Diodes DMN63D8LDW User Manual

Product Summary

V

R

(BR)DSS

30V

4.2Ω @ V

2.8Ω @ VGS = 10V

DS(ON)

GS

= 4.5V

Description

This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

NEW PRODUCT

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

ESD PROTECTED

I

D

TA = 25°C

200mA
260mA

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Small Surface Mount Package

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT363

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.006 grams (approximate)

D

SOT363

Top View Top View

G

2

1

S

G

2

2

Internal Schematic

DMN63D8LDW

S

1

D

1

Ordering Information (Note 4)

Part Number Case Packaging

DMN63D8LDW-7 SOT363 3000/Tape & Reel

DMN63D8LDW-13 SOT363 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

MM4

YM

YM

MM4

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2

MM4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)

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www.diodes.com

November 2012

© Diodes Incorporated

θ

)

g

g

)

r

)

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) V

Continuous Drain Current (Note 6) V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

NEW PRODUCT

Total Power Dissipation

Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

Characteristic Symbol Value Units

DMN63D8LDW

Characteristic Symbol Value Units

30 V
±20 V
220

170
260

210

mA

mA

800 mA

300

mW

435

°C/W

139

= 10V

GS

10V

GS =

= +25°C, unless otherwise specified.)

A

Steady

State

Steady

State

(Note 5)
(Note 6) 400
(Note 5)
(Note 6) 330
(Note 6)

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

P

R
R

T

J, TSTG

V

DSS

V

GSS

I

D

I

D

I

DM

D

JA

θ

JC

-55 to 150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage

BV

I

DSS

I

GSS

30

DSS

⎯ ⎯
⎯ ⎯

⎯ ⎯

1.0 µA

±10.0

V

μA

V

= 0V, ID = 250μA

GS

V

= 30V, V

DS

±20V, V

V

GS =

GS

DS

= 0V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage

V

GS(th

R

DS (ON)

g

V

FS
SD

0.8

⎯
⎯

⎯

⎯

⎯

80

- 0.8

1.5 V

⎯

2.8

⎯

3.8

⎯

4.2

⎯

4.5

⎯

13

⎯
⎯ ⎯

1.2 V

Ω

mS

V

= VGS, ID = 250μA

DS

V

= 10.0V, ID = 250mA

GS

= 5V, ID = 250mA

V

GS

= 4.5V, ID =250mA

V

GS

= 4.0V, ID =250mA

V

GS

= 2.5V, ID =10mA

V

GS

V

= 10V, ID = 0.115A

DS

= 0V, IS = 115mA

V

GS

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

⎯

iss

C

oss

C

rss

R

⎯

G

⎯
⎯

Total Gate Charge VGS = 10V Qg ⎯
Total Gate Charge VGS = 4.5V Qg ⎯
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

Q

⎯

s

Q

⎯

d

t

⎯

D(on

t

⎯

t

⎯

D(off

t

⎯

f

22.0

⎯

3.2

2.0

79.9

0.87

0.43

0.11

0.11

3.3

3.2

12.0

6.3

⎯

pF

= 25V, VGS = 0V, f = 1.0MHz

V

DS

⎯
⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯

⎯

⎯

nC

= 10V, VDS = 30V,

V

GS

I

= 150mA

D

⎯
⎯
⎯

⎯

nS

= 30V, ID = 0.115A, V

V

DD

R

= 25Ω

GEN

⎯

GEN

= 10V

,

DMN63D8LDW

Document number: DS36021 Rev. 3 - 2

2 of 6

www.diodes.com

November 2012

© Diodes Incorporated