Diodes DMP2018LFK User Manual

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n
DMP2018LFK
Product Summary
I
V
R
(BR)DSS
-20V
DS(on)max
16m @ V
25m @ VGS = -2.0V
= -4.5V
GS
D
TA = 25°C
-12.8A
-10A
Description and Applications
This new generation MOSFET has been designed to minimize the on­state resistance (R performance, making it ideal for high efficiency power management
applications.
DC-DC Converters
NEW PRODUCT
Power management functions
Notebook PC Applications
Portable Equipment Applications
) and yet maintain superior switching
DS(on)
ESD PROTECTED TO 2kV
Pin 1, 2 = Source Pin 3 = Gate Pin 4, 5, 6 = Drain
Features and Benefits
Low On-Resistance
Low Input Capacitance
Low Input/Output Leakage
ESD Protected Gate up to 2kV
Lead Free by Design, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2523-6
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Drai
U-DFN2523-6
Pin 1
Gate
Gate
Bottom View
Protection Diode
Equivalent Circuit
Source
P-CHANNEL ENHANCEMENT MODE MOSFET
Ordering Information (Note 3)
Part Number Case Packaging
DMP2018LFK-7 U-DFN2523-6 3,000 / Tape & Reel
DMP2018LFK-13 U-DFN2523-6 10,000 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
P8
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
P8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011)
YM
M = Month (ex: 9 = September)
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θ
DMP2018LFK
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.0V
Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 6) Repetitive Avalanche Energy (Note 6)
NEW PRODUCT
Steady
State
t<5s
Steady
State
t<5s
T
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
T
= 25°C
A
T
= 70°C
A
= 25°C
T
A
= 70°C
T
A
V
DSS
V
GSS
I
D
I
D
I
D
I
D
I
S
I
DM
I
AS
E
AS
-20 V
±12 V
-9.2
-7.3
-12.8
-10.3
-7.1
-6
-10
-8.3
A
A
A
A
-3 A
-90 A 17 A 72 mJ
Thermal Characteristics
Characteristic Symbol Value Units
T
= 25°C
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
A
TA = 70°C
Steady State
t<5s 60
T
= 25°C
A
TA = 70°C
Steady State
t<5s 29
P
R
P
R R
T
J, TSTG
D
JA
θ
D
JA
θ
JC
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1
0.63 126
2.1
1.3
W
°C/W
W
61
°C/W
6.4
-55 to 150 °C
March 2012
© Diodes Incorporated
Page 3
)
g
g
g
)
r
)
R
CUR
R
T
R
C
URR
T
DMP2018LFK
Electrical Characteristics @ T
= 25°C unless otherwise stated
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage
BV
I
DSS DSS GSS
-20 - - V
- - -1
- - ±2
VGS = 0V, ID = -10mA
μA
VDS = -20V, VGS = 0V
μA
VGS = ±10V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y V
SD
-0.45 - -1.2 V
- 10 16
- 12 20
- 13.6 25
- 20 -
10 17 - S
|
fs
- 0.7 1.2 V
VDS = -10V, ID = -200A
= -4.5V, ID = -3.6A
V
GS
V
= -2.5V, ID = -3.6A
mΩ
GS
V
= -2.0V, ID = -1.8A
GS
V
= -1.5V, ID = -1A
GS
VDS = -10V, ID = -3.6A
VGS = 0V, IS = -3.6A DYNAMIC CHARACTERISTICS (Note 8)
NEW PRODUCT
Input Capacitance Output Capacitance
Reverse Transfer Capacitance Gate Resistance
C
iss
C
oss
C
rss
R Total Gate Charge (VGS = -10V) Qg Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 6. UIS in production with L = 0.5mH, TJ = 25°C 7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Q Q
t
D(on
t
D(off
s d
t
t
f
- 4748 -
- 833 -
- 339 -
- 6.2 -
- 113 -
- 53 -
- 7.1 -
- 8.5 -
- 22.8 -
- 29.8 -
- 240.8 -
- 100.6 -
V
= -10V, VGS = 0V,
pF
Ω
nC
ns
DS
f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz
= -16V, ID = -7.2A
V
DS
= -10V, VGS = -4.5V,
V
DD
= 4.7, ID = -3.6A
R
G
30
V = -5V
(A)
25
20
DS
EN
15
AIN
10
D
-I , D 5
0
0 0.5 1 1.5 2 2.5 3
T = 150°C
A
T = 125°C
A
T = 85°C
A
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
T = 25°C
A
T = -55°C
A
(A) EN
30
25
20
V = -10V
GS
V = -4.5V
GS
V = -2.5V
