Diodes DMP2004DWK User Manual

Product Summary

I

V

(BR)DSS

20V

R

0.55Ω @ V

DS(on) max

= 4.5V

GS

D

TA = +25°C

540mA

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 Load Switch

ESD PROTECTED

SOT363

Top View

DMP2004DWK

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual P-Channel MOSFET
 Low On-Resistance
 Low Gate Threshold Voltage V

GS(TH)

<1V

 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals Connections: See Diagram
 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

S

G

D

2

S

2

Top View

Internal Schematic

1

1

G

D

1

2

Ordering Information (Note 3)

Part Number Case Packaging

DMP2004DWK-7 SOT363 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

PAB Y M

PAB YM

PAB YM

PAB Y M

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016

Code U V W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

PAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

DMP2004DWK

Document number: DS30940 Rev. 6 - 2

1 of 5

www.diodes.com

January 2014

© Diodes Incorporated

)

R

CUR

R

T

R

CUR

R

T

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 4)

Thermal Characteristics (@T

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

V

DSS

V

GSS

= +25C

T

A

= +85C

T

A

= +25°C, unless otherwise specified.)

A

I

D

Characteristic Symbol Value Units

P

D

R

θJA

T

J, TSTG

= +25°C, unless otherwise specified.)

A

BV

DSS

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

C

 

iss

C

 

oss

C

 

rss

-20

 
 

-0.5



200

-0.5

 

-1.0 μA

1.0



0.7

1.1

1.7

-1.0 V

0.9

1.4

2.0

 


-1.2 V

175 pF

30 pF
20 pF

V

μA

Ω

ms

DMP2004DWK

-20 V
±8 V

-430

-310

250 mW
500 °C/W

-65 to +150 °C

VGS = 0V, ID = -250μA
V

= -20V, VGS = 0V

DS

VGS = 4.5V, VDS = 0V

VDS = VGS, ID = -250A

= -4.5V, ID = -430mA

V

GS

V

= -2.5V, ID = -300mA

GS

VGS = -1.8V, ID = -150mA
VDS = 10V, ID = 0.2A
V

= 0V, IS = 115mA

GS

= -16V, VGS = 0V

V

DS

f = 1.0MHz

mA

(A)

EN

AIN

D

-I , D

0

0

-V , DRAIN SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

(A)

EN

AIN

D

-I , D

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteri stics

DMP2004DWK

Document number: DS30940 Rev. 6 - 2

2 of 5

www.diodes.com

January 2014

© Diodes Incorporated