Diodes DMP2004WK User Manual
K
p
n
M
Y
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Very Low Gate Threshold Voltage V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ESD PROTECTED
GS(th)
< 1V
SOT323
Top View
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
Drai
D
Gate
Gate
Protection
Diode
Equivalent Circuit
Source
GS
To
View
DMP2004W
Ordering Information (Note 4)
Part Number Case Packaging
DMP2004WK-7 SOT323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
PAB
Chengdu A/T Site
YM
PAB
Shanghai A/T Site
YM
PAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
DMP2004WK
Document number: DS30931 Rev. 6 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
K
Maximum Ratings (@T
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Thermal Characteristics (@T
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
NEW PRODUCT
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
= +25°C, unless otherwise specified.)
A
= +25°C, unless otherwise specified.)
A
V
DSS
V
GSS
I
DM
P
R
T
j, TSTG
DMP2004W
I
D
d
JA
-20 V
±8 V
-400 mA
-1.4 A
250 mW
500 °C/W
-55 to +150 °C
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
DSS
I
DSS
I
GSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V
R
DS(ON)
|Y
V
GS(th)
fs
SD
|
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
C
iss
C
oss
C
rss
DMP2004WK
Document number: DS30931 Rev. 6 - 2
-20
-0.5
0.7
1.1
1.7
200
-0.5
2 of 5
www.diodes.com
V
VGS = 0V, ID = -250µA
-1.0 µA
1.0
µA
-1.0 V
0.9
1.4
2.0
mS
-1.2 V
V
VGS = 4.5V, VDS = 0V
VDS = VGS, ID = -250A
V
Ω
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VDS =10V, ID = -0.2A
V
175 pF
30 pF
20 pF
V
f = 1.0MHz
= -20V, VGS = 0V
DS
= -4.5V, ID = -430mA
GS
= 0V, IS = -115mA
GS
= -16V, V
DS
= 0V
GS
September 2013
© Diodes Incorporated
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