Diodes DMP1055UFDB User Manual
Q
Q
Y
Product Summary
I
V
R
(BR)DSS
59m @ V
-12V
81m @ VGS = -2.5V
115m @ VGS = -1.8V
DS(ON) max
= -4.5V
GS
D MAX
TA = +25°C
-3.9A
-3.3A
-2.8A
Description
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
Applications
Load Switch
Power Management Functions
Portable Power Adaptors
ESD PROTECTED
Pin1
D2
U-DFN2020-6
Type B
D2
G1
S1
Bottom View
S2
G2
D1
D1
DMP1055UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Input Capacitance
Low Profile, 0.6mm Max Height
ESD protected gate.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6 Type B
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper leadframe. Solderable per
MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (approximate)
D1
G1
Gate Protect ion
Diode
1 P-CHANNEL
S1
e4
G2
Gate Protec tion
Internal Schematic
Diode
2 P-CHANNEL
D2
S2
Ordering Information (Note 4)
Part Number Case Packaging
DMP1055UFDB -7 U-DFN2020-6 Type B 3000/Tape & Reel
DMP1055UFDB -13 U-DFN2020-6 Type B 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2012 2013 2014 2015 2016 2017 2018
Code Z A B C D E F
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
D6
M
DMP1055UFDB
Document number: DS36934 Rev.1 - 2
D6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
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© Diodes Incorporated
)
g
g
g
r
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Steady
Continuous Drain Current (Note 5) VGS = -4.5V
State
t < 5s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
= +25°C
T
A
T
= +70°C
A
= +25°C
T
A
= +70°C
T
A
Steady State
Steady State
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
P
R
R
T
J, TSTG
JA
JC
D
t < 5s 1.89
t < 5s 66
-12 V
±8 V
-3.9
-3.1
-5.0
-4.0
-1.7
-25 A
1.36
92
18
-55 to +150 °C
DMP1055UFDB
A
A
A
W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
-12
— —
— —
— —
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
V
GS(th
R
DS (ON)
V
SD
-0.4 — -1 V
—
—
—
—
—
37 59
48 81
69 115
88 215
-0.7 -1.2 V
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C
C
oss
C
rss
R
Q
Q
Q
t
D(on)
t
t
D(off)
t
iss
f
g
s
d
Body Diode Reverse Recovery Time trr
Body Diode Reverse Recovery Charge Qrr
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
— 1028 —
— 285 —
— 254 —
— 19.6 —
— 13 —
— 20.8 —
— 1.8 —
— 4.5 —
— 5.6 —
— 12.8 —
— 30.7 —
— 25.4 —
—
—
31.6
7.8
V
-1.0 A
±10 A
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
—
—
nS
nC
VGS = 0V, ID = -250A
VDS = -12V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = -250A
= -4.5V, ID = -3.6A
V
GS
V
= -2.5V, ID = -3.1A
GS
V
= -1.8V, ID = -2.6A
GS
V
= -1.5V, ID = -0.5A
GS
VGS = 0V, IS = -3.7A
V
= -6V, VGS = 0V,
DS
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
= -10V, ID = -4.7A
V
DS
V
= -6V, VGS = -4.5V,
DD
= 1.6, RG = 1
R
L
I
= -3.6A, dI/dt = 100A/s
S
I
= -3.6A, dI/dt = 100A/s
S
DMP1055UFDB
Document number: DS36934 Rev.1 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
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