Diodes DMP1245UFCL User Manual

f

n

Summary

V

R

(BR)DSS

29mΩ @V

-12V

45mΩ @V 60mΩ @V

100mΩ @V

max I

DS(on)

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

= -1.5V

GS

Application

This device provides a high performance, low R MOSFETs in the thermally and space efficient X1-DFN1616-6 package. The low R losses are kept making it ideal for use as a:

• Battery disconnect switch

• Load switch for power management functions

ADVANCE INFORMATION

of this MOSFET ensures conduction

DS(ON)

Top View

max

D

-6.6 A

-5.3 A

-4.6 A

-3.5 A

P channel

DS(ON)

X1-DFN1616-6

Type E

A Product Line o

Diodes Incorporated

DMP1245UFCL

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Typical off board profile of 0.5mm - ideally suited for thin applications

• Low R

• PCB footprint of 2.56mm

• 3kV ESD Protected Gate – protected against human borne

ESD

• “Lead-Free”, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

– minimizes conduction losses

DS(ON)

2

Mechanical Data

• Case: X1-DFN1616-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Lead Free Plating (NiPdAu Finish over Copper leadframe).

• Terminals: Solderable per MIL-STD-202, Method 208

• Weight: 0.04 grams (approximate)

Drai

Pin 1

Gate

Gate Protection Diode

Device symbol Bottom View

Source

Top View

Pin-Out

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP1245UFCL-7 P5 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P5

YM

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

P5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September)

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Diodes Incorporated

DMP1245UFCL

A Product Line o

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) @TA = 25°C @T

= 70°C

A

V

DSS

V

GSS

I

D

Pulsed Drain Current TP = 10μs IDM

-12 V ±8 V

-6.6

-5.25

A

-16.67 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state

ADVANCE INFORMATION

condition.

5. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady state condition.

(Note 4) (Note 5) 1.7 W (Note 4) (Note 5) 74

P

R

T

J, TSTG

D

JA

θ

613 mW

204

°C/W

-55 to +150 °C

Thermal Characteristics

100

90 80 70 60 50 40 30 20

P(pk), PEAK TRANSIENT POWER (W)

10

0

0.0001 0.001 0.01 0.1 1 10 100 1000 t , PULSE DURA TION TIME (sec)

1

Fig. 1 Single Pulse Maximum Power Dissipation

Single Pulse R =205°C/W

θ

JA

R(t)=R*r(t)

θθ

JA JA

T-T=P*R (t)

θ

JA JA

100

D

I , DRAIN CURRENT (A)

10

0.1

R

DS(ON)

Limited

I

D

(

A

)

@

I (A) @ DC

1

T = 150 C T= 25C Single Pulse

0.01

D

I (A) @P =10s

DW

I(A) @P =1s

DW

I (A) @P =100ms

DW

I (A) @P =10ms

J(MAX) A

°

DW

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 2 SOA, Safe Operat ion Area

I(A) @

D

P =10µs

W

I

D

(

A

)

@

P

W

=

1

m

P

W

s

=

1

0

µ

s

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

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)

g

)

r

)

Diodes Incorporated

DMP1245UFCL

1

0.1

0.01

A Product Line o

r(t), TRANSIENT THERMAL RESISTANCE

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

ADVANCE INFORMATION

t1, PULSE DURATION TIMES (sec)

