Diodes DMP2018LFK User Manual

n

DMP2018LFK

Product Summary

I

V

R

(BR)DSS

-20V

DS(on)max

16m @ V

25m @ VGS = -2.0V

= -4.5V

GS

D

TA = 25°C

-12.8A

-10A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

NEW PRODUCT

• Power management functions

ADVANCE INFORMATION

• Notebook PC Applications

• Portable Equipment Applications

) and yet maintain superior switching

DS(on)

ESD PROTECTED TO 2kV

Pin 1, 2 = Source
Pin 3 = Gate
Pin 4, 5, 6 = Drain

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Low Input/Output Leakage

• ESD Protected Gate up to 2kV

• Lead Free by Design, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN2523-6

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Drai

U-DFN2523-6

Pin 1

Gate

Gate

Bottom View

Protection
Diode

Equivalent Circuit

Source

P-CHANNEL ENHANCEMENT MODE MOSFET

Ordering Information (Note 3)

Part Number Case Packaging

DMP2018LFK-7 U-DFN2523-6 3,000 / Tape & Reel

DMP2018LFK-13 U-DFN2523-6 10,000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P8

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

P8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)

YM

M = Month (ex: 9 = September)

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March 2012

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θ

DMP2018LFK

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -2.0V

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 6)
Repetitive Avalanche Energy (Note 6)

NEW PRODUCT

Steady

State

t<5s

Steady

State

t<5s

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

I

AS

E

AS

-20 V

±12 V

-9.2

-7.3

-12.8

-10.3

-7.1

-6

-10

-8.3

A

A

A

A

-3 A

-90 A
17 A
72 mJ

ADVANCE INFORMATION

Thermal Characteristics

Characteristic Symbol Value Units

T

= 25°C

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

A

TA = 70°C

Steady State

t<5s 60

T

= 25°C

A

TA = 70°C

Steady State

t<5s 29

P

R

P

R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

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1

0.63
126

2.1

1.3

W

°C/W

W

61

°C/W

6.4

-55 to 150 °C

March 2012

© Diodes Incorporated

)

g

g

g

)

r

)

R

CUR

R

T

R

C

URR

T

DMP2018LFK

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

-20 - - V

- - -1

- - ±2

VGS = 0V, ID = -10mA

μA

VDS = -20V, VGS = 0V

μA

VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

-0.45 - -1.2 V

- 10 16

- 12 20

- 13.6 25

- 20 -

10 17 - S

|

fs

- 0.7 1.2 V

VDS = -10V, ID = -200A

= -4.5V, ID = -3.6A

V

GS

V

= -2.5V, ID = -3.6A

mΩ

GS

V

= -2.0V, ID = -1.8A

GS

V

= -1.5V, ID = -1A

GS

VDS = -10V, ID = -3.6A

VGS = 0V, IS = -3.6A
DYNAMIC CHARACTERISTICS (Note 8)

NEW PRODUCT

Input Capacitance
Output Capacitance

ADVANCE INFORMATION

Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = -10V) Qg
Total Gate Charge (VGS = -4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. UIS in production with L = 0.5mH, TJ = 25°C
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q
Q

t

D(on

t

D(off

s
d

t

t

f

- 4748 -

- 833 -

- 339 -

- 6.2 -

- 113 -

- 53 -

- 7.1 -

- 8.5 -

- 22.8 -

- 29.8 -

- 240.8 -

- 100.6 -

V

= -10V, VGS = 0V,

pF

Ω

nC

ns

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz

= -16V, ID = -7.2A

V

DS

= -10V, VGS = -4.5V,

V

DD

= 4.7, ID = -3.6A

R

G

30

V = -5V

(A)

25

20

DS

EN

15

AIN

10

D

-I , D
5

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

T = 85°C

A

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

T = 25°C

A

T = -55°C

A

(A)
EN

30

25

20

V = -10V

GS

V = -4.5V

GS

V = -2.5V

GS

V = -2.0V

GS

V = -1.5V

GS

15

AIN

10

D

-I , D
5

0

00.511.52

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Ch ar acterist ic

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

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© Diodes Incorporated