Diodes DMP1022UFDE User Manual

n

Product Summary

I

max

V

R

(BR)DSS

16mΩ @ V

-12V

21.5m @ VGS = -2.5V 26m @ VGS = -1.8V 32m @ VGS = -1.5V

DS(ON)

max

= -4.5V

GS

D

TA = 25°C

-9.1A

-7.9A

-7.0A

-6.3A

Description

This MOSFET has been designed specifically for use in battery management applications.

ESD PROTECTED

Pin1

U-DFN2020-6

Type E

Bottom View

DMP1022UFDE

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• 0.6mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected to 3KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

2

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

Drai

D

6

D

5

SSG34

Bottom View

Pin Out

DD1

Gate

2

Gate Protection Diode

Internal Schematic

Source

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Quantity per reel

DMP1022UFDE-7 P4 7 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

P4

www.diodes.com

P4 = Product Type Marking Code YM = Date Code Marking

YM

Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)

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July 2012

θ

R

C

U

R

RENT

P, P

T

R

T

P

O

R

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

t<5s

Pulsed Drain Current (10s pulse, duty cycle = 1%)

T

= +25°C

Continuous Source-Drain Diode Current

A

T

= +25°C

C

Pulsed Source-Drain Diode Current (10s pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Steady state

Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

100

R

DS(on)

Limited

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.01 0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

(A)

AIN

-I , D

D

10

1

0.1

0.01

P = 10sWµ

Fig. 1 SOA, Safe Oper ation Area

A

TA = +70°C

Steady state

t<5s 123

T

= +25°C

A

TA = +70°C

Steady state

t<5s 40

100

90

(W)

80 70

IWE

60 50

ANSIEN

40 30

EAK

20

(PK)

10

0

DMP1022UFDE

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

I

SM

P

D

R

JA

θ

P

D

R

JA

θ

R

JC

T

J, TSTG

0.001 0.01 0.1 1 10 100 1,0000.0001 t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

-12 V ±8 V

-9.1

-7.2

-11.2

-9.0

-90 A

-2.5

-7.1

-50 A

0.66

0.42 189

2.03

1.3 61

9.3

-55 to +150 °C

Single Pulse R = 61C/W

°

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

θ

A

W

°C/W

W

°C/W

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

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July 2012

T

R

T T

HER

R

TANC

)

g

)

r

)

r

DMP1022UFDE

1

D = 0.7

E

D = 0.5 D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

R (t)=r(t) * R

θθ

JA JA

R =61°C/W

θ

JA

Duty Cycle, D=t1/ t2

t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Ther m al Resistance

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C I Gate-Source Leakage

BV

DSS

I

GSS

DSS

-12 — — V — — — —

-1 µA

±2 µA

VGS = 0V, ID = -250A

= -12V, VGS = 0V

V

DS

= ±5V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7) Gate Threshold Voltage

V

Temperature Coefficient

GS(th)

On-State Drain Current

Static Drain-Source On-Resistance

Forward Transfer Admittance Diode Forward Voltage

ΔV

V

GS(th

GS(th)

I

D(ON

R

DS (ON)

|Y V

SD

|

fs

-0.35 — -0.8 V

/ΔT

- 2.5

J

-10 —

—

— 12 16 15 21.5

—

20 26 23 32 46 95

— —

12 - S

-0.8 -1.2 V

mV/°C

A

mΩ

VDS = VGS, ID = -250A I

= -250A

D

V

= -4.5V, VDS < -5A

GS

= -4.5V, ID = -8.2A

V

GS

V

= -2.5V, ID = -7.2A

GS

V

= -1.8V, ID = -6.6A

GS

V

= -1.5V, ID = -1A

GS

V

= -1.2V, ID = -1A

GS

VDS = -4V, ID = -8.2A

VGS = 0V, IS = -8A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

C C

t

C

oss rss

R Q

Q Q Q

D(on

t

D(off

t

iss

s d

f

— 2953 — — 756 — — 678 — — 8.6 18 — 28.4 42.6 — 25.3 38 — 2.3 — — 7.2 — — 20 30 — 28 42 — 117 176 — 93 139

= -4V, VGS = 0V,

V

pF

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz VGS = -5V, VDS = -4, ID = -10A

nC

ns

= -4.5V, VDS = -4V,

V

GS

I

= -10A

D

= -4V, VGS = -4.5V,

V

DS

= 1, RL = 0.4, ID = -9.8A

R

G

BODY DIODE CHARACTERISTICS Diode Forward Voltage

Continuous Source-Drain Diode Current (Note 6) Pulse Diode Forward Current (Note 8)

Bodyy Diode Reverse Recovery Time (Note 8) Reverse Recovery Fall Time Reverse Recovery Rise Time Body Diode Reverse Recovery Charge (Note 8)

