Diodes DMP2004VK User Manual

Product Summary
I
max
D
V
(BR)DSS
R
0.9 @ V
DS(ON)
max
= -4.5V
GS
TA = 25°C
-530A
-20V
1.4 @ VGS = -2.5V
-440A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors
ESD PROTECTED
Top View
SOT563
DMP2004V
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Dual P-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(TH)
< 1V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
S
G
D
2
1
G
D
2
Bottom View
S
2
Top View
Internal Schematic
1
1
Ordering Information (Note 4)
Part Number Case Packaging
DMP2004VK-7 SOT563 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PAB
YM
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015
Code U V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMP2004VK
Document number: DS30916 Rev. 6 - 2
www.diodes.com
PAB = Marking Code YM = Date Code Marking Y = Year (ex: U = 2007) M = Month (ex: 9 = September)
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)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V Pulsed Drain Current (Note 6)
Thermal Characteristics (@T
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
T
Steady
State
Steady
State
= +25°C
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
= +25°C, unless otherwise specified.)
V V
I
P
R
T
J, TSTG
DSS GSS
I
D
I
D
DM
D
θJA
DMP2004V
-20 V ±8 V
-0.53
-0.44
-0.44
-0.35
A
A
-1.8 A
400 mW 312 °C/W
-65 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage
BV
I
I
DSS DSS GSS
-20
V
-1.0
μA
±1.0 μA
VGS = 0V, ID = -250μA
= -20V, VGS = 0V
V
DS
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage (Note 5)
V
R
DS (ON)
|Y V
GS(th
fs
SD
-0.5
0.7
1.1
1.7
200
|
-0.5
-1.0 V
0.9
1.4
2.0
-1.2 V
VDS = VGS, ID = -250μA V
Ω
VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA
mS
V VGS = 0V, IS = 115mA
= -4.5V, ID = -430mA
GS
= -10V, ID = -0.2A
DS
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
C
iss
C
oss
C
rss
⎯ ⎯ ⎯ ⎯
175 pF
30 pF 20 pF
V f = 1.0MHz
= -16V, VGS = 0V
DS
DMP2004VK
Document number: DS30916 Rev. 6 - 2
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RAIN CUR
REN
T
R
CUR
RENT
GATE THRESH
O
OLTAG
R
TATIC
RAIN
OUR
C
DMP2004V
(A)
(A)
AIN
-I , D
D
0
0
-V , DRAIN SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Characteristics
-I , D
D
-V , GATE SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
E (V)
LD V
GS(th)
-V ,
T , AMBIENT TEMPERATURE (°C)
A
Fig. 3 Gate Threshold Voltage vs. Ambient Temperature
E
Ω
-S
D
, S
ON-RESISTANCE ( )
DS(on)
Ω
ON-RESISTANCE ( )
DS(on)
R , STATIC DRAIN-SOURCE
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
Ω
ON-RESISTANCE ( )
DS(on)
R , STA T IC DRAIN-SOURCE
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 6 Static Drain-Source On-Resistance vs.
Drain-Source Current
10
DMP2004VK
Document number: DS30916 Rev. 6 - 2
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T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambien t T empe rature
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Reverse Drain Current vs. Source-Drain Voltage
DS
DMP2004V
-I , DRAIN-CURRENT (A)
Fig. 9 Forward Transfer Admittance vs. Drain-Current
D
Package Outline Dimensions
DMP2004VK
Document number: DS30916 Rev. 6 - 2
K
A
D
G
H
-V , DRAIN-SOURCE VOLTAGE (V)
DS
B
C
M
L
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Dim Min Max Typ
A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20
M 0.10 0.18 0.11
All Dimensions in mm
Fig. 10 Typica l C apacitance
SOT563
August 2012
© Diodes Incorporated
DMP2004V
Suggested Pad Layout
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
G
Z
Y
X
C2
C2
C1
IMPORTANT NOTICE
LIFE SUPPORT
Dimensions Value (in mm)
Z 2.2 G 1.2 X 0.375 Y 0.5
C1 1.7 C2 0.5
DMP2004VK
Document number: DS30916 Rev. 6 - 2
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August 2012
© Diodes Incorporated
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