Diodes DMP1018UCB9 User Manual

Product Summary

V

R

(BR)DSS

-12V

18m @ V

DS(ON)

GS

= -4.5V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

switching performance, making it ideal for high efficiency power

management applications.

) and yet maintain superior

DS(ON)

Applications

 Battery Management

 Load Switch

 Battery Protection

ADVANCE INFORMATION

ESD PROTECTED TO 3kV

Features

I

D

-7.6 A

 Low Qg & Qgd

 Small Footprint 1.5-mm × 1.5-mm

 Gate ESD Protection 3kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-WLB1515-9

 Terminal Connections: See Diagram Below

S

GS

SS

S

DD

D

Top-View

Pin Configuration

DMP1018UCB9

P-CHANNEL ENHANCEMENT MODE MOSFET

Gate

Source

Drain

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP1018UCB9-7 U-WLB1515-9 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

EW

YM

EW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)

DMP1018UCB9

Document number: DS36149 Rev. 2 - 2

1 of 6

www.diodes.com

June 2013

© Diodes Incorporated

)

r

r

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -4.5V

Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

ADVANCE INFORMATION

Steady

State

Steady

State

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

P

P
R
R

T

J, TSTG

DMP1018UCB9

V

DSS

V

GSS

I

D

I

D

I

DM

D

D

Θ

JA

Θ

JA

-55 to +150 °C

-12 V

-6 V

-7.6

-6.0

-5.5

-4.3

A

A

-60 A

1.0 W

1.8 W

126.8 °C/W
69 °C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

-12 - - V

- - -1 μA

- - -100 nA

VGS = 0V, ID = -250μA
VDS = -9.6V, VGS = 0V
VGS = -6V, VDS = 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time

V

GS(th

R

DS (ON)

|Y
V

fs

SD

Q

r

t

r

-0.4 -0.8 -1.3 V

-

|

- 5.5 - S

- -0.7 -1 V

-

-

12 18
15 22

30.2

71.4

- nC

- ns

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -2A

m

GS

V

= -2.5V, ID = -2A

GS

VDS = -6V, ID = -2A
VGS = 0V, IS = -2A

= -5V, IF = -2A,

V

dd

di/dt = 200A/µs

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR4 material with 1-inch

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

2

(6.45-cm2), 2-oz. (0.071-mm thick) Cu

DMP1018UCB9

Document number: DS36149 Rev. 2 - 2

C

iss

C

oss

C

rss

R

G

Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

-

-

-

-

-

-

-

-

-

-

2 of 6

457 ­272 ­120 -

21.23 -

4.9 -

0.6

1.1

4.45

12.0
100

93

- nC

- nC

- ns

- ns

- ns

- ns

pF
pF
pF

= -6V, VGS = 0V,

V

DS

f = 1.0MHz

 VDS = 0V, VGS = 0V, f = 1.0MHz

nC

= -4.5V, VDS = -6V,

V

GS

= -2A

I

D

V

= -6V, VGS = -4.5V,

DD

I

= -2A, RG = 2,

DS

June 2013

© Diodes Incorporated

R

CUR

RENT

R

CUR

R

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

R

OUR

C

R

R

N-SOUR

C

O

N-R

T

N

C

20

15

V= -3.0V

GS

V= -2.5V

GS

V= -2.0V

GS

V= -1.8V

GS

(A)

(A)

EN

10

8

6

V = -5.0V

DS

10

DMP1018UCB9

AIN

D

-I , D

5

0

0 0.5 1.0 1.5 2.0 2.5 3.0

-V , DRAIN -SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteristics

0.030



V= -1.5V

GS

V= -1.2V

GS

4

AIN

D

-I , D
2

0

0 0.5 1.0 1.5 2.0

-V , GATE-SOURCE VOLTAGE (V)

GS

T = 150CA

T = 125 CA

T = 85CA

T = 25CA

T = -55CA

Figure 2 Typical Transfer Characteristics

0.020



V= -4.5V

GS

T = 150 CA

0.025

ADVANCE INFORMATION

ESISTANCE ( )

0.020

V = -2.5V

GS

0.015

CE

0.010

AIN-S

, D

0.005

DS(ON)

