Diodes DMN65D8LDW User Manual

Product Summary

V

R

(BR)DSS

60V

8Ω @ V

6Ω @ VGS = 10V

Package

DS(ON)

= 5V

GS

SOT363

Description

This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management
applications.

Applications

NEW PRODUCT

 DC-DC Converters
 Power Management Functions
 Battery Operated Systems and Solid-State Relays
 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

) and yet maintain superior switching

DS(on)

ESD PROTECTED TO 1kV

I

D

TA = +25°C

170mA

200mA

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Dual N-Channel MOSFET
 Low On-Resistance
 Low Gate Threshold Voltage
 Low Input Capacitance
 Fast Switching Speed
 Small Surface Mount Package
 ESD Protected Gate, 1KV (HBM)
 Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT363
 Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminals: Solderable per MIL-STD-202, Method 208
 Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

 Terminal Connections: See Diagram
 Weight: 0.006 grams (approximate)

D

SOT363

Top View Top View

G

2

1

S

G

2

2

Internal Schematic

DMN65D8LDW

e3

S

1

D

1

Ordering Information (Note 4)

Part Number Case Packaging

DMN65D8LDW-7 SOT363 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018

Code U V W X Y Z A B C D E F

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MM1 YM

MM1 YM

MM1 YM

MM1 YM

DMN65D8LDW

Document number: DS35500 Rev. 6 - 2

MM1= Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

January 2014

© Diodes Incorporated

)





g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) V

Continuous Drain Current (Note 5) V

Continuous Drain Current (Note 6) V

Continuous Drain Current (Note 6) V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

NEW PRODUCT

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

DMN65D8LDW

Characteristic Symbol Value Units

60 V
±20 V

180
140

150
120

200
160

170
140

mA

mA

mA

mA

800 mA

=10V

GS

5V

GS =

10V

GS =

5V

GS =

Steady

State

Steady

State

Steady

State

Steady

State

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

T

= +70°C

A

= +25°C

T

A

= +70°C

T

A

= +25°C

T

A

= +70°C

T

A

P

D

R

θJA

P

D

R

θJA

R

θJC

T

J, TSTG

V

DSS

V

GSS

I

D

I

D

I

D

I

D

I

DM

300 mW
435 °C/W
400 mW
330 °C/W
139 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

DSS

60

 

 

 

V

1.0 µA

±5.0 µA

V

= 0V, ID = 250µA

GS

V

= 60V, V

DS

V

±20V, V

GS =

GS

DS

= 0V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage

V

GS(th

R

DS (ON)

g

V

FS

SD

1.0

 

 

80
— 0.8



2.0 V

8 Ω

6 Ω

 

1.2

mS

V

V

= VGS, ID = 250µA

DS

V

= 5.0V, ID = 0.115A

GS

V

= 10.0V, ID = 0.115A

GS

V

= 10V, ID = 0.115A

DS

V

= 0V, IS = 115mA

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C



iss

C

oss

C

rss

R

G





Total Gate Charge VGS = 10V Qg 
Total Gate Charge VGS = 4.5V Qg 
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q



s

Q

d

t

D(on

t



t



D(off

t



f




22.0

3.2

2.0

79.9

0.87

0.43

0.11

0.11

3.3

3.2

12.0

6.3














pF

V

= 25V, VGS = 0V, f = 1.0MHz

DS

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

= 10V, VDS = 30V,

V

GS

nC

= 150mA

I

D

= 30V, ID = 0.115A, V

V

DD

nS

R

= 25Ω

GEN

GEN

= 10V

,

DMN65D8LDW

Document number: DS35500 Rev. 6 - 2

2 of 6

www.diodes.com

January 2014

© Diodes Incorporated