GS
V = -2.0V
GS
V = -1.5V
GS
15
AIN
10
D
-I , D 5
0
00.511.52
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Ch ar acterist ic
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
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Page 4
R
R
OUR
CE ON-R
T
C
R
RAIN-SOUR
CE O
N-R
TAN
C
R
R
OUR
CE ON-R
TANC
OUR
CE C
URR
N
T
DMP2018LFK
0.03
Ω
E ( ) AN
Ω
E ( )
0.03
V = -4.5V
GS
ESIS
0.02
V = -2.5V
GS
0.01
AIN-S
V = -10VGSV = -4.5V
GS
, D
DS(ON)
0
NEW PRODUCT
0 5 10 15 20 25 30
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain C urrent an d G ate V oltage
1.7
1.5
V = -5V
GS
I = -5A
1.3
1.1
0.9
DSON
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.7
0.5
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 On-Resistance Variation with Temperature
D
V = -10V
GS
I = -10A
D
1.4
ESIS
0.02
T = 150°C
A
T = 125°C
T = 85°C
0.01
T = 25°C
T = -55°C
, D
DS(ON)
0
0 5 10 15 20 25 30
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.020
Ω
0.018
E ( )
0.016
0.014
ESIS
0.012
V = -5V
GS
I = -5A
D
0.010
V = -10V
0.008
0.006
AIN-S
0.004
, D
0.002
DSON
0
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
GS
I = -10A
D
A
Fig. 6 On- Resistance Varia tion with Temperat ur e
30
A A
A
A
1.2
1.0
25
(A)
T = 25°C
20
E
A
0.8
15
I = -250µA
I = -1mA
D
D
10
S
-I , S 5
0.6
0.4
0.2
GS(TH)
-V , GATE THRESH OLD VO LTA G E (V) 0
-50 -25 0 25 50 75 100 125 150
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
0
0.2 0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
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C, C
P
C
T
N
C
F
GE CUR
R
T
GAT
OUR
C
OLTAG
R
CUR
RENT
T
R
T
T
HER
R
TANC
DMP2018LFK
10,000
f = 1MHz
C
iss
)
E (p A
I
1,000
A
C
oss
A
C
rss
100
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
NEW PRODUCT
DS
Fig. 9 Typical Total Capacitance
10
100,000
T = 150°C
10,000
A
(nA)
T = 125°C
EN
A
1,000
T = 85°C
A
100
DSS
10
-I , LEAKA
T = 25°C
1
048121620
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Leakage Current
A
vs. Drain-Source Voltage
100
R
DS(on)
Limited
8
E (V)
V = -16V
DS
I = -7.2A
D
6
E V
4
E-S
2
GS
-V ,
0
020406080100120
Q , TOTAL GA TE CHARGE (nC)
g
Fig. 11 Gate-Charge Characteristics
10
(A)
AIN
D
I, D
0.01
DC
P = 10s
W
P = 1s
W
1
0.1
P = 100ms
W
T = 150°C
J(max)
T = 25°C
A
Single Pulse
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10sWµ
0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 12 Safe Operat i on Area
1
E
D = 0.7
D = 0.5 D = 0.3
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
0.001
D = Single Pulse
0.00001 0.0001
0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)
1
D = 0.9
R (t) = r(t) *
θ
JA
R = 61°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
Fig. 13 Transient Thermal Response
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
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Page 6
DMP2018LFK
Package Outline Dimensions
NEW PRODUCT
A
D
e
A1
L (3x)
A3
U-DFN2523-6
Dim Min Max Typ
A 0.57 0.63 0.60
A1 0 0.05 0.02 A3
0.152
b 0.25 0.35 0.30 D 2.45 2.55 2.50
Pin #1 ID
E
R0.150
E1
D1
D1 1.55 1.65 1.60
e
0.65
E 2.25 2.35 2.30
E1 1.18 1.28 1.23
L 0.30 0.40 0.35
L1 0.30 0.40 0.35
L1 (2x)
b (6x)
All Dimensions in mm
Suggested Pad Layout
Y2
Y3
X1
Y1
Dimensions Value (in mm)
C 0.650 X 0.400
X1 1.700
Y 0.650 Y1 0.450 Y2 1.830 Y3 2.700
Y
C
X
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
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DMP2018LFK
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
NEW PRODUCT
noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
IMPORTANT NOTICE
LIFE SUPPORT
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
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