Diodes DMP1022UFDE User Manual

n

Product Summary

I

max

V

R

(BR)DSS

16mΩ @ V

-12V

21.5m @ VGS = -2.5V
26m @ VGS = -1.8V
32m @ VGS = -1.5V

DS(ON)

max

= -4.5V

GS

D

TA = 25°C

-9.1A

-7.9A

-7.0A

-6.3A

Description

This MOSFET has been designed specifically for use in battery
management applications.

ESD PROTECTED

Pin1

U-DFN2020-6

Type E

Bottom View

DMP1022UFDE

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Features

• 0.6mm profile – ideal for low profile applications

• PCB footprint of 4mm

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected to 3KV

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

2

Mechanical Data

• Case: U-DFN2020-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.0065 grams (approximate)

Drai

D

6

D

5

SSG34

Bottom View

Pin Out

DD1

Gate

2

Gate
Protection
Diode

Internal Schematic

Source

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Quantity per reel

DMP1022UFDE-7 P4 7 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

P4

www.diodes.com

P4 = Product Type Marking Code
YM = Date Code Marking

YM

Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 7

July 2012

© Diodes Incorporated

θ

R

C

U

R

RENT

P, P

T

R

T

P

O

R

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

t<5s

Pulsed Drain Current (10s pulse, duty cycle = 1%)

T

= +25°C

Continuous Source-Drain Diode Current

A

T

= +25°C

C

Pulsed Source-Drain Diode Current (10s pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Value Units

T

= +25°C

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Steady state

Operating and Storage Temperature Range

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

100

R

DS(on)

Limited

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

0.01 0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

(A)

AIN

-I , D

D

10

1

0.1

0.01

P = 10sWµ

Fig. 1 SOA, Safe Oper ation Area

A

TA = +70°C

Steady state

t<5s 123

T

= +25°C

A

TA = +70°C

Steady state

t<5s 40

100

90

(W)

80
70

IWE

60
50

ANSIEN

40
30

EAK

20

(PK)

10

0

DMP1022UFDE

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

I

SM

P

D

R

JA

θ

P

D

R

JA

θ

R

JC

T

J, TSTG

0.001 0.01 0.1 1 10 100 1,0000.0001
t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

-12 V
±8 V

-9.1

-7.2

-11.2

-9.0

-90 A

-2.5

-7.1

-50 A

0.66

0.42
189

2.03

1.3
61

9.3

-55 to +150 °C

Single Pulse
R = 61C/W

°

θ

JA

R = r * R

θθ

JA(t) (t) JA

T - T = P * R

JA JA(t)

θ

A

A

A

W

°C/W

W

°C/W

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

2 of 7

www.diodes.com

July 2012

© Diodes Incorporated

T

R

T T

HER

R

TANC

)

)

g

g

g

g

g

)

r

)

r

r

DMP1022UFDE

1

D = 0.7

E

D = 0.5
D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

D = 0.9

R (t)=r(t) * R

θθ

JA JA

R =61°C/W

θ

JA

Duty Cycle, D=t1/ t2

t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Ther m al Resistance

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

-12 — — V
— —
— —

-1 µA

±2 µA

VGS = 0V, ID = -250A

= -12V, VGS = 0V

V

DS

= ±5V, VDS = 0V

V

GS

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

Temperature Coefficient

GS(th)

On-State Drain Current

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

ΔV

V

GS(th

GS(th)

I

D(ON

R

DS (ON)

|Y
V

SD

|

fs

-0.35 — -0.8 V

/ΔT

- 2.5

J

-10 —

—

—
12 16
15 21.5

—

20 26
23 32
46 95

—
—

12 - S

-0.8 -1.2 V

mV/°C

A

mΩ

VDS = VGS, ID = -250A
I

= -250A

D

V

= -4.5V, VDS < -5A

GS

= -4.5V, ID = -8.2A

V

GS

V

= -2.5V, ID = -7.2A

GS

V

= -1.8V, ID = -6.6A

GS

V

= -1.5V, ID = -1A

GS

V

= -1.2V, ID = -1A

GS

VDS = -4V, ID = -8.2A

VGS = 0V, IS = -8A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

C
C

t

t

C

oss
rss

R
Q

Q
Q
Q

D(on

t

D(off

t

iss

s
d

f

— 2953 —
— 756 —
— 678 —
— 8.6 18
— 28.4 42.6
— 25.3 38
— 2.3 —
— 7.2 —
— 20 30
— 28 42
— 117 176
— 93 139

= -4V, VGS = 0V,

V

pF

DS

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz
VGS = -5V, VDS = -4, ID = -10A

nC

ns

= -4.5V, VDS = -4V,

V

GS

I

= -10A

D

= -4V, VGS = -4.5V,

V

DS

= 1, RL = 0.4, ID = -9.8A

R

G

BODY DIODE CHARACTERISTICS
Diode Forward Voltage

Continuous Source-Drain Diode Current (Note 6)
Pulse Diode Forward Current (Note 8)

Bodyy Diode Reverse Recovery Time (Note 8)
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Body Diode Reverse Recovery Charge (Note 8)

Notes: 7. Short duration pulse test used to minimize self-heating effect

8. Guaranteed by design. Not subject to production testing

DMP1022UFDE

D

atasheet number: DS35477 Rev. 9 - 2

V

SD

I

S

I

SM

t

r

t

a

t

b

Q

r

www.diodes.com

—

-0.8 -1.2 V
— — -2.5
— — -7.1
— — -50
—
—
—
—

28
10
18
13

3 of 7

56
—
—
26

A

ns

nC

= 0V, IS = -9.8A

V

GS

= +25°C

T

A

T

= +25°C

C

—

= -9.8A, dI/dt = 100A/s

I

S

© Diodes Incorporated

July 2012