Diodes DMN65D8LFB User Manual

n

Product Summary

V

R

(BR)DSS

3.0 @ V

60V

4.0 @ VGS = 5V

DS(ON)

GS

= 10V

Description and Applications

These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching

performance.These products are particularly suited for low voltage,
low current applications such as small

• Load switching

NEW PRODUCT

.

ESD PROTECTED TO 1.2kV

X1-DFN1006-3

Bottom View

I

D

TA = 25°C

400mA

330mA

DMN65D8LFB

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Features and Benefits

• N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate, 1.2kV HBM

• Lead, Halogen and Antimony Free, RoHS Compliant

• "Green" Device (Notes 1 and 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drai

Body

Source

Diode

S

D

G

Top View

Pin Configuration

Gate

Gate
Protection
Diode

Equivalent Circuit

Ordering Information (Note 3)

Part Number Case Packaging

DMN65D8LFB-7 X1-DFN1006-3 3,000/Tape & Reel

DMN65D8LFB-7B X1-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

ate Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN65D8LFB-7

X1

Top View

Dot Denotes Drain Side

Bar Denotes Gate and Source Side

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

DMN65D8LFB-7B

X1

Top View

1 of 5

www.diodes.com

X1 = Product Type Marking Code

November 2011

© Diodes Incorporated

θ

θ

)

)

r

)

Maximum Ratings

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

Steady

State

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

V

DSS

V

GSS

I

D

I

D

60 V
±20
260

210
400

310

Thermal Characteristics

Characteristic Symbol Value Units

Power Dissipation, @TA = 25°C (Note 4) PD
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation, @TA = 25°C (Note 5) PD
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)

NEW PRODUCT

Operating and Storage Temperature Range

R

JA

R

JSA

T

, T

J

STG

430 mW
290
840 mW
147

-55 to +150

DMN65D8LFB

V

mA

mA

°C/W

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Body Leakage

BV

DSS

I

GSS

DSS

60 - - V

- - 0.1 µA

- -

±10

µA

VGS = 0V, ID = 250μA
V

= 60V, VGS = 0V

DS

VGS = ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

1.2 - 2.0 V

-

-

3.0

4.0

80 320 - mS

- 0.7 1.2 V

Ω

VDS = VGS, ID = 250μA
V

= 10V, ID = 0.115A

GS

V

= 5V, ID = 0.1115A

GS

VDS = 10V, ID = 0.115A
VGS = 0V, IS = 0.115A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

C
C
C

t

t

iss
oss
rss

D(on

t

D(off

t

f

- 25 - pF

- 4.7 - pF

V

- 2.5 - pF

- 3.27 - ns

- 3.15 - ns

- 12.025 - ns

V
R

- 6.29 - ns

= 25V, V

DS

= 30V, V

DD

GEN

GS

GEN

= 25,ID = 0.115A

= 0V, f = 1.0MHz

= 10V,

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

2 of 5

www.diodes.com

November 2011

© Diodes Incorporated