Diodes DMP1045UFY4 User Manual

NEW PRODUCT

Product Summary

V

Description

This new generation MOSFET has been designed to minimize the onstate resistance (R performance, making it ideal for high efficiency power management applications.

(BR)DSS

-12V

R

32mΩ@ V 45mΩ@ VGS = -2.5V 75mΩ@ VGS = -1.8V

) and yet maintain superior switching

DS(on)

DS(on) max

= -4.5V

GS

TA = 25°C

Applications

• DC-DC Converters

• Power management functions

• Analog Switch

ADVANCE INFORMATION

ESD PROTECTED TO 3kV

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

I

D

-5.5A

-4.5A

-3.2A

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 3kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN2015-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

• per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

X2-DFN2015-3

Top View Bottom View

DMP1045UFY4

e4

D

Internal Schematic

S

G

Ordering Information (Note 4)

Part Number Case Packaging

DMP1045UFY4-7 X2-DFN2015-3 3,000/Tape & Reel

DMP1045UFY4-13 X2-DFN2015-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

DMP1045UFY4

Document number: DS31853 Rev. 7 - 2

15P

YM

www.diodes.com

15P = Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September)

1 of 6

September 2012

)

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage Gate-Source Voltage

Steady

Continuous Drain Current VGS = -4.5V (Note 6)

State

t<5s

Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Notes 6) Steady state

Operating and Storage Temperature Range

DMP1045UFY4

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

TA = +70°C

Steady state

t<5s 135

T

= +25°C

A

TA = +70°C

Steady state

t<5s 52

I

D

I

S

I

DM

P

D

R

θJA

P

D

R

θJA

R

θJC

T

, T

J

STG

-12 V ±8 V

-5.5

-4.3

-6.5

-5.1

-2.2

A

A A

-25 A

0.7

0.4

193

1.7

1.1

W

°C/W

W

73

°C/W

17

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

I

DSS DSS GSS

-12 - - V

- - -1.0

- - ±10

VGS = 0V, ID = -250μA

μA μA

= -12V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

-0.3 -0.55 -1.0 V 26 32

-

31 45 51 75

|

- 12 - S

- -0.6 - V

VDS = VGS, ID = -250μA V

= -4.5V, ID = -4.0A

mΩ

GS

V

= -2.5V, ID = -3.5A

GS

V

= -1.8V, ID = -2.7A

GS

VDS = -5V, ID = -4A VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace

C

iss

C

oss

C

rss

R

- 1291 - pF

- 266 - pF

- 242 - pF

- 13 - Ω

V

= -10V, VGS = 0V

DS

f = 1.0MHz VDS = 0V, V

GS

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge (VGS = -8V) Qg Total Gate Charge (VGS = -4.5V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q

t

D(on

t

D(off

s d

t

f

- 23.7 - nC

- 14.7 nC

- 1.8 - nC

- 4.6 - nC

- 14 - ns

- 22 - ns

- 74 - ns

- 75 - ns

V

= -10V, ID = -4A

DS

= -10V, V

V

DS

R

= 2.5Ω, RG = 3.0Ω

L

GS

= -4.5V,

DMP1045UFY4

Document number: DS31853 Rev. 7 - 2

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www.diodes.com

September 2012

R

CUR

R

T

RAIN CUR

R

N

T

R

OUR

ON-R

R

OUR

CE ON-R

TANC

R

OUR

ON-R

R

OUR

C

NEW PRODUCT

DMP1045UFY4

20

15

(A)

V= -8.0V

GS

V= -4.5V

V= -2.5V

GS

V= -2.0V

GS

V= -1.8V

GS

EN

10

AIN

D

-I , D

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , DRAIN -SOURCE VOLTAGE (V)

DS

V= -1.5V

GS

V= -1.2V

GS

Fig. 1 Typical Output Characteri st ics

0.12

Ω

ADVANCE INFORMATION

0.10

20

V = -5.0V

DS

15

(A) E

10

D

-I , D

5

0

0 0.5 1.0 1.5 2.0 2.5

T = 150C

°

A

T = 125C

°

A

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85C

A

T = 25C

A

T = -55C

°

A

°

Fig. 2 Typical Transfer Characteristics

0.20

Ω

E ( )

0.18

0.16

ESISTANCE ( )

0.08

0.06

CE

V = -1.8V

GS

0.04

V = -2.5V

AIN-S , D

0.02

DS(ON)

0

048121620

-I , DRAIN SOURCE CURRENT (A)

D

GS

V = -4.5V

GS

Fig. 3 Typical On-Resistance vs.

