Diodes DMN65D8L User Manual

Product Summary

I

V

R

(BR)DSS

60V

3Ω @ V

4Ω @ VGS = 5V

Package

DS(ON)

= 10V

GS

SOT23

D

TA = +25°C

310mA
270mA

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

• DC-DC Converters

• Power Management Functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

SOT23

DMN65D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

D

Gate

Drain

e3

ESD PROTECTED TO 1kV

Top View

G

Top View

Pin Configuration

S

Gate
Protection
Diode

Equivalent Circuit

Source

Ordering Information (Note 4)

Part Number Case Packaging

DMN65D8L-7 SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN65D8L

Document number: DS35923 Rev. 2 - 2

MM6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

August 2012

© Diodes Incorporated

θ

)

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Continuous Drain Current (Note 6) VGS = 5V
Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Maximum Body Diode Continuous Current (Note 5)

Thermal Characteristics

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Steady

State

Steady

State

V

DSS

V

GSS

T

= +25°C

A

= +70°C

T

A

T

= +25°C

A

T

= +70°C

A

(Note 6)
(Note 5) 540
(Note 6)
(Note 5) 241
(Note 5)

P

R
R

T

J, TSTG

I

D

I

D

I

DM

I

S

D

JA

θ

JC

370

348

91

-55 to +150 °C

DMN65D8L

60 V
±20 V
310

240
270

210
800 mA
500 mA

mA

mA

mW

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I
I

GSS

DSS

DSS

60

⎯ ⎯
⎯ ⎯
⎯ ⎯

V

1.0 µA
±5 µA

V

= 0V, ID = 250µA

GS

V

= 60V, V

DS

V

±20V, V

GS =

GS

DS

= 0V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance

Diode Forward Voltage

V

GS(th

R

DS (ON)

g

V

FS
SD

1.2

⎯

⎯

⎯

2 3

2.5 4

80 290

0.8

⎯

2.0 V

Ω V
Ω V

mS

⎯

1.2

V

V

= VGS, ID = 250µA

DS

= 10V, ID = 0.115A

GS

= 5V, ID = 0.115A

GS

V

= 10V, ID = 0.115A

DS

= 0V, IS = 115mA

V

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge VGS = 10V Qg
Total Gate Charge VGS = 4.5V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing

.

Q
Q

t

D(on

t

D(off

s
d

t

t

f

⎯
⎯
⎯

⎯

⎯

⎯

⎯
⎯
⎯
⎯

⎯

⎯

22.0

3.2

2.0

79.9

0.87

0.43

0.11

0.11

2.7

2.8

12.6

7.3

⎯

pF

⎯
⎯
⎯ Ω
⎯

⎯

nC

⎯
⎯
⎯
⎯

nS

⎯

⎯

= 25V, VGS = 0V, f = 1.0MHz

V

DS

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 10V, VDS = 30V,

GS

I

= 150mA

D

V

= 30V, ID = 0.115A, V

DD

R

= 25Ω

GEN

GEN

= 10V

,

DMN65D8L

Document number: DS35923 Rev. 2 - 2

2 of 6

www.diodes.com

August 2012

© Diodes Incorporated

R

CUR

RENT

RAIN CUR

REN

T

R

R

OUR

ON-R

R

RAIN-SOUR

C

R

R

OUR

C

O

R

TANC

G

T

THR

H

O

OLTAG

0.6

1

V = 5.0VDS

DMN65D8L

0.5

(A)

0.4

0.3

AIN

0.2

D

I, D

0.1

0

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. Typical Output Characteristic

5.0

Ω

4.5

4.0

3.5

ESISTANCE ( )

CE

AIN-S
, D

3.0

2.5

2.0

1.5

1.0

V= 5V

GS

V = 10V

GS

0.5

DS(ON)

0

0 0.1 0.2 0.3 0.4 0.5 0.6

I , DRAIN CURRENT

D

Figure 3 . Typical On-Resistance vs .

Drain Curr ent and Temperature

5

Ω

E ( )

4

ESIS
N-

3

V= 5V

GS

I= 115mA

D

E

2

V=V

10

GS

I= 115mA

D

AIN-S

1

, D

DS(ON)

0

- 50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 5. On-Resistance Variation with Temperature

DMN65D8L

Document number: DS35923 Rev. 2 - 2

3 of 6

www.diodes.com

(A)

0.1

D

I, D

0.01
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V , GATE-SOURCE VOLTAGE

GS

Figure 2. Typ ical Tr ansfer Ch ar acteristics

2.4

2.2

2.0

E

1.8

V=V

10

GS

I = 115mA

D

1.6

V=5V

GS

I = 115mA

D

, D

1.4

1.2

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6

0.4
50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 4. On-Resistance Variation with Temperature

2.0

1.8

E (V)

1.6

I= 1mA

D

LD V

ES

1.4

1.2

1.0

I = 250µA

D

0.8

E

0.6

A

0.4

GS(th)

0.2

V,

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6. Gate Threshold Variation vs. Ambient Temperature

August 2012

© Diodes Incorporated

OUR

C

C

U

R

R

N

T

R

N

GE CUR

R

N

T

C

UNC

TION CAPACITANC

1

1,000

DMN65D8L

(nA)

(V)

0.1

E

T = 150°C

A

E

0.01

S

I, S

0.001
0 0.2 0.4 0.6 0.8 1.0 1.2

T = 125°C

A

T= 25°C

T = -55°C

A

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 7. Diode Forward Voltage vs. Current

50
45

f = 1MHz

T= 85°C

A

A

E

100

LEAKA

10

AI

T = -55°C

DSS

I, D

1

01020304050

V , DRAIN-SOURCE VOLTAGE (V)

DS

T = 25°C

A

A

T = 150°C

A

T = 125°C

A

T = 85°C

A

Figure 8. Typical Drain-Source Leakage Current vs. Voltage

40

E (pF)

35
30
25
20
15

, J

10

T

5
0

0 5 10 15 20 25

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9. Typical Junction Capacitance

C

iss

C

oss

C

rss

DMN65D8L

Document number: DS35923 Rev. 2 - 2

4 of 6

www.diodes.com

August 2012

© Diodes Incorporated

Package Outline Dimensions

A

K

J

H

F

G

B

K1

D

Suggested Pad Layout

Y

Z

X

DMN65D8L

Dim Min Max Typ

A 0.37 0.51 0.40
B 1.20 1.40 1.30

C

M

L

C

E

C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00

K1 - - 0.400

L 0.45 0.61 0.55
M 0.085 0.18 0.11

α

Dimensions Value (in mm)

Z 2.9
X 0.8
Y 0.9

C

E

SOT23

0° 8° -

All Dimensions in mm

2.0

1.35

DMN65D8L

Document number: DS35923 Rev. 2 - 2

5 of 6

www.diodes.com

August 2012

© Diodes Incorporated

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

DMN65D8L

DMN65D8L

Document number: DS35923 Rev. 2 - 2

6 of 6

www.diodes.com

August 2012

© Diodes Incorporated