Diodes DMP1022UFDF User Manual

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Page 1

DMP1022UFDF

Datasheet number: DS36624 Rev. 3 - 2

1 of 6

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March 2014

DMP1022UFDF

NEW PRODUCT

Product Summary

(BR)DSS

DS(ON)

max

ID max

TA = +25°C

-12V

15.3mΩ @ VGS = -4.5V

-9.5A

19mΩ @ VGS = -2.5V

-8.5A

26.5mΩ @ VGS = -1.8V

-7.2A

32mΩ @ VGS = -1.5V

-6.6A

Description

This MOSFET has been designed specifically for use in battery management applications.

Features

 0.6mm profile – ideal for low profile applications  PCB footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

 Weight: 0.0065 grams (approximate)

Part Number

Marking

Reel Size (inches)

Quantity per Reel

DMP1022UFDF-7

3,000

DMP1022UFDF-13

10,000

Year

2011

2012

2013

2014

2015

2016

2017

Code Y Z A B C D

E Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1 2 3 4 5 6 7 8 9 O N

Pin Out

ESD PROTECTED

Internal Schematic

PU = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

U-DFN2020-6

Bottom View

Top View

Gate Protection

Diode

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Ordering Information (Note 4)

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

Date Code Key

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

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DMP1022UFDF

Datasheet number: DS36624 Rev. 3 - 2

2 of 6

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March 2014

DMP1022UFDF

NEW PRODUCT

Characteristic

Symbol

Value

Units

Drain-Source Voltage

DSS

-12

Gate-Source Voltage

GSS

±8

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

TA = +25°C TA = +70°C

-9.5

-7.6

t<5s

TA = +25°C TA = +70°C

-11.0

-8.8

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

IDM

-90

Continuous Source-Drain Diode Current

TA = +25°C TC = +25°C

-2.5

-7.1

Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)

ISM

-50

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

0.73

TA = +70°C

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

θJA

172

°C/W

t<5s

128

Total Power Dissipation (Note 6)

TA = +25°C

2.1

TA = +70°C

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

θJA

°C/W

t<5s

Thermal Resistance, Junction to Case (Note 6)

Steady state

θJC

5.1

Operating and Storage Temperature Range

J, TSTG

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

-12 — —

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current TJ = +25°C

DSS

—

-1

µA

VDS = -12V, VGS = 0V

Gate-Source Leakage

GSS

—

±10

µA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

GS(th)

-0.35 — -0.8

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

DS(ON)

— 12

15.3

mΩ

VGS = -4.5V, ID = -4A

VGS = -2.5V, ID = -4A

26.5

VGS = -1.8V, ID = -4A

VGS = -1.5V, ID = -2A

Diode Forward Voltage

VSD

—

-0.8

-1.2

VGS = 0V, IS = -8A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

—

2712

—

VDS = -10V, VGS = 0V, f = 1.0MHz

Output Capacitance

oss

—

514

—

Reverse Transfer Capacitance

rss

—

467

—

Gate Resistance

—

8.6

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

—

48.3

—

VGS = -8V, VDS = -6V, ID = -10A

Total Gate Charge

—

28.6

—

VGS = -4.5V, VDS = -6V, ID = -10A

Gate-Source Charge

Qgs

—

4.2

—

Gate-Drain Charge

Qgd

—

7.0

—

Turn-On Delay Time

D(on)

—

25.1

—

VDS = -6V, VGS = -4.5V, RG = 1Ω, ID = -8A

Turn-On Rise Time

—

39.8

—

Turn-Off Delay Time

D(off)

—

141

—

Turn-Off Fall Time

—

147

—

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Thermal Characteristics

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

8. Guaranteed by design. Not subject to production testing

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect

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DMP1022UFDF

Datasheet number: DS36624 Rev. 3 - 2

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DMP1022UFDF

NEW PRODUCT

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V , DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics

-I , DRAIN CURRENT (A)

V = -2.0V

V = -2.5V

V = -8.0V

V = -4.5V

V = -1.2V

V = -1.5V

V = -1.8V

0 0.5 1 1.5 2 2.5 3

-V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

-I , DRAIN CURRENT (A)

T = 150 C



T = 125 C



T = 85 C



T = 25 C



T = -55 C



V = -5.0V

0.01

0.02

0.03

0.04

0.05

0.06

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



V = -1.5V

V = -1.8V

V = -2.5V

V = -4.5V

0.005

0.01

0.015

0.02

0.025

0.03

0 4 8 12 16 20

-I , DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



T = -55 C



T = 25 C



T = 85 C



T = 150 C



V = -4.5V

T = 125 C



0.5

0.7

0.9

1.1

1.3

1.5

1.7

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)



Figure 5 On-Resistance Variation with Temperature

R , DRAIN-SOURCE

ON-RESISTANCE (NORMALIZED)

DS(ON)

V = -4.5V I = -10A

V = -2.5V I = -5A

0.01

0.02

0.03

0.04

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)



Figure 6 On-Resistance Variation with Temperature

V = -4.5V I = A

-10

V = 5V I = A

-2.

-5

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(on)



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DMP1022UFDF

Datasheet number: DS36624 Rev. 3 - 2

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March 2014

DMP1022UFDF

NEW PRODUCT

0.2

0.4

0.6

0.8

1.2

1.4

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

-I = 1mAD

-I = 250µA

0.4 0.6 0.8 1 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

-I , SOURCE CURRENT (A)

T = 25 C



500

1000

1500

2000

2500

3000

3500

4000

0 3 6 9 12 15

C , JUNCTION CAPACITANCE (pF)

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

oss

rss

f = 1MHz

iss

0 5 10 15 20 25 30 35 40 45 50

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate-Charge Characteristics

-V , GATE-SOURCE VOLTAGE (V)

V = -6V I = -10A

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIMES (sec)

Figure 11 Transient Thermal Resistance

r(t), TRANSIENT THERMAL RESISTANCE

D = 0.7

D = 0.9

D = 0.5 D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

R (t) = r(t) * R R = 172°C/W Duty Cycle, D = t1/ t2





JA JA JA

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DMP1022UFDF

Datasheet number: DS36624 Rev. 3 - 2

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March 2014

DMP1022UFDF

NEW PRODUCT

U-DFN2020-6

Dim

Min

Max

Typ

0.57

0.63

0.60

A1 0 0.05

0.03

A3 - -

0.15

0.25

0.35

0.30

1.95

2.05

2.00

0.85

1.05

0.95

0.33

0.43

0.38

0.65 BSC

0.863 BSC

1.95

2.05

2.00

1.05

1.25

1.15

0.65

0.75

0.70

0.225

0.325

0.275 Z 0.20 BSC

0.110 BSC

All Dimensions in mm

Dimensions

Value (in mm)

0.650

0.400

0.480

0.950

1.700

0.425

0.800

1.150

1.450

2.300

Seating Plane

Z(4X)

Pin1

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

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DMP1022UFDF

Datasheet number: DS36624 Rev. 3 - 2

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March 2014

DMP1022UFDF

NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

IMPORTANT NOTICE

LIFE SUPPORT