Diodes DMN66D0LW User Manual
M
DMN66D0LW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ESD PROTECTED, 1KV
TOP VIEW
Mechanical Data
Case: SOT323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
SOT323
Drain
D
Gate
Gate
Protection
Diode
EQUIVALENT CIRCUIT
Source
G
TOP VIEW
S
Ordering Information (Note 4)
Part Number Case Packaging
DMN66D0LW-7 SOT323 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
MN1
Chengdu A/T Site
YM
MN1
Shanghai A/T Site
MN1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
YM
Y
Y or = Year (ex: A = 2013)
Y
M = Month (ex: 9 = September)
e3
DMN66D0LW
Document number: DS31483 Rev. 2 - 2
1 of 5
www.diodes.com
September 2013
© Diodes Incorporated
DMN66D0LW
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage (Note 5) Continuous
Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed
V
DSS
V
GSS
I
D
60 V
±20 V
115
73
800
Thermal Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation
NEW PRODUCT
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
P
R
T
J, TSTG
D
JA
200 mW
625 °C/W
-55 to +150 °C
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C
Gate-Body Leakage
BV
I
I
DSS
GSS
60 70
DSS
1.0
500
±5
V
µA
µA
V
= 0V, ID = 10µA
GS
V
= 60V, V
DS
V
±20V, V
GS =
GS
DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C
Forward Transconductance
V
R
DS(ON)
GS(th)
g
1.2
3.5
FS
3.0
80
2.0 V
6
5
Ω
mS
V
= VGS, ID = 250A
DS
= 5.0V, ID = 0.115A
V
GS
V
= 10V, ID = 0.115A
GS
V
= 10V, ID = 0.115A
DS
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
23
3.4
1.4
pF
pF
pF
V
= 25V, VGS = 0V, f = 1.0MHz
DS
SWITCHING CHARACTERISTICS(Note 7)
Turn-On Delay Time
Turn-Off Delay Time
Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
t
D(ON)
t
D(OFF)
10
33
ns
ns
= 30V, ID = 0.115A, RL = 150,
V
DD
V
= 10V, R
GEN
GEN
DMN66D0LW
Document number: DS31483 Rev. 2 - 2
2 of 5
www.diodes.com
mA
= 0V
= 0V
= 25
September 2013
© Diodes Incorporated
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