Diodes DMP2012SN User Manual

n

Product Summary

I

V

R

(BR)DSS

-20V

DS(on)

0.3Ω @ V

0.5Ω @ VGS= -2.5V

= -4.5V

GS

T

= +25°C

A

-0.9A

-0.7A

D

Description

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

Applications

 DC-DC Converters
 Power management functions

ESD PROTECTED

SC59

Top View

DMP2012SN

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed

 ESD Protected Gate
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SC59
 Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020C
 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminal Connections: See Diagram
 Weight: 0.014 grams (approximate)

D

Gate

G

Top View

Pin-Out

S

e3

Drai

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Compliance Case Packaging

DMP2012SN-7 Standard SC59 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code T U V W X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2012SN

Document number: DS30790 Rev. 7 - 2

PS1

YM

www.diodes.com

PS1 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September

1 of 5

September 2013

© Diodes Incorporated



)

)

)

r

DMP2012SN

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Steady State
Pulsed Drain Current (Note 6)

V

DSS

V

GSS

I

D

I

DM

-20 V

12

V

-0.7 A

-2.8 A

Thermal Characteristics

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

JA

, T

T

J

STG

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

-20

 
 

 

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.5


| 





0.23

0.37

1.5

-0.8 -1.1 V

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss





178.5

26.3

18.8

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB.

6. Pulse width 10µS, Duty Cycle 1%.

7. Short duration pulse test used to minimize self-heating effect.

DMP2012SN

Document number: DS30790 Rev. 7 - 2

t

D(ON

t

D(OFF

t
t

f

2 of 5

www.diodes.com






10.4
175

22.3

64

500 mW
250 °C/W

-55 to +150 °C

V

VGS = 0V, ID = -250µA

-10 µA

10

-1.2 V

0.30

0.50














V

= -20V, VGS = 0V

DS

µA

V

= 12V, VDS = 0V

GS

V

= VGS, ID = -250µA

DS

= -4.5V, ID = -0.4A

V

GS

Ω

V

= -2.5V, ID = -0.4A

GS

S

VDS = -10V, ID = -0.4A
V

= 0V, IS = -0.7A

GS

pF

V

= -10V, VGS = 0V

DS

pF

= 1.0MHz

f

pF

ns
ns

V

= -10V, ID = -0.4A,

DD

ns

V

= -5.0V, R

GS

ns

= 50Ω

GEN

September 2013

© Diodes Incorporated