Diodes DMN65D8LFB User Manual

n

Product Summary

V

R

(BR)DSS

3.0 @ V

60V

4.0 @ VGS = 5V

DS(ON)

GS

= 10V

Description and Applications

These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching

performance.These products are particularly suited for low voltage,
low current applications such as small

• Load switching

NEW PRODUCT

.

ESD PROTECTED TO 1.2kV

X1-DFN1006-3

Bottom View

I

D

TA = 25°C

400mA

330mA

DMN65D8LFB

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Features and Benefits

• N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate, 1.2kV HBM

• Lead, Halogen and Antimony Free, RoHS Compliant

• "Green" Device (Notes 1 and 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drai

Body

Source

Diode

S

D

G

Top View

Pin Configuration

Gate

Gate
Protection
Diode

Equivalent Circuit

Ordering Information (Note 3)

Part Number Case Packaging

DMN65D8LFB-7 X1-DFN1006-3 3,000/Tape & Reel

DMN65D8LFB-7B X1-DFN1006-3 10,000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

ate Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN65D8LFB-7

X1

Top View

Dot Denotes Drain Side

Bar Denotes Gate and Source Side

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

DMN65D8LFB-7B

X1

Top View

1 of 5

www.diodes.com

X1 = Product Type Marking Code

November 2011

© Diodes Incorporated

θ

θ

)

)

r

)

Maximum Ratings

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 4) VGS = 10V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

Steady

State

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

V

DSS

V

GSS

I

D

I

D

60 V
±20
260

210
400

310

Thermal Characteristics

Characteristic Symbol Value Units

Power Dissipation, @TA = 25°C (Note 4) PD
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation, @TA = 25°C (Note 5) PD
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)

NEW PRODUCT

Operating and Storage Temperature Range

R

JA

R

JSA

T

, T

J

STG

430 mW
290
840 mW
147

-55 to +150

DMN65D8LFB

V

mA

mA

°C/W

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Body Leakage

BV

DSS

I

GSS

DSS

60 - - V

- - 0.1 µA

- -

±10

µA

VGS = 0V, ID = 250μA
V

= 60V, VGS = 0V

DS

VGS = ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

|

fs

1.2 - 2.0 V

-

-

3.0

4.0

80 320 - mS

- 0.7 1.2 V

Ω

VDS = VGS, ID = 250μA
V

= 10V, ID = 0.115A

GS

V

= 5V, ID = 0.1115A

GS

VDS = 10V, ID = 0.115A
VGS = 0V, IS = 0.115A

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

C
C
C

t

t

iss
oss
rss

D(on

t

D(off

t

f

- 25 - pF

- 4.7 - pF

V

- 2.5 - pF

- 3.27 - ns

- 3.15 - ns

- 12.025 - ns

V
R

- 6.29 - ns

= 25V, V

DS

= 30V, V

DD

GEN

GS

GEN

= 25,ID = 0.115A

= 0V, f = 1.0MHz

= 10V,

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

2 of 5

www.diodes.com

November 2011

© Diodes Incorporated

R

R

OUR

CE ON-R

TANC

G

R

O

O

G

C

UNC

T

O

C

PAC

TANC

p

F

NEW PRODUCT

DMN65D8LFB

0.6

0.5

0.4

0.3

0.2

V =10V

GS

V =5.0V

GS

V =4.0V

GS

V =4.5V

GS

V =3.5V

GS

V =3.0V

GS

V =2.5V

GS

D

I , DRAIN CURRENT (A)

1

0.1

V= 5.0V

DS

T=25C

A

T=85C

°

A

°

T =125 C

A

T=-55C

A

°

T =150 C

A

°

°

0.1

0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig.1 Typical Output Characteristics

5

0.01
0 0.5 1 1.5 2 2.5 3 3.5 4

V , GATE-SOURCE VOLTAGE

GS

Fig. 2 Typical Transfer Characteristics

2.4

Ω

4.5

E ( )

4

3.5

ESIS

3

V=5V

GS

2.5

V =10V

2

1.5

AIN-S

1

, D

0.5

DS(ON)

0

0 0.1 0.2 0.3 0.4 0.5 0.6

I , DRAIN-SOURCE CURRENT (A)

D

GS

Fig. 3 Typical On-Resistance vs.
Drain Curr ent and G at e C harge

2

1.8

E (V)

1.6

I =250µA

D

I=1mA

D

LTA

LD V

ESH

1.4

1.2
1

0.8

0.6

ATE TH

0.4

GS(TH)

0.2

V,

0

-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)

Fig. 5 Gat e Threshold V ariation vs. Ambient Temperature

2.2
2

1.8

1.6

1.4

1.2

(Normalized)

1

0.8

0.6

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPER ATURE ( C)

Fig. 4 On-Resistance Variation with Temperature

50
45

)

40

E (

35

I

30
25

A
N

20

I

15
10

, J

T

5
0

0 5 10 15 20 25

V , DRAIN-SOURCE VOLTAGE

DS

Fig. 6 Typical Junction Capac it ance

V =10V,

GS

I =115mA

D

V=5V,

GS

I =115mA

D

°

f=1MHz

C

ISS

C

OSS

C

RSS

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

3 of 5

www.diodes.com

November 2011

© Diodes Incorporated

NEW PRODUCT

1

0.1

0.01

S

I , SOURCE CURRENT (A)

0.001
0 0.2 0.4 0.6 0.8 1 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 7 Diode Forward Voltage vs. Current

T =85°C

Package Outline Dimensions

A

A1

b2

E

Suggested Pad Layout

X

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

T =125°C

T =150°C

A

A

L2

X

1

G2

DMN65D8LFB

A

T =25°C

A

T =-55°C

A

X1-DFN1006-3

Dim Min Max Typ

A 0.47 0.53 0.50

D

b1

e

L1L3

C

Dimensions Value (in mm)

G1

Y

Z

4 of 5

www.diodes.com

A1 0 0.05 0.03

b1 0.10 0.20 0.15
b2 0.45 0.55 0.50

D 0.95 1.075 1.00
E 0.55 0.675 0.60
e

⎯ ⎯

L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3

⎯ ⎯

All Dimensions in mm

Z 1.1
G1 0.3
G2 0.2

X 0.7

X1 0.25

Y 0.4
C 0.7

0.35

0.40

November 2011

© Diodes Incorporated

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN65D8LFB

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

5 of 5

www.diodes.com

November 2011

© Diodes Incorporated