Diodes DMP1045UFY4 User Manual

NEW PRODUCT

Product Summary

V

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

(BR)DSS

-12V

R

32mΩ@ V
45mΩ@ VGS = -2.5V
75mΩ@ VGS = -1.8V

) and yet maintain superior switching

DS(on)

DS(on) max

= -4.5V

GS

TA = 25°C

Applications

• DC-DC Converters

• Power management functions

• Analog Switch

ADVANCE INFORMATION

ESD PROTECTED TO 3kV

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

I

D

-5.5A

-4.5A

-3.2A

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected Up To 3kV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN2015-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

• per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

X2-DFN2015-3

Top View Bottom View

DMP1045UFY4

e4

D

Internal Schematic

S

G

Ordering Information (Note 4)

Part Number Case Packaging

DMP1045UFY4-7 X2-DFN2015-3 3,000/Tape & Reel

DMP1045UFY4-13 X2-DFN2015-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

DMP1045UFY4

Document number: DS31853 Rev. 7 - 2

15P

YM

www.diodes.com

15P = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)

1 of 6

September 2012

© Diodes Incorporated

)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage
Gate-Source Voltage

Steady

Continuous Drain Current VGS = -4.5V (Note 6)

State

t<5s

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

ADVANCE INFORMATION

Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Notes 6) Steady state

Operating and Storage Temperature Range

DMP1045UFY4

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

T

= +25°C

A

TA = +70°C

Steady state

t<5s 135

T

= +25°C

A

TA = +70°C

Steady state

t<5s 52

I

D

I

S

I

DM

P

D

R

θJA

P

D

R

θJA

R

θJC

T

, T

J

STG

-12 V
±8 V

-5.5

-4.3

-6.5

-5.1

-2.2

A

A
A

-25 A

0.7

0.4

193

1.7

1.1

W

°C/W

W

73

°C/W

17

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

-12 - - V

- - -1.0

- - ±10

VGS = 0V, ID = -250μA

μA
μA

= -12V, VGS = 0V

V

DS

= ±8V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

-0.3 -0.55 -1.0 V
26 32

-

31 45
51 75

|

- 12 - S

- -0.6 - V

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -4.0A

mΩ

GS

V

= -2.5V, ID = -3.5A

GS

V

= -1.8V, ID = -2.7A

GS

VDS = -5V, ID = -4A
VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace

C

iss

C

oss

C

rss

R

- 1291 - pF

- 266 - pF

- 242 - pF

- 13 - Ω

V

= -10V, VGS = 0V

DS

f = 1.0MHz
VDS = 0V, V

GS

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 8)

Total Gate Charge (VGS = -8V) Qg
Total Gate Charge (VGS = -4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q

Q

t

D(on

t

D(off

s
d

t

t

f

- 23.7 - nC

- 14.7 nC

- 1.8 - nC

- 4.6 - nC

- 14 - ns

- 22 - ns

- 74 - ns

- 75 - ns

V

= -10V, ID = -4A

DS

= -10V, V

V

DS

R

= 2.5Ω, RG = 3.0Ω

L

GS

= -4.5V,

DMP1045UFY4

Document number: DS31853 Rev. 7 - 2

2 of 6

www.diodes.com

September 2012

© Diodes Incorporated