100

-0.6 0.77 -1.1 V

⎯

⎯
⎯

⎯

8 13
11 16
17 22
28

⎯

-0.5 0.68 -1.2 V

⎯
⎯
⎯

2444

594
556

2.0

28.1

56.9

3.4

11.9

⎯
⎯
⎯
⎯ Ω VGS = 0V VDS = 0V, f = 1MHz

⎯

⎯ VDS = -10V, VGS = -10V, ID = -10A
⎯ VDS = -10V, VGS = -10V, ID = -10A

7.5 15

9.9 20

108.0 216

76.5 153

30

25

V
μA
nA

mΩ

S

pF
pF
pF

nC

ns

V = -5V

DS

Pulsed

DMP2022LSS

V

= 0V, ID = -250μA

GS

= -20V, VGS = 0V

V

DS

V

= ±12V, VDS = 0V

GS

V

= VGS, ID = -250μA

DS

= -10V, ID = -10A

V

GS

VGS = -4.5V, ID = -9A

= -2.5V, ID = -8A

V

GS

V

= -10V, ID = -10A

DS

VGS = 0V, IS = -3A

= -10V, VGS = 0V

V

DS

f = 1.0MHz

= -10V, VGS = -4.5V, ID = -10A

V

DS

V

= -10V, VGS = -10V, ID = -10A

DS

= -15V, ID = -1A, VGS = -10V,

V

DD

R

= 6

GEN

(A)

20

(A)

20

EN

15

15

AIN

10

D

-I , D

5

0

0 0.5 1.0 1.5 2.0

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristic

10

D

-I , D
5

0

0.5 1 1.5 2 2.5

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

DMP2022LSS

Document number: DS31373 Rev. 5 - 2

2 of 5

www.diodes.com

June 2010

© Diodes Incorporated