Diodes DMP2006UFG User Manual

Y

DMP2006UFG

20V P-CHANNEL ENHANCEMENT MODE MOSFET

POWERDI

®

Product Summary

I

max

D

V

R

(BR)DSS

-20V

5.2mΩ @ V

7.5mΩ @ VGS = -2.5V

DS(ON)

max

= -4.5V

GS

TC = +25°C

-40A

-40A

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

ADVANCE INFORMATION

 Load Switch

 Power Management Functions

ADVANCE INFORMATION

Top View

POWERDI3333-8

D

D

D

Features

 Low R

 Small form factor thermally efficient package enables higher

density end products

 Occupies just 33% of the board area occupied by SO-8 enabling

smaller end product

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 standards for High Reliability

– ensures on state losses are minimized

DS(ON)

Mechanical Data

 Case: POWERDI3333-8

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections Indicator: See diagram

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Pin 1

S

S

S

G

D

G

D

Bottom View Equivalent Circuit

S

Ordering Information (Note 4)

Part Number Case Packaging

DMP2006UFG-7 POWERDI3333-8 2000/Tape & Reel

DMP2006UFG-13 POWERDI3333-8 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

POWERDI is a registered trademark of Diodes Incorporated

DMP2006UFG

Document number: DS36802 Rev. 2 - 2

S47 = Product Type Marking Code

YWW

YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)

S47

1 of 6

www.diodes.com

April 2014

© Diodes Incorporated

)

g

g

)

r

)

r

r

DMP2006UFG

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage (Note 5)

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 8) L=0.1mH
Avalanche Energy (Note 8) L=0.1mH

= +25°C

T

A

T

= +70°C

A

= +25°C

T

C

V

DSS

V

GSS

I

D

I

DM

I

S

I

AS

E

AS

-20 V

±10 V

-17.5

-14.0

A

-40

-80 A

-2.2 A

-23 A
28 mJ

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

= +25°C

T

Total Power Dissipation (Note 6)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

ADVANCE INFORMATION

A

TC = +25°C

(Note 6)
(Note 7) 136

P

R

R

T

J, TSTG

θJA

θJC

D

2.3
41

W

54

°C/W

3.0

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20 — — V
— — -1
— — ±100 nA

VGS = 0V, ID = -250µA

µA

V

= -16V, VGS = 0V

DS

VGS = 8V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

Static Drain-Source On-Resistance

V

GS(th

R

DS (ON)

Diode Forward Voltage VSD — -0.7 -1.2 V

-0.4 — -1.0 V
— 4.2 5.2
— 5.4 7.5
— 7 —

VDS = VGS, ID = -250µA

= -4.5V, ID = -15A

V

mΩ

GS

V

= -2.5V, ID = -10A

GS

V

= -1.8V, ID = -1A

GS

V

= 0V, IS = -10A

GS

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

C

oss

C

rss

R
Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)

Notes: 5. AEC-Q101 VGS maximum is ±8V

while R

6. R

is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R

θJA

is determined by the user’s board design.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L =0.1mH, T

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.

θJA

= +25°C

J

Q
Q

t

D(on

t

D(off

t

t

t

Q

iss

G

s

d

f

r

r

— 5404 —
—
—
—
—
—
—
—
—
—
—
—
—
—

728
612

3.8
64

140

8.5
17

9.1
19

146
104

61
44

V

—

pF

—
— Ω

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz
—
—
—

nC

V

DD

—
—
—
—

ns

V

GS

R

G

—
— ns
— nC

IF = -10A, di/dt = 100A/µs

IF = -10A, di/dt = 100A/µs

= -10V, VGS = 0V

= -10V, ID = -20A

= -4.5V, VDD = -10V,

= 1Ω, RG = 1Ω ID = -10A

is guaranteed by design

θJC

POWERDI is a registered trademark of Diodes Incorporated

DMP2006UFG

Document number: DS36802 Rev. 2 - 2

2 of 6

www.diodes.com

April 2014

© Diodes Incorporated

RAIN CUR

R

N

T

R

CUR

R

T

R

R

OUR

ON-R

R

R

OUR

CE ON-R

TANC

R

R

OUR

ON-R

R

D

R

N-SOUR

C

DMP2006UFG

30.0

V= -10V

28.0

26.0

24.0

22.0

(A)

20.0

18.0

E

16.0

V = -1.5V

GS

GS

V = -4.5V

GS

V = -2.5V

GS

V = -2.0V

GS

V = -1.3V

GS

14.0

12.0

10.0

8.0

D

I, D

6.0

V = -1.1V

4.0

GS

2.0

0.0
0 0.4 0.8 1.2 1.6 2

V , DRAIN -SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Char acteristics

ADVANCE INFORMATION

ADVANCE INFORMATION



0.008

0.01

V = -1.8V

GS

ESISTANCE ( )

0.006

CE

V = -2.5V

GS

V = -4.5V

GS

0.004

AIN-S

0.002

, D

30

V= -5.0V

DS

28

26
24
22

(A)

20

18

EN

16
14
12

AIN

D

I, D

10

8
6
4

T = 150 CA

T = 125 CA

T = 85CA

T = 25CA

T = -55CA

2
0

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristics

0.1



0.09

E ( )

0.08

0.07

ESIS

0.06

I = -15.0A

D

0.05

I= -10.0A

0.04

D

0.03

AIN-S

0.02

, D

0.01

DS(ON)

0

0 2 4 6 8 1012141618202224262830

I , DRAIN SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.