0

12 345678 910

-I , DRAIN SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

1.7

1.5

E

1.3

1.1

AIN-S

, D

0.9

DS(ON)

0.7

ON-RESISTANCE (NORMALIZED)

0.5

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 5 On-Resistance Variation with Temperature

DMP1018UCB9

Document number: DS36149 Rev. 2 - 2

V = -4.5V

GS

V = -6.0V

GS

V = -4.5V

GS

I = -5A

D

V = -2.5V

GS

I = -1A

D



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0.015

ESISTANCE ( )

0.010

CE

AIN-S

0.005

, D

DS(ON)

0

0246810

-I , DRAIN SOURCE CURRENT (A)

D

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.030



E ( )

0.025

A

V=5V

-2.

ESIS

0.020

E

0.015

0.010

AI

, D

0.005

DS(on)

0

-50 -25 0 25 50 75 100 125 150

GS

I= A

-1

D

V= -4.5V

GS

I= A

-5

D

T , JUNCTION TEMPERATURE ( C)

J

Figure 6 On-Resistance Variation with Temperature

T = 125 CA

T = 85CA

T = 25CA

T = -55CA



© Diodes Incorporated

June 2013

GATE THRESH

O

OLTAG

OUR

CE C

U

R

R

T

C

UNC

TION CAPACITANC

F

G

O

U

R

C

O

G

RAIN C

URR

N

T

1.4

1.2

E (V)

1.0

LD V

0.8

0.6

-I = 250µA

D

-I = 1mAD

(A)

EN

10

8

6

T= 25CA

4

DMP1018UCB9

0.4

0.2

GS(TH)

V,

0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

A

Figure 7 Gate Threshold Variation vs. Ambient Temperature

10,000

f = 1MHz

S

-I , S
2

0

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forwar d Voltage vs. Current

100

)

ADVANCE INFORMATION

E (p

1,000

C

iss

C

oss

100

, J

T

10

024681012

-V , DRAIN-SOURCE VOLTAGE (V)

DS

C

rss

Figure 9 Typical Junction Capacitance

6

10

T = 150°C

A

1

T = 125°C

A

T = 85°C

A

0.1

GSS

-I , LEAKAGE CURRENT (nA)

0.01
123 456

-V , GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

Figure 10 Typical Gate-Source Leakage Current vs. Voltage

100

5

E (V)

V= -6V

LTA

4

DS

I= -2A

D

E V

3

2

AT E- S

GS

1

-V ,

0

012345678

DMP1018UCB9

Document number: DS36149 Rev. 2 - 2

Q , TOTAL GATE CHARGE (nC)

g

Figure 11 Gate-Charge Characteristics

4 of 6

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10

(A)

E

D

-I , D

0.01

DC

P = 10s

W

1

0.1

P = 1s

W

P = 100ms

W

P = 10ms

W

T = 150°C

J(max)

T = 25°C

A

Single Pulse
DUT on 1*MRP board
V= -6V

GS

P = 1ms

W

P = 100µs

W

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12 SOA, Safe Operation Area

June 2013

© Diodes Incorporated

T

R

T T

HER

R

TANC

1

D = 0.7

E

D = 0.5

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

Single Pulse

0.001

0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)

Figure 13 Transient Thermal Resistance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

PIN ID

D

6X-Ø b

E

e

e

e

e

A2

A3

A

SEATING PLANE

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

D

D = 0.9

DMP1018UCB9

R (t) = r(t) * R



JA JA

R = 70°C/W



JA

Duty Cycle, D = t1/ t2

Dim Min Max Typ

A2 - 0.36 0.36
A3 0.020 0.030 0.025

U-WLB1515-9

A - 0.62 -

b 0.27 0.37 0.32
D 1.47 1.51 1.49
E 1.47 1.51 1.49
e - - 0.50

All Dimensions in mm

Value

(in mm)

C1

Dimensions

C

C

C 0.50
C1 1.00
C2 1.00

D 0.25

C2

DMP1018UCB9

Document number: DS36149 Rev. 2 - 2

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June 2013

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

ADVANCE INFORMATION

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2013, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMP1018UCB9

DMP1018UCB9

Document number: DS36149 Rev. 2 - 2

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June 2013

© Diodes Incorporated