Diodes DMP1045U User Manual
NEW PRODUCT
Product Summary
I
V
R
(BR)DSS
-12V
31mΩ@ V
45mΩ@ VGS =-2.5V
DS(on) max
= -4.5V
GS
D
TA = +25°C
5.2A
4.3A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
DC-DC Converters
Power management functions
Analog Switch
ESD PROTECTED TO 3kV
SOT23
Top View Internal Schematic Pin Configuration
DMP1045U
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0072 grams (approximate)
D
G
S
Gate
Gate
Protection
Diode
e3
Drain
Source
Ordering Information (Note 4)
Part Number Case Packaging
DMP1045U-7 SOT-23 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015
Code X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
15P
Chengdu A/T Site
YM
DMP1045U
Document number: DS35051 Rev. 4 - 2
15P
Shanghai A/T Site
YM
www.diodes.com
15P = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
1 of 6
© Diodes Incorporated
October 2013
V
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
Continuous Drain Current (Note 5) VGS = -2.5V
Continuous Drain Current (Note 6) VGS = -4.5V
Continuous Drain Current (Note 6) VGS = -2.5V
Steady
State
Steady
State
Steady
State
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle=1%) (Note 5)
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
V
V
I
R
R
R
T
J, TSTG
DSS
GSS
I
I
I
I
I
DM
P
P
DMP1045U
D
D
D
D
S
D
JA
D
JA
Jc
-12 V
±8 V
4.0
3.1
3.3
2.6
5.2
4.2
4.3
3.4
A
A
A
A
2 A
40 A
alue Units
0.8 W
168 °C/W
1.3 W
99 °C/W
14.8 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
BV
DSS
I
GSS
DSS
-12
— —
— —
—
— V
-1.0 µA
±10 µA
VGS = 0V, ID = -250µA
VDS = -12V, VGS = 0V
V
= 8V, VDS = 0V
GS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th)
R
DS(ON)
|Y
V
fs
SD
-0.3 -0.55 -1.0 V
—
26 31
31 45
45 75
—
|
—
12
-0.6
—
—
VDS = VGS, ID = -250µA
V
= -4.5V, ID = -4.0A
GS
mΩ
V
= -2.5V, ID = -3.5A
GS
= -1.8V, ID = -2.7A
V
GS
S
VDS = -5V, ID = -4A
V
VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
C
iss
C
oss
C
rss
R
g
—
—
—
—
1357
504
235
14.1
—
—
—
—
pF
pF
pF
Ω
= -10V, VGS = 0V
V
DS
f = 1.0MHz
VDS = 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Q
Q
Q
t
D(on)
t
D(off)
g
gs
gd
t
r
t
f
—
—
—
—
—
—
—
15.8
2.0
3.9
15.7
23.3
91.2
106.9
—
—
—
—
—
—
—
nC
nC
nC
ns
ns
ns
ns
= -4.5V, V
V
GS
= -10V, V
V
DS
R
= 2.5, RG = 3.0
L
DS
GS
= -10V, ID = -4A
= -4.5V,
DMP1045U
Document number: DS35051 Rev. 4 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
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