Diodes DMP1096UCB4 User Manual

Page 1
Product Summary
I
V
R
(BR)DSS
-12V
102m @ V 116m @ VGS = -2.5V
DS(ON)
GS
= -4.5V
D
TA = +25°C
-2.6A
-2.4A
Description
This new generation MOSFET has been designed to minimize the on­state resistance (R performance, making it ideal for high efficiency power management applications.
) and yet maintain superior switching
DS(on)
Applications
• Battery Management
• Load Switch
• Battery Protection
ESD PROTECTED TO 3kV
U-WLB1010-4
DMP1096UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low Qg & Qgd
• Small Footprint
• Low Profile 0.62mm height
• ESD Protected Up To 3KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-WLB1010-4
• Terminal Connections: See Diagram Below
• Weight: 0.005 grams (approximate)
D
G
Top View
Equivalent Circuit
D
S
Ordering Information (Note 3)
Part Number Case Packaging
DMP1096UCB4-7 U-WLB1010-4 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017 2018
Code X Y Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
1W
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
1W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010)
YM
M = Month (ex: 9 = September)
BW
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BW = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010)
YM
M = Month (ex: 9 = September)
December 2012
© Diodes Incorporated
Page 2
)
g
g
g
g
(th)
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @T Operating and Storage Temperature Range
T
Steady
State
Steady
State
= +25°C (Note 5) R
A
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
DMP1096UCB4
V
DSS
V
GSS
I
D
I
D
I
DM
P
D
JA
, T
T
J
STG
-12 V
-5 V
-2.6
-2.1
-2.4
-1.9
A
A
-10 A
0.82 W 150 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage
BV BV
DSS
I
GSS
DSS GSS
-12 - - V
-6.0 - - V
- - -1
- - -500 nA ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
V
GS(th
-0.4 -0.6 -1.0 V
- 85 102 Static Drain-Source On-Resistance
R
DS (ON)
- 97 116
- 127 152 Forward Transfer Admittance Diode Forward Voltage
|
|Y
fs
V
SD
- 4 - S
-0.6 -1.0 V DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at Vth Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
iss
C
oss
C
rss
Q
Q
s
Q
d
Q t
D(on)
t
t
D(off)
t
f
- 251 -
- 359 -
- 70 -
- 3.7 -
- 0.4 -
- 0.6 -
- 0.2 -
-
-
-
-
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
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17.6
26.9
37.5
32.3
VGS = 0V, ID = -250A VDS = 0V, IG = -250A
μA
= -9.6V, VGS = 0V
V
DS
VGS = -5V, VDS = 0V
VDS = VGS, ID = -250A V
= -4.5V, ID = -500mA
mΩ
GS
= -2.5V, ID = -500mA
V
GS
= -1.5V, ID = -500mA
V
GS
VDS = -6V, ID = -500mA VGS = 0V, IS = -500mA
= -6V, VGS = 0V,
V
pF
nC
DS
f = 1.0MHz
= -4.5V, VDS = -6V,
V
GS
I
= -500mA
D
-
-
-
ns
= -6V, VGS = -2.5V,
V
DS
R
= 20, ID = -500mA
G
-
December 2012
© Diodes Incorporated
Page 3
R
CUR
RENT
RAIN CUR
REN
T
R
RAIN-SOUR
CE O
N-R
TAN
C
R
RAIN-SOUR
CE O
N-R
TAN
C
DMP1096UCB4
5.0
V = -4.5V
GS
4.0
(A)
3.0
2.0
AIN
D
-I , D
1.0
0
0 0.3 0.6 0.9 1.2 1.5
-V , DRAIN-SOURCE VOLTAGE (V)
DS
V = -3.0V
GS
V = -2.5V
GS
V = -2.0V
GS
V = -1.5V
GS
V = -1.2V
GS
Fig. 1 Typical Output Ch ar acteristic
0.20
Ω
E ( )
0.18
5
V = -5V
4
DS
(A)
3
2
D
-I , D 1
0
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0 0.5 1.0 1.5 2.0 2.5
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristic
0.14
Ω
E ( )
V = -4.5V
GS
0.16
0.12
0.14
ESIS
0.12
V = -2.5V
0.10
0.08
GS
V = -4.5V
GS
0.06
ESIS
0.10
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0.08
0.04
, D
0.02
DS(ON)
0
012345678
-I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.6
, D
DS(ON)
0.06 0123 45
vs. Drain Current and Temperature
0.16
T = -55°C
A
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
DSON
R , DRAIN-SOURCE
0.14
0.12
V = -2.5V
GS
I = -0.5A
D
0.10
0.08
ON-RESISTANCE (NORMALIZED)
0.06
0.04
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = -4.5V
GS
I = -1.0A
D
Fig. 6 On-Resistance Variation with Temperature
1.4
V = -2.5V
GS
1.2
I = -0.5A
D
1.0
DSON
R , DRAIN-SOURCE
0.8
ON-RESISTANCE (NORMALIZED)
0.6
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
Fig. 5 On-Resistance Variation with Temperature
V = -4.5V
GS
I = -1.0A
D
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
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© Diodes Incorporated
Page 4
OUR
CE C
URRENT
C, CAPACITAN
C
F
GE CUR
REN
T
T
R
T
T
HER
R
T
C
DMP1096UCB4
1.2
1.0
5
4
(A)
0.8
T = 25°C
A
0.6
I = -1mA
D
3
2
I = -250µA
0.4
0.2
GS(TH)
-V , GATE THRESHOLD VOLTAGE (V) 0
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
10,000
)
1,000
E (p
D
S
-I , S 1
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
1,000
f = 1MHz
T = 150°C
100
A
(nA)
T = 125°C
A
10
C
iss
C
oss
1
T = 85°C
A
100
C
rss
DSS
-I , LEAKA
0.1
T = 25°C
A
10
02 4 681012
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Typical Total Capacitance
1
E
D = 0.7 D = 0.5
AN
D = 0.3
0.01 024681012
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
D = Single Pulse
0.001
0.00001 0.001 0.01 0.1 1 10 100 1,000
0.0001
D = 0.9
t , PULSE DURA TION TIME (s)
1
R (t) = r(t) *
θ
JA
R = 150°C/W
JA
P(pk)
t
1
t
2
T - T = P * R (t)
JA JA12θ
Duty Cycle, D = t /t
R
θθJA
Fig. 11 Transie nt Therma l Response
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
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Page 5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SD
E
A2
A
e
SE
U-WLB1010-4
Dim Min Max Typ
D 0.95 1.05 1.00 E 0.95 1.05 1.00 A
A2
b 0.25 0.35 0.30
e SD SE
All Dimensions in mm
D
4X-Ø b
e
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
ØD
C
C
Dimensions Value (in mm)
C 0.50 D 0.25
0.62
−
− −
− −
− −
− −
DMP1096UCB4
−
0.38
0.50
0.25
0.25
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMP1096UCB4
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
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