Diodes DMP2018LFK User Manual

n

DMP2018LFK

Product Summary

I

V

R

(BR)DSS

-20V

DS(on)max

16m @ V

25m @ VGS = -2.0V

= -4.5V

GS

D

TA = 25°C

-12.8A

-10A

Description and Applications

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

NEW PRODUCT

• Power management functions

ADVANCE INFORMATION

• Notebook PC Applications

• Portable Equipment Applications

) and yet maintain superior switching

DS(on)

ESD PROTECTED TO 2kV

Pin 1, 2 = Source Pin 3 = Gate Pin 4, 5, 6 = Drain

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Low Input/Output Leakage

• ESD Protected Gate up to 2kV

• Lead Free by Design, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-DFN2523-6

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

Drai

U-DFN2523-6

Pin 1

Gate

Bottom View

Protection Diode

Equivalent Circuit

Source

P-CHANNEL ENHANCEMENT MODE MOSFET

Ordering Information (Note 3)

Part Number Case Packaging

DMP2018LFK-7 U-DFN2523-6 3,000 / Tape & Reel

DMP2018LFK-13 U-DFN2523-6 10,000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P8

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

P8 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011)

YM

M = Month (ex: 9 = September)

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θ

DMP2018LFK

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -2.0V

Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%) Avalanche Current (Note 6) Repetitive Avalanche Energy (Note 6)

NEW PRODUCT

Steady

State

t<5s

Steady

State

t<5s

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

S

I

DM

I

AS

E

AS

-20 V

±12 V

-9.2

-7.3

-12.8

-10.3

-7.1

-6

-10

-8.3

A

-3 A

-90 A 17 A 72 mJ

ADVANCE INFORMATION

Thermal Characteristics

Characteristic Symbol Value Units

T

= 25°C

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

A

TA = 70°C

Steady State

t<5s 60

T

= 25°C

A

TA = 70°C

Steady State

t<5s 29

P

R

P

R R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

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1

0.63 126

2.1

1.3

W

°C/W

W

61

°C/W

6.4

-55 to 150 °C

March 2012

)

g

)

r

)

R

CUR

R

T

R

C

URR

T

DMP2018LFK

Electrical Characteristics @ T

= 25°C unless otherwise stated

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

I

DSS DSS GSS

-20 - - V

- - -1

- - ±2

VGS = 0V, ID = -10mA

μA

VDS = -20V, VGS = 0V

μA

VGS = ±10V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

SD

-0.45 - -1.2 V

- 10 16

- 12 20

- 13.6 25

- 20 -

10 17 - S

|

fs

- 0.7 1.2 V

VDS = -10V, ID = -200A

= -4.5V, ID = -3.6A

V

GS

V

= -2.5V, ID = -3.6A

mΩ

GS

V

= -2.0V, ID = -1.8A

GS

V

= -1.5V, ID = -1A

GS

VDS = -10V, ID = -3.6A

VGS = 0V, IS = -3.6A DYNAMIC CHARACTERISTICS (Note 8)

NEW PRODUCT

Input Capacitance Output Capacitance

ADVANCE INFORMATION

Reverse Transfer Capacitance Gate Resistance

C

iss

C

oss

C

rss

R Total Gate Charge (VGS = -10V) Qg Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 6. UIS in production with L = 0.5mH, TJ = 25°C 7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q Q

t

D(on

t

D(off

s d

t

f

- 4748 -

- 833 -

- 339 -

- 6.2 -

- 113 -

- 53 -

- 7.1 -

- 8.5 -

- 22.8 -

- 29.8 -

- 240.8 -

- 100.6 -

V

= -10V, VGS = 0V,

pF

Ω

nC

ns

DS

f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz

= -16V, ID = -7.2A

V

DS

= -10V, VGS = -4.5V,

V

DD

= 4.7, ID = -3.6A

R

G

30

V = -5V

(A)

25

20

DS

EN

15

AIN

10

D

-I , D 5

0

0 0.5 1 1.5 2 2.5 3

T = 150°C

A

T = 125°C

A

T = 85°C

A

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristic

T = 25°C

A

T = -55°C

A

(A) EN

30

25

20

V = -10V

GS

V = -4.5V

GS

V = -2.5V

GS

V = -2.0V

GS

V = -1.5V

GS

15

AIN

10

D

-I , D 5

0

00.511.52

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Ch ar acterist ic

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

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R

OUR

CE ON-R

T

C

R

RAIN-SOUR

CE O

N-R

TAN

C

R

OUR

CE ON-R

TANC

OUR

CE C

URR

N

T

DMP2018LFK

0.03

Ω

E ( ) AN

Ω

E ( )

