Diodes DMP1080UCB4 User Manual

Page 1
Product Summary
I
V
R
(BR)DSS
-12V
80m @ V 93m @ VGS = -2.5V
DS(ON)
GS
= -4.5V
D
TA = +25°C
-3.3A
-3.0A
Description
This new generation MOSFET has been designed to minimize the on­state resistance (R performance, making it ideal for high efficiency power management applications.
) and yet maintain superior switching
DS(on)
Applications
Battery Management
Load Switch
Battery Protection
ESD PROTECTED TO 3kV
U-WLB1010-4
DMP1080UCB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low Qg & Qgd
Small Footprint
Low Profile 0.62mm height
ESD Protected Up To -3KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-WLB1010-4
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (approximate)
D
G
Top View
Equivalent Circuit
D
S
Ordering Information (Note 4)
Part Number Case Packaging
DMP1080UCB4-7 U-WLB1010-4 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
BW
YM
DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
BW = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September)
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Page 2
)
r
r
g
g
g
g
(th)
)
r
)
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V Pulsed Drain Current (Note 6)
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @T Thermal Resistance, Junction to Case @T Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @T Operating and Storage Temperature Range
= +25°C (Note 7) R
C
T
Steady
State
Steady
State
= +25°C (Note 7) R
A
= +25°C (Note 5) R
A
= +25°C
A
= +70°C
T
A
T
= +25°C
A
T
= +70°C
A
DMP1080UCB4
V
DSS
V
GSS
I
D
I
D
I
DM
P
D
JAJC
P
D
JA
T
, T
J
STG
-12 V
-6 V
-3.3
-2.7
-3.0
-2.4
A
A
20 A
0.82 W 150 °C/W
42.66 °C/W
1.59 W
80.29 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage
BV BV
I
DSS
GSS DSS GSS
-12 - - V
-6.0 - - V
- - -1
- - -100 nA
VGS = 0V, ID = -250A VDS = 0V, IG = -250A
μA
= -9.6V, VGS = 0V
V
DS
VGS = -6V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Time
V
GS(th
R
DS (ON)
|Y V
Q
fs
SD
r
t
r
-0.4 -0.6 -1.0 V
- 65 80
- 77 93
- 108 130
|
- 4 - S
-0.6 -1.0 V
- 2.0 - nC
- 9.5 - ns
VDS = VGS, ID = -250A
V
= -4.5V, ID = -500mA
mΩ
GS
= -2.5V, ID = -500mA
V
GS
= -1.5V, ID = -500mA
V
GS
VDS = -6V, ID = -500mA
VGS = 0V, IS = -500mA
V
= –4.0V, IF = –0.5A,
dd
di/dt =100A/s DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at Vth Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 5. Device mounted on FR4 material with 1-inch2 (6.45-cm
6. Repetitive rating, pulse width limited by junction temperature.
7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
2
), 2-oz. (0.071-mm thick) Cu.
C C
Q t
t
C
oss rss
Q Q Q
D(on
t
D(off
t
iss
s d
f
- 213 350
- 119 250
- 54.4 90
- 2.5 5
- 0.3 -
- 0.6 -
- 0.15 -
- 16.7 -
- 20.6 -
- 38.4 -
- 28.4 -
pF
nC
ns
V
= -6V, VGS = 0V,
DS
f = 1.0MHz
= -4.5V, VDS = -6V,
V
GS
I
= -500mA
D
= -6V, VGS = -2.5V,
V
DS
R
= 20, ID = -500mA
G
DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
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Page 3
R
CUR
RENT
RAIN CUR
REN
T
R
R
OUR
CE ON-R
TANC
R
R
OUR
ON-R
R
R
OUR
C
R
R
N-SOUR
CE O
N
R
TAN
C
DMP1080UCB4
5.0
4.5
4.0
(A)
3.5
3.0
V= -6.0V
GS
V= -4.5V
GS
V= -4.0V
GS
V= -3.0V
GS
V= -2.5V
GS
V= -2.0V
GS
V= -1.5V
GS
5
V = -5.0V
DS
4
(A)
3
2.5
AIN
2.0
1.5
D
-I , D
1.0
0.5 0
0 0.5 1.0 1.5 2.0 2.5 3.0
-V , DRAIN -SOURCE VOLTAGE (V)
DS
Fig. 1 Typical Output Ch ar acteristics
0.20
Ω
0.18
E ( )
V= -1.2V
GS
V= -1.0V
GS
2
D
-I , D 1
0
0 0.5 1.0 1.5 2.0
-V , GATE-SOURCE VOLTAGE (V)
T = 125C
GS
T = 150C
A
A
°
°
T = 85C
A
T = 25C
A
T = -55C
°
A
°
°
Fig. 2 Typical Transfer Characteristics
0.10
Ω
V= -4.5V
GS
0.16
T = 150 C
°
0.14
ESIS
0.12
0.10
0.08
0.06
AIN-S
0.04
, D
0.02
DS(ON)
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V = -1.5V
GS
V = -2.5V
GS
V = -4.5V
GS
V = -6.0V
GS
-I , DRAIN SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance vs.
