Diodes DMP2004DMK User Manual
K
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Dual P-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
ESD PROTECTED
GS(th)
< 1V
SOT26
Top View
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
D
2
S
2
Top View
Internal Schematic
DMP2004DM
S
G
G
1
1
D
1
2
Ordering Information (Note 4)
Part Number Case Packaging
DMP2004DMK-7 SOT26 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
D
2
PAB YM
S
2
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMP2004DMK
Document number: DS30939 Rev. 4 - 2
S
G
1
1
PAB = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
G
D
2
1
1 of 5
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August 2012
© Diodes Incorporated
K
θ
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
V
DSS
V
GSS
I
D
I
DM
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
NEW PRODUCT
Operating and Storage Temperature Range
P
R
T
J, TSTG
D
JA
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
IDSS
I
GSS
DSS
-20
⎯ ⎯
⎯ ⎯
⎯ ⎯
-1.0
±1.0 μA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V
GS(th
R
DS (ON)
|Y
V
SD
-0.5
⎯
0.7
⎯
1.1
1.7
|
fs
200
-0.5
⎯ ⎯
⎯
-1.0 V
0.9
1.4
2.0
-1.2 V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes: 5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
C
⎯ ⎯
iss
C
⎯ ⎯
oss
C
⎯ ⎯
rss
175 pF
30 pF
20 pF
DMP2004DM
-20 V
±8 V
-550 mA
-1.9 A
500 mW
250 °C/W
-55 to +150 °C
V
VGS = 0V, ID = -250μA
μA
mS
VDS = -20V, VGS = 0V
V
= ±4.5V, VDS = 0V
GS
V
= VGS, ID = -250μA
DS
V
= -4.5V, ID = -430mA
GS
Ω
V
= -2.5V, ID = -300mA
GS
VGS = -1.8V, ID = -150mA
VDS =10V, ID = -0.2A
VGS = 0V, IS = 115mA
= -16V, VGS = 0V
V
DS
f = 1.0MHz
DMP2004DMK
Document number: DS30939 Rev. 4 - 2
2 of 5
www.diodes.com
August 2012
© Diodes Incorporated
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