0.03

V = -4.5V

GS

ESIS

0.02

V = -2.5V

GS

0.01

AIN-S

V = -10VGSV = -4.5V

GS

, D

DS(ON)

0

NEW PRODUCT

ADVANCE INFORMATION

0 5 10 15 20 25 30

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On-Resistance

vs. Drain C urrent an d G ate V oltage

1.7

1.5

V = -5V

GS

I = -5A

1.3

1.1

0.9

DSON

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

0.7

0.5

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 5 On-Resistance Variation with Temperature

D

V = -10V

GS

I = -10A

D

1.4

ESIS

0.02

T = 150°C

A

T = 125°C

T = 85°C

0.01

T = 25°C

T = -55°C

, D

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

0.020

Ω

0.018

E ( )

0.016

0.014

ESIS

0.012

V = -5V

GS

I = -5A

D

0.010

V = -10V

0.008

0.006

AIN-S

0.004

, D

0.002

DSON

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

GS

I = -10A

D

A

Fig. 6 On- Resistance Varia tion with Temperat ur e

30

A A

A

1.2

1.0

25

(A)

T = 25°C

20

E

A

0.8

15

I = -250µA

I = -1mA

D

10

S

-I , S 5

0.6

0.4

0.2

GS(TH)

-V , GATE THRESH OLD VO LTA G E (V) 0

-50 -25 0 25 50 75 100 125 150

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

T , AMBIENT TEMPERATURE (°C)

A

0

0.2 0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

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C, C

P

C

T

N

C

F

GE CUR

R

T

GAT

OUR

C

OLTAG

R

CUR

RENT

T

R

T

HER

R

TANC

DMP2018LFK

10,000

f = 1MHz

C

iss

)

E (p A

I

1,000

A

C

oss

A

C

rss

100

0 5 10 15 20

-V , DRAIN-SOURCE VOLTAGE (V)

NEW PRODUCT

DS

Fig. 9 Typical Total Capacitance

ADVANCE INFORMATION

10

100,000

T = 150°C

10,000

A

(nA)

T = 125°C

EN

A

1,000

T = 85°C

A

100

DSS

10

-I , LEAKA

T = 25°C

1

048121620

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Leakage Current

A

vs. Drain-Source Voltage

100

R

DS(on)

Limited

8

E (V)

V = -16V

DS

I = -7.2A

D

6

E V

4

E-S

2

GS

-V ,

0

020406080100120

Q , TOTAL GA TE CHARGE (nC)

g

Fig. 11 Gate-Charge Characteristics

10

(A)

AIN

D

I, D

0.01

DC

P = 10s

W

P = 1s

W

1

0.1

P = 100ms

W

T = 150°C

J(max)

T = 25°C

A

Single Pulse

P = 10ms

W

P = 1ms

W

P = 100µs

W

P = 10sWµ

0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 12 Safe Operat i on Area

1

E

D = 0.7

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

0.001

D = Single Pulse

0.00001 0.0001

0.001 0.01 0.1 1 10 100 1,000 t , PULSE DURATION TIME (s)

1

D = 0.9

R (t) = r(t) *

θ

JA

R = 61°C/W

JA

P(pk)

t

1

t

2

T - T = P * R (t)

JA JA12θ

Duty Cycle, D = t /t

R

θθJA

Fig. 13 Transient Thermal Response

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

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March 2012

DMP2018LFK

Package Outline Dimensions

NEW PRODUCT

ADVANCE INFORMATION

A

D

e

A1

L (3x)

A3

U-DFN2523-6

Dim Min Max Typ

A 0.57 0.63 0.60

A1 0 0.05 0.02 A3

− −

0.152

b 0.25 0.35 0.30 D 2.45 2.55 2.50

Pin #1 ID

E

R0.150

E1

D1

D1 1.55 1.65 1.60

e

− −

0.65

E 2.25 2.35 2.30

E1 1.18 1.28 1.23

L 0.30 0.40 0.35

L1 0.30 0.40 0.35

L1 (2x)

b (6x)

All Dimensions in mm

Suggested Pad Layout

Y2

Y3

X1

Y1

Dimensions Value (in mm)

C 0.650 X 0.400

X1 1.700

Y 0.650 Y1 0.450 Y2 1.830 Y3 2.700

Y

C

X

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

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DMP2018LFK

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

NEW PRODUCT

noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP2018LFK

Document number: DS35357 Rev. 5 - 2

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