Diodes DMP2008UFG User Manual

DMP2008UFG

20V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

®

Product Summary

I

max

D

V

R

(BR)DSS

-20V

9.8m @ VGS = -2.5V

13m @ VGS = -1.8V

17m @ VGS = -1.5V

DS(ON)

8m @ V

max

= -4.5V

GS

TA = +25°C

-12A

-10A

-9.3A

-8.3A

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

ADVANCE INFORMATION

Applications

 Load Switch

 Power Management Functions

ADVANCE INFORMATION

Top View

POWERDI3333-8

D

D

D

Features

 Low R

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

 Case: POWERDI3333-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Drain

Pin 1

S

S

S

G

Gate

D

Bottom View Internal Schematic

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMP2008UFG-7 POWERDI3333-8 2000/Tape & Reel

DMP2008UFG-13 POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMP2008UFG

Document number: DS35694 Rev. 13 - 2

S36 = Product Type Marking Code
YYWW = Date Code Marking

YYWW

YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)

S36

1 of 6

www.diodes.com

June 2013

© Diodes Incorporated

)

g

g

)

r

)

r

r

DMP2008UFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage (Note 5)

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8)
Avalanche Energy (Note 8)

= +25°C

T

A

T

= +70°C

A

= +25°C

T

C

V

DSS

V

GSS

I

D

I

DM

I

S

I

AS

E

AS

-20 V
±8 V

-12

-9.5

A

-54

-80 A

-2.2 A

-15 A

-113 mJ

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient

ADVANCE INFORMATION

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

A

TC = +25°C

(Note 5)
(Note 6) 137

P

R

R

T

J, TSTG

D

Θ

JA

Θ

JC

2.2
41

W

59

°C/W

3.0

-55 to +150 °C

ADVANCE INFORMATION

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20 — — V
— — -1
— — ±100 nA

VGS = 0V, ID = -250µA

µA

V

= -16V, VGS = 0V

DS

VGS = 8V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

V

GS(th

R

DS (ON)

|Y

fs

-0.4 — -1.0 V
— — 8
— — 9.8
— — 13
— — 17

|

— 42 — S

VDS = VGS, ID = -250µA

= -4.5V, ID = -12A

V

GS

V

= -2.5V, ID = -10A

m

GS

V

= -1.8V, ID = -9.3A

GS

V

= -1.5V, ID = -8.3A

GS

V

= -5V, ID = -12A

DS

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

C

oss

C

rss

R
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -2.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Q
Q

t

D(on

t

D(off

t

t

iss

G

s

d

f

— 6909 —
—
—
—
—
—
—
—
—
—
—
—

635
563

2.5
72
40

8.6

14.5
22
33

291
124

—
—
—
—
—
—
—
—
—
—
—

= -10V, VGS = 0V

V

pF



nC

ns

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= -10V, ID = -12A

DD

V

= -4.5V, VDD = -10V,

GS

R

= 6, ID = -12A

G

BODY DIODE CHARACTERISTICS

Diode Forward Voltage VSD

Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)

Notes: 5. AEC-Q101 VGS maximum is 6.4V.

while R

POWERDI is a registered trademark of Diodes Incorporated

6. R

is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R

Θ

JA

is determined by the user’s board design.

Θ

7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, T

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

JA

= +25°C

J

t

r

Q

r

DMP2008UFG

Document number: DS35694 Rev. 13 - 2

— -0.7 — V
— -0.7 — V
—
—

25
15

— ns
— nC

2 of 6

www.diodes.com

= 0V, IS = -12A

V

GS

V

= 0V, IS = -2A

GS

IF = -12A, di/dt = 100A/µs
IF = -12A, di/dt = 100A/µs

is guaranteed by design

Θ

JC

© Diodes Incorporated

June 2013