Diodes DMN62D1SFB User Manual

Product Summary

V

R

(BR)DSS

60V

1.4 @ V

1.6 @ VGS= 4.5V

DS(on)

Max

GS

@ T

= 10V

Description

This MOSFET has been designed to minimize the on-state resistance

(R

) and yet maintain superior switching performance, making it

DS(ON)

ideal for high efficiency power management applications.

Applications

 Load Switch

 Portable Applications

 Power Management Functions

ADVANCE INFORMATION

X1-DFN1006-3

Bottom View

I

Max

D

= +25°C

A

0.41A

0.38A

D

Top View

Internal Schematic

DMN62D1SFB

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Footprint of just 0.6mm2 – thirteen times smaller than SOT23

 Low On-Resistance

 Low Gate Threshold Voltage

 Fast Switching Speed

 Ultra-Small Surface Mount Package

 ESD Protected Gate 200V

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: X1-DFN1006-3

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – NiPdAu over Copper leadframe. Solderable

Drain

Source

e4

Body
Diode

per MIL-STD-202, Method 208

 Weight: 0.001 grams (approximate)

S

G

Gate

Gate
Protection
Diode

Equivalent Circuit

Ordering Information (Note 4)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN62D1SFB-7B NH 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN62D1SFB

Document number: DS35252 Rev. 3 - 2

DMN62D1SFB-7B

NH

Top View

Bar Denotes Gate

and Source Side

www.diodes.com

NH = Product Type Marking Code

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April 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5)

V

= 10V

GS

Pulsed Drain Current (Note 6)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @T

Operating and Storage Temperature Range

T

= +25°C

A

= +85°C

T

A

=+25°C R

A

DMN62D1SFB

V

DSS

V

GSS

I

D

I

DM

P

D

θJA

T

, T

J

STG

60 V

±20 V

0.41

0.30

A

2.64 A

0.47 W

258 °C/W

-55 to +150 °C

Electrical Characteristics (@T

ADVANCE INFORMATION

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

I

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

R

DS(ON)

|Y

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

C

C

C

Gate Resistance

Total Gate Charge

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

t

Turn-On Rise Time

Turn-Off Delay Time

t

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN62D1SFB

Document number: DS35252 Rev. 3 - 2

60 — — V

DSS

— —

DSS

— —

GSS

1.3 1.6 2.3 V

GS(th)

— —

100

|

fs

— 0.7 1.1 V

SD

— 40 80

iss

— 3.5 7

oss

— 2.8 5.6

rss

R

Q

Q

Q

gs

Q

gd

D(on)

t

r

D(off)

t

f

g

g

g

— 81.3 200

— 0.73 1.5

— 1.39 2.8

— 0.2 0.4

— 0.23 0.5

— 3.89 10

— 4.93 10

— 18.80 40

— 11.96 25

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100 nA

10

1

1.40

1.60

— —

VGS = 0V, ID = 250μA

VDS = 60V, VGS = 0V

V

= ±20V, VDS = 0V

μA

GS

= ±5V, VDS = 0V

V

GS

VDS = VGS, ID = 250μA

= 10V, ID = 40mA

V

Ω

mS

GS

V

= 4.5V, ID = 35mA

GS

VDS = 5V, ID = 40mA

VGS = 0V, IS = 300mA

pF

= 40V, VGS = 0V,

V

pF

pF

Ω

nC

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz

VGS = 4.5V

nC

nC

V

= 10V

GS

nC

ns

ns

ns

= 50V, I

V

DS

= 10V, RG = 6Ω

V

GS

ns

= 50V, ID = 1A

V

DS

= 1A

D

© Diodes Incorporated

April 2014