Drain Curr ent and G at e Vol t age

0.06

Ω

ESISTANCE ( )

CE

0.04

0.02

V= -4.5V

GS

T = 125C

°

A

T = 150C

°

A

T = 85C

°

A

T = 25C

°

A

T = -55C

°

A

AIN-S , D

0.14

ESIS

I = -4.0A

0.12

D

0.10

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

0

012345678

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Drain-S ource On- Resistance

vs. G ate- S ource Voltage

1.7

V = -2.5V

1.5

GS

I = -5A

D

E

1.3

1.1

AIN-S , D

0.9

DS(ON)

0.7

ON-RESISTANCE (NORMALIZED)

V = -4.5V

GS

I = -10A

D

DS(ON)

0

0 5 10 15 20

-I , DRAIN SOURCE CURRENT (A)

D

Fig. 5 Typical On-Resistance vs.

Drain Curr ent and Temperature

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 6 On- Resistance Variati on with Temperature

DMP1045UFY4

Document number: DS31853 Rev. 7 - 2

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September 2012

R

OUR

C

ON-R

TANC

GATE THRESH

O

OLTAG

OUR

CE CUR

REN

T

C

UNC

TIO

N CAPACITAN

C

F

GAT

OUR

C

OLTAG

R

CUR

RENT

NEW PRODUCT

DMP1045UFY4

Ω

0.10

1.0

E ( )

E (V)

0.08

0.8

ESIS

-I = 250µA

0.06

E

0.04

AIN-S

0.02

, D

DS(on)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

V=5V

-2.

GS

I= A

-5

D

V = -4.5V

GS

I= A

-10

D

Fig. 7 On-R esis tance Variation with Temperatur e

20

°

0.6

LD V

0.4

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 8 Gate Threshold Variation vs. Ambient Temperature

10,000

ADVANCE INFORMATION

D

f = 1MHz

)

16

(A)

T= 25C

°

12

A

E (p

1,000

C

iss

C

oss

C

8

rss

100

S

-I , S 4

0

0.4 0.6 0.8 1.0 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

1.2

Fig. 9 Diode Forward Voltage vs. Current

8

E (V)

6

, J

T

10

02 4 681012

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 Typical Junction Capacitance

100

R

DS(on)

Limited

P = 10sWµ

10

(A)

V = -10V

DS

I= -4A

E V

D

4

E-S

2

GS

-V ,

0

0 5 10 15 20 25

Q , TOTAL GATE CHARGE (nC)

g

Fig. 11 Gate-Charge Cha r acteristics

DC

P = 10s

1

W

P = 1s

W

AIN

D

-I , D

0.1

0.01

0.1 1 10 100

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

T = 150°C

J(max)

T = 25°C

A

V = -8V

GS

Single Pulse

DUT on 1 * MRP Board

-V , DRAIN-SOURCE VOLTAGE (V)

DS

W

Fig. 12 SOA, Safe Operation Area

DMP1045UFY4

Document number: DS31853 Rev. 7 - 2

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September 2012

T

RAN

N

T T

HER

R

T

N

C

E A

ESIS

MAL

SIE

r(t),

0.001

NEW PRODUCT

ADVANCE INFORMATION

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

DMP1045UFY4

Document number: DS31853 Rev. 7 - 2

DMP1045UFY4

1

D = 0.7 D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

Single Pulse

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

A

A1

E

Y2

G

D

z

e

D2

X

X1

C

t1, PULSE DURATION TIMES (sec)

Fig. 13 Transient Thermal Resistance

A3

SEATING PLANE

L

E2

b

Y1

X

Y

www.diodes.com

D = 0.9

Dim Min Max Typ

A

A1 0 0.05 0.02 A3

b 0.20 0.30 0.25 D 1.45 1.575 1.50

D2 1.00 1.20 1.10

e

E 1.95 2.075 2.00

E2 0.70 0.90 0.80

L 0.25 0.35 0.30

z

All Dimensions in mm

Dimensions Value (in mm)

C 1.00 G 0.15 X 0.31

X1 1.30

Y 0.50 Y1 1.00 Y2 0.65

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R (t) = r(t) * R

θθ

JA JA

R = 193°C/W

θ

JA

Duty Cycle, D = t1/ t2

X2-DFN2015-3

0.40

−

− −

−

0.13

0.50

0.125

September 2012

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP1045UFY4

Document number: DS31853 Rev. 7 - 2

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September 2012

Diodes DMP1045UFY4 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual