Diodes DMP2004VK User Manual

K

Product Summary

I

max

D

V

(BR)DSS

R

0.9Ω @ V

DS(ON)

max

= -4.5V

GS

TA = 25°C

-530A

-20V

1.4Ω @ VGS = -2.5V

-440A

Description

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

Applications

• Battery Charging

• Power Management Functions

• DC-DC Converters

• Portable Power Adaptors

ESD PROTECTED

Top View

SOT563

DMP2004V

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual P-Channel MOSFET

• Low On-Resistance

• Very Low Gate Threshold Voltage V

GS(TH)

< 1V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.006 grams (approximate)

S

G

D

2

1

G

D

2

Bottom View

S

2

Top View

Internal Schematic

1

1

Ordering Information (Note 4)

Part Number Case Packaging

DMP2004VK-7 SOT563 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

PAB

YM

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015

Code U V W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP2004VK

Document number: DS30916 Rev. 6 - 2

www.diodes.com

PAB = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)

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August 2012

© Diodes Incorporated

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)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

T

Steady

State

Steady

State

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

= +25°C, unless otherwise specified.)

V
V

I

P

R

T

J, TSTG

DSS
GSS

I

D

I

D

DM

D

θJA

DMP2004V

-20 V
±8 V

-0.53

-0.44

-0.44

-0.35

A

A

-1.8 A

400 mW
312 °C/W

-65 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

I

DSS
DSS
GSS

-20

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

-1.0

μA

±1.0 μA

VGS = 0V, ID = -250μA

= -20V, VGS = 0V

V

DS

VGS = ±4.5V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

V

R

DS (ON)

|Y
V

GS(th

fs

SD

-0.5

⎯

0.7

⎯

1.1

1.7

200

|

-0.5

⎯ ⎯

⎯

-1.0 V

0.9

1.4

2.0

-1.2 V

VDS = VGS, ID = -250μA
V

Ω

VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA

mS

V
VGS = 0V, IS = 115mA

= -4.5V, ID = -430mA

GS

= -10V, ID = -0.2A

DS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

C

iss

C

oss

C

rss

⎯ ⎯
⎯ ⎯
⎯ ⎯

175 pF

30 pF
20 pF

V
f = 1.0MHz

= -16V, VGS = 0V

DS

DMP2004VK

Document number: DS30916 Rev. 6 - 2

2 of 5

www.diodes.com

August 2012

© Diodes Incorporated