Diodes DMN66D0LT User Manual

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Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate, 1KV (HBM)

• Lead Free/RoHS Compliant (Note 2)

UCT NEW PROD

• Qualified to AEC-Q101 Standards for High Reliability

Maximum Ratings @T

Drain-Source Voltage
Gate-Source Voltage (Note 1) Continuous
Drain Current (Note 1) Continuous

Continuous @ 100°C
Pulsed

ESD PROTECTED, 1KV

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

TOP VIEW

DMN66D0LT

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT-523

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.002 grams (approximate)

SOT-523

Gate

V

DSS

V

GSS

I

D

Drain

Gate
Protection
Diode

EQUIVALENT CIRCUIT

Source

D

G

TOP VIEW

S

60 V
±20 V
115

73
800

mA

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @ TC = 25°C

Gate-Body Leakage

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time
Turn-Off Delay Time

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

3. Short duration pulse test used to minimize self-heating effect.

can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

DMN66D0LT

Document number: DS31530 Rev. 2 - 2

@ TC = 125°C

@ TJ = 125°C

P

D

R

JA

θ

T

J, TSTG

BV

DSS

⎯ ⎯

I

DSS

I

⎯ ⎯

GSS

V

GS(th)

R

⎯

DS (ON)

g

FS

C

⎯

iss

C

⎯

oss

C

⎯

rss

t

⎯

D(ON)

t

⎯

D(OFF)

1.2

1 of 4

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60 70

⎯

3.5

3.0 6 5

80

⎯ ⎯

23

3.4

1.4

10
33

200 mW
625 °C/W

-55 to +150 °C

V

⎯

1.0

500

±5

2.0 V

⎯
⎯
⎯

⎯
⎯

µA

μA

Ω

mS

pF
pF
pF

ns
ns

V

= 0V, ID = 10μA

GS

V

= 60V, V

DS

±20V, V

V

GS =

V

= VGS, ID = 250μA

DS

V

= 5.0V, ID = 0.115A Static Drain-Source On-Resistance @ TJ = 25°C

GS

V

= 10V, ID = 0.115A

GS

V

= 10V, ID = 0.115A

DS

V

= 25V, VGS = 0V, f = 1.0MHz

DS

V

= 30V, ID = 0.115A, RL = 150Ω,

DD

= 10V, R

V

GEN

GS

DS

GEN

= 0V

= 0V

= 25Ω

September 2008

© Diodes Incorporated

R

CUR

RENT

C, C

PACITANC

F

NEW PRODUCT

DMN66D0LT

0.6

0.5

0.4

0.3

0.2

0.1

0

9

1

V = 5V

DS

Pulsed

(A)

0.1

AIN

D

I, D

0.01

T = 150°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

1234

V , GATE SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

2.5

5

8

2.0

7

Ω

6

1.5

5

V = 5V

4

ON-RESISTANCE ( )

3

DS(ON)

R , STATIC DRAIN-SOURCE

2

GS

V = 10V

GS

1

0 0.1 0.2 0.3 0.4 0.5 0.6

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 On-Resistance vs. Drain Current & Gate Voltage

2.0

1.9

1.8

I = 250µA

D

1.7

1.6

1.5

1.4

1.3

1.2

1.0

0.5

0

100

)
E (p

C

iss

10

A

T

C

oss

1.1

GS(TH)

V , GATE THRESHOLD VOLTAG E (V)

1.0

-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)

Fig. 5 Gat e Threshold V ariation vs. Ambien t Temperature

A

1

0 5 10 15 20 25 30 35 40

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 6 Typical Total Capacitance

C

rss

DMN66D0LT

Document number: DS31530 Rev. 2 - 2

2 of 4

www.diodes.com

September 2008

© Diodes Incorporated