Notes: 7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

V

SD

I

S

I

SM

t

r

t

a

t

b

Q

r

www.diodes.com

—

-0.8 -1.2 V — — -2.5 — — -7.1 — — -50 — — — —

28 10 18 13

3 of 7

56 — — 26

A

ns

nC

= 0V, IS = -9.8A

V

GS

= +25°C

T

A

T

= +25°C

C

—

= -9.8A, dI/dt = 100A/s

I

S

July 2012

RAIN CUR

R

N

T

R

C

URRENT

R,DR

OUR

ON-R

R

OUR

ON-R

R

N

OUR

C

R

N-SOUR

C

O

N

R

TAN

C

DMP1022UFDE

(A) E

30

25

20

V = -8.0V

GS

V = -4.5V

GS

V = -2.5V

GS

V = -2.0V

GS

V = -1.8V

GS

20

V = -5.0V

DS

16

(A)

12

15

V = -1.5V

GS

8

AIN

10

D

-I , D 5

V = -1.2V

0

012345

-V , DRAIN -SOURCE VOLTAGE(V)

DS

GS

Fig. 4 Typical Output Characteristics

0.06

Ω

0.05

D

-I , D 4

0

0 0.5 1.0 1.5 2.0 2.5 3.0

T = 150C

°

A

T = 125C

°

A

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 85C

A

T = 25C

A

T = -55C

°

A

°

Fig. 5 Typical Transfer Characteristics

0.030

Ω

V = -4.5V

GS

0.025

ESISTANCE( )

0.04

0.03

CE

0.02

AIN-S

0.01

DS(ON)

0

0 5 10 15 20 25 30

-I , DRAIN SOURCE CURRENT

D

Fig. 6 Typical On-Resistance vs.

Drain Curr ent and Gate V ol tage

1.7

1.5

E

1.3

-S

1.1

AI , D

0.9

DS(ON)

ON-RESIST ANCE (Norma lized)

0.7

ESISTANCE( )

0.020

CE

0.015

0.010

AIN-S , D

0.005

DS(ON)

0

048121620

-I , DRAIN SOURCE CURRENT (A)

D

T = 150 C

A

T = 125 C

A

T = 85C

A

T = 25C

A

T = -55C

A

Fig. 7 Typical On-Resistance vs.

Drain Curr ent and Temperature

0.04

Ω

E ( )

0.03

ESIS

E

AI

0.02

0.01

V=.5V

-2

GS

I= A

-5

D

V = -4.5V

GS

I= A

-10

D

, D

°

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERAT URE ( C)

J

°

Fig. 8 On-Resistance Variation with Temperature

DS(ON)

0

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

Fig. 9 On-Resistance Variation with Temperature

°

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

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July 2012

GATE THRESH

O

T

G

OUR

CE C

URRENT

C

UNC

TION CAPACITANC

F

GE CUR

REN

T

GAT

OUR

C

OLT

G

1.4

1.2

E(V) A

L

1.0

LD V

0.8

0.6

0.4

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C)

A

Fig. 10 Gat e Threshold Variation vs. Ambient Temperatur e

4,000

DMP1022UFDE

20

16

(A)

12

8

S

-I , S 4

0

0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 11 Diode Forwar d Voltage vs . Current

100,000

3,500

)

3,000

E (p

C

2,500

iss

2,000

1,500

1,000

, J

T

500

0

0 3 6 9 12 15

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

oss

C

rss

Fig. 12 Typical Junction Capacitance

8

E (V)

6

A

E V

4

f = 1MHz

(nA)

T = 150°C

10,000

A

T = 125°C

A

1,000

T = 85°C

DSS

-I , LEAKA

100

0 2 4 6 8 10 12

-V , DRAIN-SOURCE VOLTAGE(V)

DS

A

T = 25°C

A

Fig. 13 Typical Drain-Source Leakage Current vs. Voltage

E-S

2

GS

V,

0

0 5 10 15 20 25 30 35 40 45 50

Q , TOTAL GATE CHARGE (nC)

g

Fig. 14 Gate-Charge Characteristics

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

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July 2012

Package Outline Dimensions

A

D

E

E2

D2

Z(4X)

e

Suggested Pad Layout

Y3

Y2

X2

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

X (6x)

L1

b1

DMP1022UFDE

A3

A1

K1

L(2X)

K2

b(6X)

Dimensions

C 0.650

Y1

X1

C

Y (2x)

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X 0.400 X1 0.285 X2 1.050

Y 0.500 Y1 0.920 Y2 1.600 Y3 2.300

U-DFN2020-6

Dim Min Max Typ

A 0.57 0.63 0.60

A1 0 0.05 0.03 A3

b 0.25 0.35 0.30

b1 0.185 0.285 0.235

D 1.95 2.05 2.00

D2 0.85 1.05 0.95

E 1.95 2.05 2.00

E2 1.40 1.60 1.50

e

L 0.25 0.35 0.30

L1 0.82 0.92 0.87 K1 K2

Z

Type E

− −

All Dimensions in mm

Value

(in mm)

0.15

0.65

0.305

0.225

0.20

July 2012

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

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July 2012