Diodes DMP2004DWK User Manual

Product Summary

I

V

(BR)DSS

20V

R

0.55Ω @ V

DS(on) max

= 4.5V

GS

D

TA = +25°C

540mA

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

Applications

 Load Switch

ESD PROTECTED

SOT363

Top View

DMP2004DWK

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual P-Channel MOSFET
 Low On-Resistance
 Low Gate Threshold Voltage V

GS(TH)

<1V

 Low Input Capacitance
 Fast Switching Speed
 Low Input/Output Leakage
 ESD Protected

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals Connections: See Diagram
 Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.006 grams (approximate)

S

G

D

2

S

2

Top View

Internal Schematic

1

1

G

D

1

2

Ordering Information (Note 3)

Part Number Case Packaging

DMP2004DWK-7 SOT363 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

PAB Y M

PAB YM

PAB YM

PAB Y M

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016

Code U V W X Y Z A B C D

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

PAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

DMP2004DWK

Document number: DS30940 Rev. 6 - 2

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)

R

CUR

R

T

R

CUR

R

T

Maximum Ratings (@T

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 4)

Thermal Characteristics (@T

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics (@T

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Notes: 4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

5. Short duration pulse test used to minimize self-heating effect.

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

V

DSS

V

GSS

= +25C

T

A

= +85C

T

A

= +25°C, unless otherwise specified.)

A

I

D

Characteristic Symbol Value Units

P

D

R

θJA

T

J, TSTG

= +25°C, unless otherwise specified.)

A

BV

DSS

I

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

C

 

iss

C

 

oss

C

 

rss

-20

 
 

-0.5



200

-0.5

 

-1.0 μA

1.0



0.7

1.1

1.7

-1.0 V

0.9

1.4

2.0

 


-1.2 V

175 pF

30 pF
20 pF

V

μA

Ω

ms

DMP2004DWK

-20 V
±8 V

-430

-310

250 mW
500 °C/W

-65 to +150 °C

VGS = 0V, ID = -250μA
V

= -20V, VGS = 0V

DS

VGS = 4.5V, VDS = 0V

VDS = VGS, ID = -250A

= -4.5V, ID = -430mA

V

GS

V

= -2.5V, ID = -300mA

GS

VGS = -1.8V, ID = -150mA
VDS = 10V, ID = 0.2A
V

= 0V, IS = 115mA

GS

= -16V, VGS = 0V

V

DS

f = 1.0MHz

mA

(A)

EN

AIN

D

-I , D

0

0

-V , DRAIN SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristics

(A)

EN

AIN

D

-I , D

-V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteri stics

DMP2004DWK

Document number: DS30940 Rev. 6 - 2

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G

R

O

O

G

DMP2004DWK

1.0

0.9

E (V)

0.8

LTA

0.7

0.6

LD V

0.5

ESH

0.4

0.3

ATE TH

0.2

GS(th)

0.1

-V ,

0

0255075-50

-25

T , AMBIENT TEMPERATURE (°C)

A

Fig. 3 Gate Threshold Voltage vs.

Ambient Temperature

100 125

150

0.01 0.1

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 4 Static Drain-Source On-Resistance vs.

Drain Current

1

10

10

-I , DRAIN-SOURCE CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance vs. Drain Current

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

-50 50 150

D

-25 0

T , AMBIENT TEMPERATURE (°C)

Fig. 7 Static Drain-Source On-State Resistance

25 75

A

vs. Ambient Temperature

100 125

-I , DRAIN-SOURCE CURRENT (A)

D

Fig. 6 Static Drain-Source On-Resistance vs.

Drain-Source Current vs. Gate Source Voltage

DMP2004DWK

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-I , DRAIN CURRENT (A)

Fig. 9 Forward Transfer Admittance vs. Drain Current

D

Package Outline Dimensions

K

J

A

B C

H

M

D

L

F

Suggested Pad Layout

G

Z

Y

X

C2

C2

C1

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Capacitance

Dim Min Max Typ

Dimensions Value (in mm)

SOT363

A 0.10 0.30 0.25
B 1.15 1.35 1.30
C 2.00 2.20 2.10
D 0.65 Typ
F 0.40 0.45 0.425
H 1.80 2.20 2.15
J 0 0.10 0.05
K 0.90 1.00 1.00
L 0.25 0.40 0.30
M 0.10 0.22 0.11

0° 8° -



All Dimensions in mm

Z 2.5
G 1.3
X 0.42

Y 0.6
C1 1.9
C2 0.65

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

DMP2004DWK

DMP2004DWK

Document number: DS30940 Rev. 6 - 2

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January 2014

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