R(t)=r(t) * R

θθ

JA JA

R = 205°C/W

θ

JA

Duty Cycle, D=t1/ t2

Fig. 03 Transient Thermal Resist ance

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

I

DSS DSS GSS

-12

⎯ ⎯ ⎯ ⎯ ⎯ ⎯

V

-1 µA

±10

µA

VGS = 0V, ID = -250µA VDS = -12.0V, VGS = 0V V

= ±8.0V, VDS = 0V

GS

ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

-0.3 -0.6 -0.95 V

⎯ ⎯ ⎯ ⎯

0.4 3 - S

|

- - -1.0 V

25 29

31 45

40 60

60 100

VDS = VGS, ID = -250µA V

= -4.5V, ID = - 4A

GS

= -2.5V, ID = - 3.5A

V

m

GS

= -1.8V, ID = - 1A

V

GS

= -1.5 V, ID = - 0.5A

V

GS

VDS = -5V, ID = -2A

VGS = 0V, ID = -2A DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

Total Gate Charge Gate-Source Charge

Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

C C

t

C

oss rss

R Q

Q Q

D(on

t

D(off

t

iss

g

s d

f

- 1357.4 -

- 499 -

- 273.6 -

- 14.26 -

- 16.1 -

- 26.1 - nC

- 1.71 -

- 20.48 -

- 15.2 -

- 33.11 -

- 219.4 -

- 217.64 -

pF pF pF



nC

= -10V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

= -4.5V

V

GS

= -8V

V

GS

nC

ns ns

V

= -2.5V, VDS = -10V

GS

ns

= -180mA, RG = 2.0,

I

D

ns

I

= -1A,

D

V

DS

= -10V

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

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RAIN CUR

R

N

T

R

CUR

RENT

R

RAIN-SOUR

CE O

N-R

TAN

C

R

OUR

C

ON-R

TANC

Diodes Incorporated

DMP1245UFCL

A Product Line o

20

V = 1.8V

V = 2.0V

GS

16

(A) E

12

V = 2.5V

GS

V = 4.5V

GS

V = 1.5V

GS

8

V = 1.2V

GS

-I , D

D

V = 8.0V

4

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

GS

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 4 Typical Output Ch aracteristics

0.06

Ω

ADVANCE INFORMATION

0.05

V = -1.5V

GS

20

16

(A)

12

8

AIN

D

-I , D 4

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , GATE-SOURCE VOLT AGE (V)

GS

Fig. 5 Typical Transfer Characteristic

0.06

Ω

V = 4.5V

E ( )

GS

V = -1.8V

0.04

0.03

V = -4.5V

GS

V = -2.5V

GS

V = -3.5V

GS

0.02

0.01

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

048121620

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 6 Typical On-Resistance

vs. Drain C urrent and G ate V ol tage

1.7

E

1.5

ESIS

V = -2.5V

GS

I = -5A

D

1.3

E

1.1

(NORMALIZED)

0.9

AIN-S

V = -4.5V

GS

I = -10A

D

, D

0.7

DSON

0.5

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 8 On-Resistance Variation with Temperature

T = 150°C

ESIS

0.04

0.02

T = 85°C

A

T = 125°C

A

T = 25°C

A

T = -55°C

A

, D

DS(ON)

0

048121620

I , DRAIN CURRENT (A)

D

Fig. 7 Typical On-Resistance

vs. Drain C urrent and Temperature

0.06

Ω

0.05

V = -2.5V

GS

I = -5A

D

0.04

0.03

V = -4.5V

GS

I = -10A

D

0.02

0.01

DSON

R , DRAIN-SOURCE ON-RESISTANCE ( )

0

-50-250255075100125150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 9 On-Resistance Variation with Temperature

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

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GATE THRESH

O

TAG

OUR

CE CUR

RENT

GE CUR

RENT

Diodes Incorporated

DMP1245UFCL

A Product Line o

1.4

1.2

E (V)

L

1.0

LD V

0.8

0.6

I = -1mA

D

20

16

(A)

12

T = 25°C

A

8

0.4

S

I, S

I = -250µA

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

D

Fig. 10 Gate Threshold Variation vs. Ambient T emperature

100,000

T = 150°C

ADVANCE INFORMATION

10,000

A

T = 125°C

A

4

0

0.4 0.6 0.8 1 1.2 V , SOURCE-DRAIN VOLTAG E (V)

SD

Fig. 11 Diode Forw a r d Voltage vs. Curr ent

2,500

2,000

(nA)

C

1,000

T = 85°C

A

1,500

ISS

100

10

DSS

I, LEAKA

1

024 681012

V , DRAIN- SOURCE VOLTAG E (V)

DS

Fig. 12 Typical Drain-Source Leakage Current vs. Voltage

8

6

V = -10V

DS

I = -1A

D

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

T = 25°C

A

1,000

500

T

C , JUNCTION CAPACIT ANCE (pF)

0

048121620

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 13 Typical Junction Capacitance

C

OSS

C

RSS

0

0 5 10 15 20 25 30

Q , TOTAL GA T E CHARGE (nC)

g

Fig. 14 Gate-Charge Characteristics

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

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Package Outline Dimensions

ADVANCE INFORMATION

E

A

E2

Z(4X)

Suggested Pad Layout

Y2

X (6x)

D2

X2

A Product Line o

Diodes Incorporated

DMP1245UFCL

X1-DFN1616-6

Type E

Dim Min Max Typ

A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 — — 0.13

b 0.20 0.30 0.25

b1 0.10 0.30 0.20

D 1.55 1.65 1.60 D2 0.57 0.77 0.67

E 1.55 1.65 1.60 E2 1.30 1.50 1.40

e — — 0.50

L 0.25 0.35 0.30

L1 0.52 0.72 0.62

Z — — 0.175

All Dimensions in mm

Value

(in mm)

C 0.500

X 0.300 X1 0.200 X2 0.720 X3 0.400

Y 0.475 Y1 0.620 Y2 1.900

D

e

X3

X1

A1

b1

L1

L(2X)

b(6X)

Y (2x)

A3

Dimensions

Y1

C

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCE INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

Diodes Incorporated

DMP1245UFCL

A Product Line o

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

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