Diodes DMP1245UFCL User Manual

f

n

Summary

V

R

(BR)DSS

29mΩ @V

-12V

45mΩ @V
60mΩ @V

100mΩ @V

max I

DS(on)

= -4.5V

GS

= -2.5V

GS

= -1.8V

GS

= -1.5V

GS

Application

This device provides a high performance, low R
MOSFETs in the thermally and space efficient X1-DFN1616-6
package. The low R
losses are kept making it ideal for use as a:

• Battery disconnect switch

• Load switch for power management functions

ADVANCE INFORMATION

of this MOSFET ensures conduction

DS(ON)

Top View

max

D

-6.6 A

-5.3 A

-4.6 A

-3.5 A

P channel

DS(ON)

X1-DFN1616-6

Type E

A Product Line o

Diodes Incorporated

DMP1245UFCL

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Typical off board profile of 0.5mm - ideally suited for thin
applications

• Low R

• PCB footprint of 2.56mm

• 3kV ESD Protected Gate – protected against human borne

ESD

• “Lead-Free”, RoHS Compliant (Note 1)

• "Green" Device (Note 2)

– minimizes conduction losses

DS(ON)

2

Mechanical Data

• Case: X1-DFN1616-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Lead Free Plating (NiPdAu Finish over Copper leadframe).

• Terminals: Solderable per MIL-STD-202, Method 208

• Weight: 0.04 grams (approximate)

Drai

Pin 1

Gate

Gate
Protection
Diode

Device symbol Bottom View

Source

Top View

Pin-Out

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP1245UFCL-7 P5 7 8 3,000

Notes: 1. No purposefully added lead.

2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

P5

YM

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

P5 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

1 of 7

www.diodes.com

November 2011

© Diodes Incorporated

f

Diodes Incorporated

DMP1245UFCL

A Product Line o

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) @TA = 25°C
@T

= 70°C

A

V

DSS

V

GSS

I

D

Pulsed Drain Current TP = 10μs IDM

-12 V
±8 V

-6.6

-5.25

A

-16.67 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 4. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state

ADVANCE INFORMATION

condition.

5. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady state condition.

(Note 4)
(Note 5) 1.7 W
(Note 4)
(Note 5) 74

P

R

T

J, TSTG

D

JA

θ

613 mW

204

°C/W

-55 to +150 °C

Thermal Characteristics

100

90
80
70
60
50
40
30
20

P(pk), PEAK TRANSIENT POWER (W)

10

0

0.0001 0.001 0.01 0.1 1 10 100 1000
t , PULSE DURA TION TIME (sec)

1

Fig. 1 Single Pulse Maximum Power Dissipation

Single Pulse
R =205°C/W

θ

JA

R(t)=R*r(t)

θθ

JA JA

T-T=P*R (t)

θ

JA JA

100

D

I , DRAIN CURRENT (A)

10

0.1

R

DS(ON)

Limited

I

D

(

A

)

@

I (A) @ DC

1

T = 150 C
T= 25C
Single Pulse

0.01

D

I (A) @P =10s

DW

I(A) @P =1s

DW

I (A) @P =100ms

DW

I (A) @P =10ms

J(MAX)
A

°

°

DW

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 2 SOA, Safe Operat ion Area

I(A) @

D

P =10µs

W

I

D

(

A

)

@

P

W

=

1

m

P

W

s

=

1

0

0

µ

s

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

2 of 7

www.diodes.com

November 2011

© Diodes Incorporated

f

)

g

g

g

)

r

)

Diodes Incorporated

DMP1245UFCL

1

0.1

0.01

A Product Line o

r(t), TRANSIENT THERMAL RESISTANCE

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

ADVANCE INFORMATION

t1, PULSE DURATION TIMES (sec)

R(t)=r(t) * R

θθ

JA JA

R = 205°C/W

θ

JA

Duty Cycle, D=t1/ t2

Fig. 03 Transient Thermal Resist ance

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

-12

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

-1 µA

±10

µA

VGS = 0V, ID = -250µA
VDS = -12.0V, VGS = 0V
V

= ±8.0V, VDS = 0V

GS

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y

V

fs

SD

-0.3 -0.6 -0.95 V

⎯
⎯
⎯
⎯

0.4 3 - S

|

- - -1.0 V

25 29

31 45

40 60

60 100

VDS = VGS, ID = -250µA
V

= -4.5V, ID = - 4A

GS

= -2.5V, ID = - 3.5A

V

m

GS

= -1.8V, ID = - 1A

V

GS

= -1.5 V, ID = - 0.5A

V

GS

VDS = -5V, ID = -2A

VGS = 0V, ID = -2A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

Total Gate Charge
Gate-Source Charge

Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

C
C

t

t

C

oss
rss

R
Q

Q
Q

D(on

t

D(off

t

iss

g

s
d

f

- 1357.4 -

- 499 -

- 273.6 -

- 14.26 -

- 16.1 -

- 26.1 - nC

- 1.71 -

- 20.48 -

- 15.2 -

- 33.11 -

- 219.4 -

- 217.64 -

pF
pF
pF



nC

nC

= -10V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

= -4.5V

V

GS

= -8V

V

GS

nC

ns
ns

V

= -2.5V, VDS = -10V

GS

ns

= -180mA, RG = 2.0,

I

D

ns

I

= -1A,

D

V

DS

= -10V

DMP1245UFCL

Document number: DS35505 Rev. 1 - 2

3 of 7

www.diodes.com

November 2011

© Diodes Incorporated