Drain Curr ent and G at e Voltage
1.6
1.4
E
V = -2.5V
GS
I = -1.5A
D
1.2
ESISTANCE ( )
0.08
CE
0.06
AIN-S , D
DS(ON)
0.04 01 23 45
-I , DRAIN SOURCE CURRENT (A)
D
Fig. 4 Typical On-Resistance vs.
Drain Curr ent and Temperature
0.16
Ω
E ( )
0.14
0.12
ESIS
0.10
-
-2.
V=5V
GS
-1.5
I= A
D
A
T = 125 C
A
T = 85C
°
A
T = 25C
A
T = -55C
A
°
°
°
AIN-S , D
1.0
DS(ON)
0.8
ON-RESISTANCE (NORMALIZED)
0.6
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
Fig. 5 On-Resistance Variation with T emperature
V = -4.5V
GS
I = -2.0A
D
°
0.08
0.06
AI
0.04
, D
0.02
DS(on)
0
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)
J
V= -4.5V
GS
I= A
-2.0
D
Fig. 6 On- R esistan c e Variation with Temperatur e
°
DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
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GATE THRESH
O
OLTAG
OUR
CE CUR
R
N
T
GE CUR
RENT
R
CUR
RENT
T
R
T
T
HER
R
T
C
1.2
1.0
E (V)
0.8
LD V
0.6
-I = 250µA
-I = 1mAD
D
0.4
0.2
GS(TH)
V,
0
-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)
A
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100,000
10,000
(nA)
1,000
100
T = 150°C
A
T = 125°C
A
T = 85°C
A
10
DSS
-I , LEAKA 1
0.1 0 1 2 3 4 5 6 7 8 9 10 11 12
-V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
Fig. 9 Typi cal Drain-S ource Leakage Current vs. Voltage
1
D = 0.7
E
D = 0.5
AN
D = 0.3
DMP1080UCB4
5
4
(A) E
3
2
S
-I , S 1
0
0 0.3 0.6 0.9 1.2 1.5
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diod e Forward Volt age vs. Current
100
10
(A)
DC
1
P = 10s
AIN
D
-I , D
0.1
T = 150°C
J(max)
T = 25°C
A
V = -6V
GS
Single Pulse DUT on 1 * MRP Board
0.01
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
T= 150C
°
A
T= 125C
°
A
T= 85C
°
A
T= 25C
°
A
T= -55C
°
A
SD
R Limited
W
P = 1s
DS
DS(on)
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10sWµ
Fig. 10 S O A, Safe Oper ation Area
ESIS
0.1
D = 0.1
MAL
D = 0.05
D = 0.02
0.01
D = 0.01
ANSIEN
D = 0.005
r(t),
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
D = 0.9
R (t) = r(t) * R
θθ
JA JA
R = 153°C/W
θ
JA
Duty Cycle, D = t1/ t2
t1, PULSE DURATION TIMES (sec)
Fig. 11 Transient Therma l R esistance
DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
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Page 5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SD
E
A2
A
e
SE
U-WLB1010-4
Dim Min Max Typ
D 0.95 1.05 1.00 E 0.95 1.05 1.00 A
A2
b 0.25 0.35 0.30
e SD SE
All Dimensions in mm
D
4X-Ø b
e
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
ØD
C
C
Dimensions Value (in mm)
C 0.50 D 0.25
0.62
DMP1080UCB4
0.38
0.50
0.25
0.25
DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMP1080UCB4
DMP1080UCB4
Document number: DS35827 Rev. 4 - 2
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