Diodes DMN66D0LDW User Manual

Product Summary

Package

SOT363

V

(BR)DSS

60V

R

6Ω @ V

5Ω @ VGS = 10V

DS(ON)

GS

= 5V

Description

This new generation MOSFET has been designed to minimize the

on-state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

NEW PRODUCT

• Load Switch

ESD PROTECTED TO 1kV

I

D

TA = +25°C

90mA

115mA

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate, 1KV (HBM)

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

SOT363

Top View

Internal Schematic

D

2

S

2

Top View

DMN66D0LDW

e3

S

G

1

1

D

G

1

2

Ordering Information (Note 4)

Part Number Case Packaging

DMN66D0LDW-7 SOT363 3,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MN1

YM

YM

MN1

MN1

YM

YM

MN1

MN1= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

DMN66D0LDW

Document number: DS31232 Rev. 6 - 2

1 of 5

www.diodes.com

February 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage (Note 5) Continuous

Drain Current (Note 5) Continuous
Continuous @ +100°C
Pulsed

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation

NEW PRODUCT

Derating above T

= +25°C (Note 5)

A

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

V

V

P

R

T

J, TSTG

DSS

GSS

I

D

D

JA

θ

DMN66D0LDW

60 V

±20 V

115

73

mA

800

250

1.6

mW

mW/°C

500 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current @ TC = +25°C

@ TC = +125°C

Gate-Body Leakage

BV

I

DSS

I

GSS

60 70

DSS

⎯ ⎯

⎯ ⎯

⎯

1.0

500

±5

V

µA

μA

V

= 0V, ID = 10µA

GS

V

= 60V, V

DS

V

±20V, V

GS =

GS

DS

= 0V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance @ TJ = +25°C

@ TJ = +125°C

Forward Transconductance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

g

V

FS

SD

1.2

⎯

80

⎯

⎯

3.5

3.0

VSD

0.8 1.2 V

2.0 V

6
5

⎯

Ω

mS

V

V

V

V

VGS = 0V, IS = 115mA

= VGS, ID = 250μA

DS

= 5.0V, ID = 0.115A

GS

= 10V, ID = 0.115A

GS

= 10V, ID = 0.115

DS

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

iss

C

oss

C

rss

⎯

⎯

⎯

23

3.4

1.4

⎯

⎯

⎯

pF

pF

pF

= 25V, VGS = 0V, f = 1.0MHz

V

DS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Turn-Off Delay Time

Notes: 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which

can be found on our website at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

t

D(ON)

t

D(OFF)

⎯

⎯

10

33

⎯

⎯

ns

ns

= 30V, ID = 0.115A, RL = 150Ω,

V

DD

V

GEN

= 10V, R

GEN

= 25Ω

DMN66D0LDW

Document number: DS31232 Rev. 6 - 2

2 of 5

www.diodes.com

February 2014

© Diodes Incorporated