Diodes DMP2004TK User Manual
K
p
n
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
ESD PROTECTED
SOD523
Top View
Mechanical Data
• Case: SOT523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Drai
Gate
Gate
Protection
Diode
Equivalent Circuit To
Source
G
D
View
DMP2004T
S
Ordering Information (Note 4)
Part Number Case Packaging
DMP2004TK-7 SOT523 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code T U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
PAB
YM
PAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
DMP2004TK
Document number: DS30932 Rev. 5 - 2
1 of 5
www.diodes.com
August 2012
© Diodes Incorporated
K
θ
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
T
Drain Current (Note 5) Steady
State
= +25°C
A
T
= +85°C
A
Pulsed Drain Current (Note 6)
V
DSS
V
GSS
I
D
I
DM
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
P
R
T
J, TSTG
D
JA
DMP2004T
-20 V
±8 V
-430
-310
-750 mA
150 mW
833 °C/W
-55 to +150 °C
mA
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
DSS
I
⎯ ⎯
DSS
I
⎯ ⎯
GSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
V
GS(th
R
DS (ON)
|Y
V
SD
|
fs
⎯
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width ≤10μS, Duty Cycle ≤1%
7. Short duration pulse test used to minimize self-heating effect.
C
iss
C
oss
C
rss
-20
-0.5
200
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
⎯ ⎯
-1.0
±1.0 μA
⎯
0.7
1.1
1.7
-1.0 V
1.1
1.6
2.4
⎯ ⎯
-1.4 V V
175 pF
V
V
GS
μA
V
DS
VGS = ±4.5V, VDS = 0V
VDS = VGS, ID = -250μA
V
GS
Ω
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
ms
V
DS
GS
V
30 pF
20 pF
DS
f = 1.0MHz
= 0V, ID = -250μA
= -20V, V
GS
= 0V
= -4.5V, ID = -430mA
=10V, ID = 0.2A
= 0V, IS = -115mA
= -16V, V
GS
= 0V
DMP2004TK
Document number: DS30932 Rev. 5 - 2
2 of 5
www.diodes.com
August 2012
© Diodes Incorporated
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