Diodes DMP1018UCB9 User Manual

Product Summary

V

R

(BR)DSS

-12V

18m @ V

DS(ON)

GS

= -4.5V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

switching performance, making it ideal for high efficiency power

management applications.

) and yet maintain superior

DS(ON)

Applications

 Battery Management

 Load Switch

 Battery Protection

ADVANCE INFORMATION

ESD PROTECTED TO 3kV

Features

I

D

-7.6 A

 Low Qg & Qgd

 Small Footprint 1.5-mm × 1.5-mm

 Gate ESD Protection 3kV

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: U-WLB1515-9

 Terminal Connections: See Diagram Below

S

GS

SS

S

DD

D

Top-View

Pin Configuration

DMP1018UCB9

P-CHANNEL ENHANCEMENT MODE MOSFET

Gate

Source

Drain

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMP1018UCB9-7 U-WLB1515-9 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2012 2013 2014 2015 2016 2017 2018

Code Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

EW

YM

EW = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)

DMP1018UCB9

Document number: DS36149 Rev. 2 - 2

1 of 6

www.diodes.com

June 2013

© Diodes Incorporated

)

r

r

g

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -4.5V

Continuous Drain Current (Note 6) VGS = -4.5V

Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range

ADVANCE INFORMATION

Steady

State

Steady

State

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

T

= +70°C

A

P

P
R
R

T

J, TSTG

DMP1018UCB9

V

DSS

V

GSS

I

D

I

D

I

DM

D

D

Θ

JA

Θ

JA

-55 to +150 °C

-12 V

-6 V

-7.6

-6.0

-5.5

-4.3

A

A

-60 A

1.0 W

1.8 W

126.8 °C/W
69 °C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @TC = +25°C I
Gate-Source Leakage

BV

I

DSS

DSS

GSS

-12 - - V

- - -1 μA

- - -100 nA

VGS = 0V, ID = -250μA
VDS = -9.6V, VGS = 0V
VGS = -6V, VDS = 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 6)
Reverse Recovery Charge
Reverse Recovery Time

V

GS(th

R

DS (ON)

|Y
V

fs

SD

Q

r

t

r

-0.4 -0.8 -1.3 V

-

|

- 5.5 - S

- -0.7 -1 V

-

-

12 18
15 22

30.2

71.4

- nC

- ns

VDS = VGS, ID = -250μA
V

= -4.5V, ID = -2A

m

GS

V

= -2.5V, ID = -2A

GS

VDS = -6V, ID = -2A
VGS = 0V, IS = -2A

= -5V, IF = -2A,

V

dd

di/dt = 200A/µs

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR4 material with 1-inch

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

2

(6.45-cm2), 2-oz. (0.071-mm thick) Cu

DMP1018UCB9

Document number: DS36149 Rev. 2 - 2

C

iss

C

oss

C

rss

R

G

Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

www.diodes.com

-

-

-

-

-

-

-

-

-

-

2 of 6

457 ­272 ­120 -

21.23 -

4.9 -

0.6

1.1

4.45

12.0
100

93

- nC

- nC

- ns

- ns

- ns

- ns

pF
pF
pF

= -6V, VGS = 0V,

V

DS

f = 1.0MHz

 VDS = 0V, VGS = 0V, f = 1.0MHz

nC

= -4.5V, VDS = -6V,

V

GS

= -2A

I

D

V

= -6V, VGS = -4.5V,

DD

I

= -2A, RG = 2,

DS

June 2013

© Diodes Incorporated