Diodes DMP2006UFG User Manual
Y
DMP2006UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
I
max
D
V
R
(BR)DSS
-20V
5.2mΩ @ V
7.5mΩ @ VGS = -2.5V
DS(ON)
max
= -4.5V
GS
TC = +25°C
-40A
-40A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
) and yet maintain superior switching performance, making it
DS(on)
ideal for high efficiency power management applications.
Applications
ADVANCE INFORMATION
Load Switch
Power Management Functions
ADVANCE INFORMATION
Top View
POWERDI3333-8
D
D
D
Features
Low R
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
– ensures on state losses are minimized
DS(ON)
Mechanical Data
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Pin 1
S
S
S
G
D
G
D
Bottom View Equivalent Circuit
S
Ordering Information (Note 4)
Part Number Case Packaging
DMP2006UFG-7 POWERDI3333-8 2000/Tape & Reel
DMP2006UFG-13 POWERDI3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
POWERDI is a registered trademark of Diodes Incorporated
DMP2006UFG
Document number: DS36802 Rev. 2 - 2
S47 = Product Type Marking Code
YWW
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
S47
1 of 6
www.diodes.com
April 2014
© Diodes Incorporated
)
g
g
)
r
)
r
r
DMP2006UFG
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage (Note 5)
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8) L=0.1mH
Avalanche Energy (Note 8) L=0.1mH
= +25°C
T
A
T
= +70°C
A
= +25°C
T
C
V
DSS
V
GSS
I
D
I
DM
I
S
I
AS
E
AS
-20 V
±10 V
-17.5
-14.0
A
-40
-80 A
-2.2 A
-23 A
28 mJ
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
= +25°C
T
Total Power Dissipation (Note 6)
ADVANCE INFORMATION
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
ADVANCE INFORMATION
A
TC = +25°C
(Note 6)
(Note 7) 136
P
R
R
T
J, TSTG
θJA
θJC
D
2.3
41
W
54
°C/W
3.0
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-20 — — V
— — -1
— — ±100 nA
VGS = 0V, ID = -250µA
µA
V
= -16V, VGS = 0V
DS
VGS = 8V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
GS(th
R
DS (ON)
Diode Forward Voltage VSD — -0.7 -1.2 V
-0.4 — -1.0 V
— 4.2 5.2
— 5.4 7.5
— 7 —
VDS = VGS, ID = -250µA
= -4.5V, ID = -15A
V
mΩ
GS
V
= -2.5V, ID = -10A
GS
V
= -1.8V, ID = -1A
GS
V
= 0V, IS = -10A
GS
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
C
oss
C
rss
R
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
Notes: 5. AEC-Q101 VGS maximum is ±8V
while R
6. R
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
θJA
is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L =0.1mH, T
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
θJA
= +25°C
J
Q
Q
t
D(on
t
D(off
t
t
t
Q
iss
G
s
d
f
r
r
— 5404 —
—
—
—
—
—
—
—
—
—
—
—
—
—
728
612
3.8
64
140
8.5
17
9.1
19
146
104
61
44
V
—
pF
—
— Ω
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
—
—
—
nC
V
DD
—
—
—
—
ns
V
GS
R
G
—
— ns
— nC
IF = -10A, di/dt = 100A/µs
IF = -10A, di/dt = 100A/µs
= -10V, VGS = 0V
= -10V, ID = -20A
= -4.5V, VDD = -10V,
= 1Ω, RG = 1Ω ID = -10A
is guaranteed by design
θJC
POWERDI is a registered trademark of Diodes Incorporated
DMP2006UFG
Document number: DS36802 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
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