Diodes DMP1080UCB4 User Manual

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Page 1

Product Summary

(BR)DSS

-12V

80m @ V 93m @ VGS = -2.5V

DS(ON)

= -4.5V

TA = +25°C

-3.3A

-3.0A

Description

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

) and yet maintain superior switching

DS(on)

Applications

• Battery Management

• Load Switch

• Battery Protection

ESD PROTECTED TO 3kV

U-WLB1010-4

DMP1080UCB4

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Qg & Qgd

• Small Footprint

• Low Profile 0.62mm height

• ESD Protected Up To -3KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: U-WLB1010-4

• Terminal Connections: See Diagram Below

• Weight: 0.0018 grams (approximate)

Top View

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP1080UCB4-7 U-WLB1010-4 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP1080UCB4

Document number: DS35827 Rev. 4 - 2

BW = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September)

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)

(th)

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 5) VGS = -2.5V Pulsed Drain Current (Note 6)

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient @T Thermal Resistance, Junction to Case @T Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @T Operating and Storage Temperature Range

= +25°C (Note 7) R

Steady

State

Steady

State

= +25°C (Note 7) R

= +25°C (Note 5) R

= +25°C

= +70°C

= +25°C

= +70°C

DMP1080UCB4

DSS

GSS

JA JC

JA

, T

STG

-12 V

-6 V

-3.3

-2.7

-3.0

-2.4

20 A

0.82 W 150 °C/W

42.66 °C/W

1.59 W

80.29 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage

BV BV

DSS

GSS DSS GSS

-12 - - V

-6.0 - - V

- - -1

- - -100 nA

VGS = 0V, ID = -250A VDS = 0V, IG = -250A

μA

= -9.6V, VGS = 0V

VGS = -6V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Time

GS(th

DS (ON)

|Y V

-0.4 -0.6 -1.0 V

- 65 80

- 77 93

- 108 130

- 4 - S

-0.6 -1.0 V

- 2.0 - nC

- 9.5 - ns

VDS = VGS, ID = -250A

= -4.5V, ID = -500mA

mΩ

= -2.5V, ID = -500mA

= -1.5V, ID = -500mA

VDS = -6V, ID = -500mA

VGS = 0V, IS = -500mA

= –4.0V, IF = –0.5A,

di/dt =100A/s DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Charge at Vth Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR4 material with 1-inch2 (6.45-cm

6. Repetitive rating, pulse width limited by junction temperature.

7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

), 2-oz. (0.071-mm thick) Cu.

C C

Q t

oss rss

Q Q Q

D(on

D(off

iss

s d

- 213 350

- 119 250

- 54.4 90

- 2.5 5

- 0.3 -

- 0.6 -

- 0.15 -

- 16.7 -

- 20.6 -

- 38.4 -

- 28.4 -

= -6V, VGS = 0V,

f = 1.0MHz

= -4.5V, VDS = -6V,

= -500mA

= -6V, VGS = -2.5V,

= 20, ID = -500mA

DMP1080UCB4

Document number: DS35827 Rev. 4 - 2

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CUR

RENT

RAIN CUR

REN

OUR

CE ON-R

TANC

OUR

ON-R

OUR

N-SOUR

CE O

TAN

DMP1080UCB4

5.0

4.5

4.0

(A)

3.5

3.0

V= -6.0V

V= -4.5V

V= -4.0V

V= -3.0V

V= -2.5V

V= -2.0V

V= -1.5V

V = -5.0V

(A)

2.5

AIN

2.0

1.5

-I , D

1.0

0.5 0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , DRAIN -SOURCE VOLTAGE (V)

Fig. 1 Typical Output Ch ar acteristics

0.20

0.18

E ( )

V= -1.2V

V= -1.0V

-I , D 1

0 0.5 1.0 1.5 2.0

-V , GATE-SOURCE VOLTAGE (V)

T = 125C

T = 150C

T = 85C

T = 25C

T = -55C

Fig. 2 Typical Transfer Characteristics

0.10

V= -4.5V

0.16

T = 150 C

0.14

ESIS

0.12

0.10

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

V = -1.5V

V = -2.5V

V = -4.5V

V = -6.0V

-I , DRAIN SOURCE CURRENT (A)

Fig. 3 Typical On-Resistance vs.

Drain Curr ent and G at e Voltage

1.6

1.4

V = -2.5V

I = -1.5A

1.2

ESISTANCE ( )

0.08

0.06

AIN-S , D

DS(ON)

0.04 01 23 45

-I , DRAIN SOURCE CURRENT (A)

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Temperature

0.16

E ( )

0.14

0.12

ESIS

0.10

-2.

V=5V

-1.5

I= A

T = 125 C

T = 85C

T = 25C

T = -55C

AIN-S , D

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Fig. 5 On-Resistance Variation with T emperature

V = -4.5V

I = -2.0A

0.08

0.06

0.04

, D

0.02

DS(on)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

V= -4.5V

I= A

-2.0

Fig. 6 On- R esistan c e Variation with Temperatur e

DMP1080UCB4

Document number: DS35827 Rev. 4 - 2

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GATE THRESH

OLTAG

OUR

CE CUR

GE CUR

RENT

CUR

RENT

HER

1.2

1.0

E (V)

0.8

LD V

0.6

-I = 250µA

-I = 1mAD

0.4

0.2

GS(TH)

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

100,000

10,000

(nA)

1,000

100

T = 150°C

T = 125°C

T = 85°C

DSS

-I , LEAKA 1

0.1 0 1 2 3 4 5 6 7 8 9 10 11 12

-V , DRAIN-SOURCE VOLTAGE (V)

T = 25°C

Fig. 9 Typi cal Drain-S ource Leakage Current vs. Voltage

D = 0.7

D = 0.5

D = 0.3

DMP1080UCB4

(A) E

-I , S 1

0 0.3 0.6 0.9 1.2 1.5

-V , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Diod e Forward Volt age vs. Current

100

(A)

P = 10s

AIN

-I , D

0.1

T = 150°C

J(max)

T = 25°C

V = -6V

Single Pulse DUT on 1 * MRP Board

0.01

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

T= 150C

T= 125C

T= 85C

T= 25C

T= -55C

R Limited

P = 1s

DS(on)

P = 100ms

P = 10ms

P = 1ms

P = 100µs

P = 10sWµ

Fig. 10 S O A, Safe Oper ation Area

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

R (t) = r(t) * R

θθ

JA JA

R = 153°C/W

Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIMES (sec)

Fig. 11 Transient Therma l R esistance

DMP1080UCB4

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

U-WLB1010-4

Dim Min Max Typ

D 0.95 1.05 1.00 E 0.95 1.05 1.00 A

b 0.25 0.35 0.30

e SD SE

All Dimensions in mm

4X-Ø b

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

ØD

Dimensions Value (in mm)

C 0.50 D 0.25

0.62

−

− −

DMP1080UCB4

−

0.38

0.50

0.25

DMP1080UCB4

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Onl y the English version of this document is the final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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DMP1080UCB4

Document number: DS35827 Rev. 4 - 2

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