0.01

0.009

Drain Current and Gate Voltage

V = -4.5V

GS

0.008

0.007

ESISTANCE ( )

CE

0.006

0.005

0.004

T = 150CA

T = 125CA

T = 85CA

T = 25CA

T = -55CA

0.003

AIN-S

0.002

, D

0.001

DS(ON)

0

0 5 10 15 20 25 30

I , DRAIN SOURCE CURRENT (A)

D

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

POWERDI is a registered trademark of Diodes Incorporated

DMP2006UFG

Document number: DS36802 Rev. 2 - 2

3 of 6

www.diodes.com

DS(ON)

0

012345678910

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Transfer Characteristics

1.6

V = -4.5V

1.4

E

GS

I = -15A

D

1.2

AI

1

,

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

V = -2.5V

GS

I = -10A

D



April 2014

© Diodes Incorporated

R

R

OUR

CE ON-R

C

G

H

RESH

OLD

O

G

OUR

CE CUR

RENT

C

UNC

TION CAPACITANC

F

G

T

OUR

C

OLT

G

D

RAIN C

U

R

R

N

T

DMP2006UFG

0.01



1

E ( )

E (V)

0.008

-42.

V= 5V

GS

-10

I= A

ESISTAN

D

0.006

V = -4.5V

0.004

GS

I= A

-15

D

AIN-S

0.002

, D

DS(on)

0

-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature

ADVANCE INFORMATION

30



0.8

LTA

V

0.6

-I = 1mAD

-I = 250µA

D

0.4

ATE T

0.2

GS(TH)

V,

0

-50-25 0 25 50 75100125150
T , JUNCTION TEMPERATURE (°C)

J

Figure 8 Gate Threshold Variation vs. Ambient Temperature

100000

f = 1MHz

)

25

ADVANCE INFORMATION

(A)

20

E (p

10000

C

iss

15

T = 150CA

T = 125CA

-I , S

10

S

5

0

0 0.2 0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forwar d Voltage vs. Current

10

8

E (V)
A

V= -10V

6

E V

DS

I= -20A

D

4

E-S
A

2

GS

-V ,

0

0306090120150

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate-Charge Characteristics

POWERDI is a registered trademark of Diodes Incorporated

DMP2006UFG

Document number: DS36802 Rev. 2 - 2

T = 85CA

T = 25CA

T = -55CA

4 of 6

www.diodes.com

1000

, J

T

100

02468101214161820

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

oss

C

rss

Figure 10 Typical Junction Capacitance

100

R

DS(on)

Limited

10

(A)

E

1

D

0.1

-I ,

T = 150°C

J(max)

T = 25°C

A

V = 4.5V

GS

Single Pulse

DUT on 1 * MRP Board

0.01

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.01 0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

April 2014

© Diodes Incorporated

T

RAN

N

T T

HER

R

TAN

C

C

DMP2006UFG

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

SIE

D = 0.005

r(t),

Single Pulse

0.001

0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIMES (sec)

D = 0.9

R (t) = r(t) * R



JA JA

R = 138°C/W



JA

Duty Cycle, D = t1/ t2

Figure 13 Transient Thermal Resistance

ADVANCE INFORMATION

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

E

A

Pin 1 ID

E2

A3

A1

D

D2

L

14

85

b (8x)eZ (4x)

(4x)

b2

(4x)

L1

(3x)

POWERDI3333-8

Dim Min Max Typ

D 3.25 3.35 3.30

E 3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61

A 0.75 0.85 0.80
A1 0 0.05 0.02
A3

 

0.203

b 0.27 0.37 0.32
b2

 

0.20

L 0.35 0.45 0.40
L1

e

Z

 
 
 

0.39

0.65

0.515

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

X

G

Dimensions Value (in mm)

C 0.650
G 0.230

85

Y2

Y3

G1

14

Y1

Y

G1 0.420

Y 3.700
Y1 2.250
Y2 1.850
Y3 0.700

X 2.370
X2 0.420

X2

POWERDI is a registered trademark of Diodes Incorporated

DMP2006UFG

Document number: DS36802 Rev. 2 - 2

5 of 6

www.diodes.com

April 2014

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCE INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP2006UFG

POWERDI is a registered trademark of Diodes Incorporated

DMP2006UFG

Document number: DS36802 Rev. 2 - 2

6 of 6

www.diodes.com

April 2014

© Diodes Incorporated