Diodes DMP1080UCB4 User Manual

Product Summary

I

V

R

(BR)DSS

-12V

80m @ V
93m @ VGS = -2.5V

DS(ON)

GS

= -4.5V

D

TA = +25°C

-3.3A

-3.0A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• Battery Management

• Load Switch

• Battery Protection

ESD PROTECTED TO 3kV

U-WLB1010-4

DMP1080UCB4

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Qg & Qgd

• Small Footprint

• Low Profile 0.62mm height

• ESD Protected Up To -3KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-WLB1010-4

• Terminal Connections: See Diagram Below

• Weight: 0.0018 grams (approximate)

D

G

Top View

Equivalent Circuit

D

S

Ordering Information (Note 4)

Part Number Case Packaging

DMP1080UCB4-7 U-WLB1010-4 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

BW

YM

DMP1080UCB4

Document number: DS35827 Rev. 4 - 2

BW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

December 2012

© Diodes Incorporated

)

r

r

g

g

g

g

(th)

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -2.5V
Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient @T
Thermal Resistance, Junction to Case @T
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T
Operating and Storage Temperature Range

= +25°C (Note 7) R

C

T

Steady

State

Steady

State

= +25°C (Note 7) R

A

= +25°C (Note 5) R

A

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

DMP1080UCB4

V

DSS

V

GSS

I

D

I

D

I

DM

P

D

JA
JC

P

D

JA

T

, T

J

STG

-12 V

-6 V

-3.3

-2.7

-3.0

-2.4

A

A

20 A

0.82 W
150 °C/W

42.66 °C/W

1.59 W

80.29 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV
BV

I

DSS

GSS
DSS
GSS

-12 - - V

-6.0 - - V

- - -1

- - -100 nA

VGS = 0V, ID = -250A
VDS = 0V, IG = -250A

μA

= -9.6V, VGS = 0V

V

DS

VGS = -6V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time

V

GS(th

R

DS (ON)

|Y
V

Q

fs

SD

r

t

r

-0.4 -0.6 -1.0 V

- 65 80

- 77 93

- 108 130

|

- 4 - S

-0.6 -1.0 V

- 2.0 - nC

- 9.5 - ns

VDS = VGS, ID = -250A

V

= -4.5V, ID = -500mA

mΩ

GS

= -2.5V, ID = -500mA

V

GS

= -1.5V, ID = -500mA

V

GS

VDS = -6V, ID = -500mA

VGS = 0V, IS = -500mA

V

= –4.0V, IF = –0.5A,

dd

di/dt =100A/s
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR4 material with 1-inch2 (6.45-cm

6. Repetitive rating, pulse width limited by junction temperature.

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

2

), 2-oz. (0.071-mm thick) Cu.

C
C

Q
t

t

C

oss
rss

Q
Q
Q

D(on

t

D(off

t

iss

s
d

f

- 213 350

- 119 250

- 54.4 90

- 2.5 5

- 0.3 -

- 0.6 -

- 0.15 -

- 16.7 -

- 20.6 -

- 38.4 -

- 28.4 -

pF

nC

ns

V

= -6V, VGS = 0V,

DS

f = 1.0MHz

= -4.5V, VDS = -6V,

V

GS

I

= -500mA

D

= -6V, VGS = -2.5V,

V

DS

R

= 20, ID = -500mA

G

DMP1080UCB4

Document number: DS35827 Rev. 4 - 2

2 of 6

www.diodes.com

December 2012

© Diodes Incorporated