Diodes DMP1022UFDF User Manual
DMP1022UFDF
Datasheet number: DS36624 Rev. 3 - 2
1 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMP1022UFDF
NEW PRODUCT
Product Summary
V
(BR)DSS
R
DS(ON)
max
ID max
TA = +25°C
-12V
15.3mΩ @ VGS = -4.5V
-9.5A
19mΩ @ VGS = -2.5V
-8.5A
26.5mΩ @ VGS = -1.8V
-7.2A
32mΩ @ VGS = -1.5V
-6.6A
Description
This MOSFET has been designed specifically for use in battery
management applications.
Features
0.6mm profile – ideal for low profile applications
PCB footprint of 4mm2
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
Part Number
Marking
Reel Size (inches)
Quantity per Reel
DMP1022UFDF-7
PU
7
3,000
DMP1022UFDF-13
PU
13
10,000
Year
2011
2012
2013
2014
2015
2016
2017
Code Y Z A B C D
E Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N
D
Pin Out
ESD PROTECTED
Internal Schematic
PU = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
U-DFN2020-6
Bottom View
PU
YM
Bottom View
Top View
D
S
G
Gate Protection
Diode
e4
12V P-CHANNEL ENHANCEMENT MODE MOSFET
Ordering Information (Note 4)
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
Date Code Key
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMP1022UFDF
Datasheet number: DS36624 Rev. 3 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMP1022UFDF
NEW PRODUCT
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
-12
V
Gate-Source Voltage
V
GSS
±8
V
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-9.5
-7.6
A
t<5s
TA = +25°C
TA = +70°C
ID
-11.0
-8.8
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
IDM
-90
A
Continuous Source-Drain Diode Current
TA = +25°C
TC = +25°C
IS
-2.5
-7.1
A
Pulsed Source-Drain Diode Current (10μs pulse, duty cycle = 1%)
ISM
-50
A
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
TA = +25°C
PD
0.73
W
TA = +70°C
0.47
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
172
°C/W
t<5s
128
Total Power Dissipation (Note 6)
TA = +25°C
PD
2.1
W
TA = +70°C
1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
59
°C/W
t<5s
45
Thermal Resistance, Junction to Case (Note 6)
Steady state
R
θJC
5.1
Operating and Storage Temperature Range
T
J, TSTG
-55 to +150
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-12 — —
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
I
DSS
—
—
-1
µA
VDS = -12V, VGS = 0V
Gate-Source Leakage
I
GSS
—
—
±10
µA
VGS = ±8V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.35 — -0.8
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
12
15.3
mΩ
VGS = -4.5V, ID = -4A
15
19
VGS = -2.5V, ID = -4A
20
26.5
VGS = -1.8V, ID = -4A
23
32
VGS = -1.5V, ID = -2A
Diode Forward Voltage
VSD
—
-0.8
-1.2
V
VGS = 0V, IS = -8A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
—
2712
—
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
514
—
Reverse Transfer Capacitance
C
rss
—
467
—
Gate Resistance
Rg
—
8.6
18
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
—
48.3
—
nC
VGS = -8V, VDS = -6V, ID = -10A
Total Gate Charge
Qg
—
28.6
—
VGS = -4.5V, VDS = -6V,
ID = -10A
Gate-Source Charge
Qgs
—
4.2
—
Gate-Drain Charge
Qgd
—
7.0
—
Turn-On Delay Time
t
D(on)
—
25.1
—
ns
VDS = -6V, VGS = -4.5V,
RG = 1Ω, ID = -8A
Turn-On Rise Time
tr
—
39.8
—
Turn-Off Delay Time
t
D(off)
—
141
—
Turn-Off Fall Time
tf
—
147
—
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Thermal Characteristics
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
8. Guaranteed by design. Not subject to production testing
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
Loading...