Diodes DMP10H400SK3 User Manual

K

NEW PRODUCT

100V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

V

(BR)DSS

-100V

R

DS(on) max

240mΩ @ V

300mΩ @ VGS = -4.5V

= -10V

GS

D

TC = +25°C

-9A

-8A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

 DC-DC Converters
 Power management functions
 Analog Switch

TO252

Top View

Features

 Low On-Resistance
 Low Input Capacitance
 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: TO252 (DPAK)
 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish – Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.33 grams (approximate)

D

D

GS

Top View

Internal Schematic

DMP10H400SK3

Ordering Information

Part Number Compliance Case Packaging

DMP10H400SK3-13 Standard TO252 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

(Note 4)

Marking Information

DMP10H400SK3

Document number: DS35932 Rev. 4 - 2

P400S

YYWW

1 of 6

www.diodes.com

= Manufacturer’s Marking
P400SK = Product Type Marking Code

.

YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)

December 2013

© Diodes Incorporated

)

g

g

)

r

)

r

r

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = -10V

Maximum Body Diode Forward Current (Note 4)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Case (Note 4)
Operating and Storage Temperature Range

Steady

State

T

= +25°C

C

TC = +100°C

= +25°C

T

C

TC = +100°C

V
V

I

P

R
R

T

J, TSTG

DSS

GSS

I

D

I

S

DM

D

θJA

θJC

DMP10H400SK3

-100 V
±20 V

-9

-5.5

A

-4 A

-15 A

42
17
44

3

W

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

-100

 
 
 

V

VGS = 0V, ID = -250µA

-1 µA

±100 nA

VDS = -80V, VGS = 0V
VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD

-1








190 240
210 300

-3 V

mΩ

-0.7 -1.2 V

VDS = VGS, ID = -250µA

= -10V, ID = -5A

V

GS

VGS = -4.5V, ID =-5A
VGS = 0V, IS = -5A

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = -4.5V) Qg
Total Gate Charge (VGS = -10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

5. Short duration pulse test used to minimize self-heating effect

6. Guaranteed by design; not subject to production testing

t

t

Q
Q

D(on

D(off

t

Q

s

d

t

t

f

r

r




















1239

42

28

13

8.4

17.5

2.8

3.2

9.1

14.9

57.4

34.4

25.2

24.5




















pF

Ω

nC

ns

ns
nC

= -25V, VGS = 0V, f = 1MHz

V

DS

VDS = 0V, VGS = 0V, f = 1MHz

V

= -60V, ID = -5A

DS

V

= -50V, RG = 9.1Ω, ID = -5A

DD

VGS = 0V, IS = -5A, dI/dt = 100A/μs
VGS = 0V, IS = -5A, dI/dt = 100A/μs

DMP10H400SK3

Document number: DS35932 Rev. 4 - 2

2 of 6

www.diodes.com

December 2013

© Diodes Incorporated