Diodes DMN63D8LV User Manual

V

Product Summary

V

R

(BR)DSS

30V

4.2Ω @ V

2.8Ω @ VGS = 10V

DS(ON)

GS

= 5V

Description

This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

NEW PRODUCT

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

ESD PROTECTED

I

D

TA = 25°C

200mA
260mA

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT563

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

D

SOT563

Top View Top View

G

2

1

S

G

2

2

Internal Schematic

DMN63D8L

S

1

D

1

Ordering Information (Note 4)

Part Number Case Packaging

DMN63D8LV-7 SOT563 3,000/Tape & Reel

DMN63D8LV-13 SOT563 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

3D8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)

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V

θ

)

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) V

Continuous Drain Current (Note 5) V

=10V

GS

5V

GS =

Steady

Steady

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

NEW PRODUCT

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

State

State

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

P

R

T

J, TSTG

DMN63D8L

V

DSS

V

GSS

I

D

I

D

I

DM

D
JA

-55 to 150 °C

30 V
±20 V
260

200
220

160

mA

mA

800 mA

450 mW
281 °C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

30

DSS

⎯ ⎯
⎯ ⎯

⎯ ⎯

1.0 µA

±10.0

V

μA

V

= 0V, ID = 250μA

GS

V

= 30V, V

DS

±20V, V

V

GS =

GS

DS

= 0V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage

V

GS(th

R

DS (ON)

g

V

FS
SD

0.8

⎯
⎯

⎯

⎯

⎯

80

- 0.8

1.5 V

⎯

2.8

⎯

3.8

⎯

4.2

⎯

4.5

⎯

13

⎯
⎯ ⎯

1.2 V

Ω

mS

V

= VGS, ID = 250μA

DS

V

= 10.0V, ID = 250mA

GS

= 5.0V, ID =250mA

V

GS

= 4.5V, ID =250mA

V

GS

= 4.0V, ID =250mA

V

GS

= 2.5V, ID =10mA

V

GS

V

= 10V, ID = 0.115A

DS

= 0V, IS = 115mA

V

GS

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

⎯

G

⎯
⎯

Total Gate Charge VGS = 10V Qg ⎯
Total Gate Charge VGS = 4.5V Qg ⎯
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

⎯

22.0

3.2

2.0

79.9

0.87

0.43

0.11

0.11

3.3

3.2

12.0

6.3

⎯

pF

V

⎯

= 25V, VGS = 0V, f = 1.0MHz

DS

⎯
⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯

⎯

⎯

nC

= 10V, VDS = 30V,

V

GS

I

= 150mA

D

⎯
⎯
⎯

⎯

nS

= 30V, ID = 0.115A, V

V

DD

R

= 25Ω

GEN

GEN

= 10V

⎯

,

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

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V

R

CUR

R

T

RAIN CUR

REN

T

R

R

OUR

ON-R

R

R

OUR

CE ON-R

TANC

R

R

OUR

O

R

R

RAIN

OUR

C

DMN63D8L

NEW PRODUCT

0.8

V = 10.0V

GS

0.7

V= 4.5V

GS

V= 4.0V

GS

V= 3.0V

GS

(A)
EN

0.6

0.5

0.4

AIN

0.3

D

I, D

0.2

0.1

0

012345

V , DRAIN-SOURCE VOLTAGE (V)

DS

V= 2.0V

GS

V= 2.5V

GS

Figure 1 Typical Output Char acteristic

5

Ω

0.6

V = 5.0VDS

0.5

(A)

0.4

0.3

T = 150°C

0.2

D

I, D

0.1

0

01 23 45

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 2 Typical Transfer Characteristi cs

5.0

Ω

E ( )

4.5

4

V = 2.5VGS

ESISTANCE ( )

3

V = 4.5VGS

CE

2

V = 10VGS

AIN-S

1

, D

DS(ON)

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

I , DRAIN-SOURCE CURRENT (A)

D

Figure 3 Typical On-Resistance vs.

Drain Curr ent and Gate V oltage

10

Ω

V = 4.5V

GS

8

ESISTANCE ( )
N-

6

T = 125°C

A

T = 150°C

A

4.0

ESIS

3.5

3.0

I = 250mA

2.5

AIN-S

2.0

, D

1.5

DS(ON)

1.0
0 5 10 15 20

D

I = 100mA

D

I= 10mA

D

V , GATE-SOURCE VOLTAGE (V)

GS

Figure 4 Typical Drain-Source On-Resistance

vs. G ate- S ource Voltage

1.6

V=V

5.0

GS

I = 300mA

D

1.4

E

1.2

-S

V = 4.0V

GS

I = 200mA

D

CE

4

AIN-S

2

, D

DS(ON)

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

I , DRAIN CURRENT (A)

D

T = 85°C

A

T = 25°C

A

T = -55°C

A

Figure 5 Typical On-Resistance vs.

Drain Curr ent and Tempera tu r e

, D

1.0

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figur e 6 On- R esista nce Variation with Temperature

°

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

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V

R

R

N

OUR

CE O

N

R

TAN

C

GATE THRESH

O

O

TAG

NEW PRODUCT

DMN63D8L

5.0

Ω

E ( )

4.5

4.0

ESIS

-

3.5

2.0

1.8

E (V)

L

1.6

I= 1mA

LD V

1.4

D

3.0

I = 250µA

D

°

2.5

V = 4.0V

-S
AI

2.0

GS

I = 200mA

D

, D

1.5

DS(ON)

1.0

V=V

5.0

GS

I = 300mA

D

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Figure 7 On-Resistance Variation with Temperature

0.8

1.2

1.0

0.8

GS(th)

V,

0.6

-50 -25 0 25 50 75 100 125 150

°

T , JUNCTION TEMPERATURE ( C)

J

Figure 8 Gate Threshold Variation vs. Ambient Temperature

0.7

0.6

0.5

T = 150°C

SD

A

T = 125°C

A

T= 85°C

A

T= 25°C

A

T = -55°C

A

0.4

0.3

0.2

S

I , SOURCE CURRENT (A)

0.1
0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

Figur e 9 Diode Forwa r d Voltage vs. Cur r e nt

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

NEW PRODUCT

K

D

G

H

B

C

M

L

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

G

Z

Y

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

X

C2

C2

C1

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Dim Min Max Typ

SOT563

A 0.15 0.30 0.20
B 1.10 1.25 1.20
C 1.55 1.70 1.60
D - - 0.50
G 0.90 1.10 1.00
H 1.50 1.70 1.60
K 0.55 0.60 0.60
L 0.10 0.30 0.20
M 0.10 0.18 0.11

All Dimensions in mm

Dimensions Value (in mm)

Z 2.2
G 1.2
X 0.375

Y 0.5
C1 1.7
C2 0.5

DMN63D8L

August 2012

© Diodes Incorporated

V

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

NEW PRODUCT

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2012, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN63D8L

DMN63D8LV

Document number: DS36022 Rev. 2 - 2

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