Diodes DMP1096UCB4 User Manual
Product Summary
I
V
R
(BR)DSS
-12V
102m @ V
116m @ VGS = -2.5V
DS(ON)
GS
= -4.5V
D
TA = +25°C
-2.6A
-2.4A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(on)
Applications
• Battery Management
• Load Switch
• Battery Protection
ESD PROTECTED TO 3kV
U-WLB1010-4
DMP1096UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low Qg & Qgd
• Small Footprint
• Low Profile 0.62mm height
• ESD Protected Up To 3KV
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: U-WLB1010-4
• Terminal Connections: See Diagram Below
• Weight: 0.005 grams (approximate)
D
G
Top View
Equivalent Circuit
D
S
Ordering Information (Note 3)
Part Number Case Packaging
DMP1096UCB4-7 U-WLB1010-4 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017 2018
Code X Y Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
1W
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
1W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
YM
M = Month (ex: 9 = September)
BW
1 of 6
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BW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
YM
M = Month (ex: 9 = September)
December 2012
© Diodes Incorporated
)
g
g
g
g
(th)
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range
T
Steady
State
Steady
State
= +25°C (Note 5) R
A
= +25°C
A
T
= +70°C
A
T
= +25°C
A
T
= +70°C
A
DMP1096UCB4
V
DSS
V
GSS
I
D
I
D
I
DM
P
D
JA
, T
T
J
STG
-12 V
-5 V
-2.6
-2.1
-2.4
-1.9
A
A
-10 A
0.82 W
150 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
BV
DSS
I
GSS
DSS
GSS
-12 - - V
-6.0 - - V
- - -1
- - -500 nA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th
-0.4 -0.6 -1.0 V
- 85 102
Static Drain-Source On-Resistance
R
DS (ON)
- 97 116
- 127 152
Forward Transfer Admittance
Diode Forward Voltage
|
|Y
fs
V
SD
- 4 - S
-0.6 -1.0 V
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
C
iss
C
oss
C
rss
Q
Q
s
Q
d
Q
t
D(on)
t
t
D(off)
t
f
- 251 -
- 359 -
- 70 -
- 3.7 -
- 0.4 -
- 0.6 -
- 0.2 -
-
-
-
-
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
2 of 6
www.diodes.com
17.6
26.9
37.5
32.3
VGS = 0V, ID = -250A
VDS = 0V, IG = -250A
μA
= -9.6V, VGS = 0V
V
DS
VGS = -5V, VDS = 0V
VDS = VGS, ID = -250A
V
= -4.5V, ID = -500mA
mΩ
GS
= -2.5V, ID = -500mA
V
GS
= -1.5V, ID = -500mA
V
GS
VDS = -6V, ID = -500mA
VGS = 0V, IS = -500mA
= -6V, VGS = 0V,
V
pF
nC
DS
f = 1.0MHz
= -4.5V, VDS = -6V,
V
GS
I
= -500mA
D
-
-
-
ns
= -6V, VGS = -2.5V,
V
DS
R
= 20, ID = -500mA
G
-
December 2012
© Diodes Incorporated
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