Diodes DMP2004K User Manual

K

)

DMP2004

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

D

TA = +25°C

-430mA

-150mA

V

R

(BR)DSS

-20V

Package

DS(ON) max

0.9Ω @ V

2.0Ω @ VGS = -1.8V

= -4.5V

GS

SOT23

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power Management Functions

ESD PROTECTED

SOT23

Top View

Features

• Low On-Resistance

• Very Low Gate Threshold Voltage V

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• ESD Protected Gate

• Qualified to AEC-Q101 standards for High Reliability

GS(TH)

<1V

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding

• Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – Matte Tin annealed over Copper leadframe.

• Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

D

G

Top View

Internal Schematic

S

Gate

Gate
Protection
Diode

Equivalent Circuit

e3

Drain

Source

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMP2004K-7 Commercial SOT23 3,000/Tape & Reel

DMP2004KQ-7 Automotive SOT23 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2008 2009 2010 2011 2012 2013 2014 2015

Code V W X Y Z A B C

PAB

YW

DMP2004K

Document number: DS30933 Rev. 7 - 2

PAB = Product Type Marking Code
YW = Date Code Marking
Y = Year (ex: W = 2009)
W = Week (ex: A ~ Z = Weeks 1 ~ 26
a ~ y = Weeks 27 ~ 51

z = Weeks 52 and 53

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© Diodes Incorporated

July 2012

K

)

r

DMP2004

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

V

DSS

V

GSS

Continuous Drain Current (Note 5) VGS = -4.5V ID
Pulsed Drain Current

I

DM

-20 V
±8 V

-600 mA

-1.9 A

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

P

R

T

J, TSTG

JA

D

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-20 — — V
— — -1 µ
— — ±1.0 µA

A

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

V

GS(th

-0.5 — -1.0 V
— 0.7 0.9

Static Drain-Source On-Resistance

R

DS (ON)

— 1.1 1.4



— 1,7 2.0

Forward Transfer Admittance
Diode Forward Voltage (Note 6)

|Y

fs

V

SD

200 — — mS

|

-0.5 — -1.2 V

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

C
C
C

t

D(on)

t

D(off)

iss
oss
rss

t

t

f

DMP2004K

Document number: DS30933 Rev. 7 - 2

— — 175 pF
— — 30 pF
— — 20 pF
— 8.5 — ns
— 4.3 — ns
— 20.2 — ns
— 19.2 — ns

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550 mW
227 °C/W

-55 to +150 °C

VGS = 0V, ID = -250µA
V

= -20V, VGS = 0V

DS

VGS = ±4.5V, VDS = 0V

VDS = VGS, ID = -250µA
V

= -4.5V, ID = -430mA

GS

= -2.5V, ID = -300mA

V

GS

= -1.8V, ID = -150mA

V

GS

V

= -10V, ID = -0.2A

DS

VGS = 0V, IS = -115mA

= -16V, VGS = 0V

V

DS

f = 1.0MHz

= -3V, VGS = -2.5V,

V

DD

= 300, RG = 25,

R

L

I

= -100mA

D

July 2012

© Diodes Incorporated