Diodes DMN62D0SFD User Manual

Product Summary

V

R

(BR)DSS

2Ω @ V

60V

3Ω @ VGS = 5V

DS(ON)

GS

= 10V

TA = 25°C

Description and Applications

This new generation MOSFET has been designed to minimize the on-state resistance (R performance, making it ideal for high efficiency power management

NEW PRODUCT

applications.

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Load switch

ESD PROTECTED TO 2kV

) and yet maintain superior switching

DS(on)

Top View Bottom View Equivalent Circuit Top view

I

D

540mA

430mA

DMN62D0SFD

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate to 2kV

• Lead Free/RoHS Compliant (Note 1)

• Green Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Terminals: Finish – NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.005 grams (approximate)

Drain

Body

Gate

Protection

Diode

D

Source

Pin-out

S

G

Ordering Information (Note 3)

Part Number Case Packaging

DMN62D0SFD-7 X1-DFN1212-3 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012

Code U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K62

YM

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

K62 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September)

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θ

)

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 5)

NEW PRODUCT

Thermal Characteristics @T

Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

DMN62D0SFD

Characteristic Symbol Value Units

V

DSS

V

GSS

T

Steady

State t<10s

Steady

State t<10s

= 25°C unless otherwise specified

A

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

P

Steady state

t<10s 182 °C/W

Steady state

t<10s 98 °C/W

R

P R R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

60 V ±20 V 540

430 630

500 430

340 510

410

mA

1.0 A

0.43 W 260 °C/W

0.89 W 140 °C/W

112 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C I Gate-Source Leakage

BV

DSS

I

GSS

DSS

60 - - V

- - 100 nA

- - 10 ON CHARACTERISTICS (Note 6) Gate Threshold Voltage

Static Drain-Source On-Resistance Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y V

fs

SD

1.0 1.6 2.5 V

- - 2

- - 3

|

- 130 - mS

- 0.8 1.2 V DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance

C

iss

C

oss

C

rss

R Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 10.0V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

Q Q

t

D(on

t

D(off

s d

t

f

- 30.2 -

- 4.4 -

- 2.8 -

- 131 -

- 0.39 -

- 0.87 -

- 0.14 -

- 0.09 -

- 3.95 -

- 3.81 -

- 16.0 -

- 9.04 -

VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V

μA

= ±20V, VDS = 0V

V

GS

VDS = 10V, ID = 1mA

= 10V, ID = 500mA

V

Ω

GS

V

= 5V, ID = 50mA

GS

VDS = 3V, ID = 30mA VGS = 0V, IS = 300mA

pF

V

= 25V, VGS = 0V,

pF pF

Ω

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz nC nC nC

= 10V, ID = 1A

V

DS

nC

ns ns ns

= 30V, I

V

DS

V

= 10V, RG = 25Ω

GS

D

ns

= 200mA

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

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RAIN C

URREN

T

UM FOR

R

CUR

R

T

R

OUR

ON-R

R

OUR

C

NEW PRODUCT

DMN62D0SFD

1

(A) EN

T = 150°C

(A)

D

I, D

Ω

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig.1 Typical Output Characteristic

V = 5.0V

GS

T = 125°C

A

T = 150°C

A

0.1

D WA

0.01

S

I, MAXIM

0.001

0.1 0.3 0.5 0.7 0.9 1.1 V , SOURCE-DRAIN VOLTAGE (V)

Ω

V = 10V

GS

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

SD

Fig. 2 Maximum Forward Current

vs. S o urce-Drain Voltage

T = 150°C

T = 125°C

A

T = 85°C

T = 25°C

T = -55°C

DS(ON)

R , DRAIN-SOURCE ON-RESISTANCE ( )

0 0.2 0.4 0.6 0.8 1.0

I , DRAIN CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Temperat ur e

V=V

E

GS

I = 300mA

D

AIN-S , D

A

10

V=V

10

GS

I = 150A

D

ESISTANCE ( )

T = 85°C

A

T = 25°C

CE

A

T = -55°C

A

AIN-S , D

DS(ON)

0 0.2 0.4 0.6 0.8 1.0

I , DRAIN CURRENT

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperat ur e

I= 1mA

D

DS(ON)

ON-RESISTANCE (NORMALIZED)

50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERA TURE ( C)

J

°

Fig. 5 On-Resistance Variation with Temperature

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

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GS(th)

V , GATE THRESHOLD VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 6 Gate Threshold V ariation vs. Ambient Temperature

January 2012

R

N

OUR

C

O

N-R

TAN

C

UNC

TION CAPAC

T

C

GATE THRESH

O

OLTAG

R

CUR

RENT

P

T

R

N

T

P

OWER

NEW PRODUCT

DMN62D0SFD

7

Ω

E ( )

6

5

ESIS

4

E

3

-S 2

AI , D

1

DS(ON)

0

04 8121620

I = 300mA

D

I = 150mA

D

I , DRAIN-SOURCE CURRENT

D

Fig. 7 Typica l O n-Resistance vs. Drain Current

10

V = 10V,

8

6

DS

I= A

250m

D

E (V)

LD V

4

60

50

E (pF)

40

AN I

30

C

iss

20

, J

T

10

0

0 5 10 15 20 25 30 35 40

C

oss

C

rss

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 8 Typical Junction Capacitance

R

DS(on)

Limited

DC

P = 10s

(A)

AIN

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

P = 10sWµ

f = 1MHz

D

I, D

0.1 1 10 100 V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 SOA, Safe Operation Area

GS

V

10

9 8

(W)

2

0

Q (nC)

, TOTAL GA T E CHARGE

g

Fig. 9 Gate Charge

Single Pulse

°

R = 261C/W

θ

JA

R = R * r

(t) (t)

θθ

JA JA

T -T = P * R

JAθJA(t)

7 6 5

SIE A

4 3

EAK ,

2

(pk)

1 0

0.001 0.01 0.1 1 10 100 1,000 t

, PULSE DURATION TIME (sec)

1

Fig. 11 Single Pulse Maximum Power Dissipation

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

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T

RAN

N

T T

HER

R

T

N

C

1

D = 0.9 D = 0.7

E

D = 0.5

A

D = 0.3

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

SIE

D = 0.005

r(t),

D = Single Pulse

NEW PRODUCT

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Package Outline Dimensions

A

E

Suggested Pad Layout

Y2

DMN62D0SFD

R = r * R

θ

JA(t) (t)

R = 261C/W

JA

Duty Cycle, D = t1/t2

t1, PULSE DURATION TIME (sec)

Fig. 12 Transient Thermal Resistance

A3

A1

D e

X1-DFN1212-3

Dim Min Max Typ

A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 - - 0.13

b 0.27 0.37 0.32 b1 0.17 0.27 0.22

b1

(2x)

D 1.15 1.25 1.20

E 1.15 1.25 1.20

e - - 0.80

L 0.25 0.35 0.30

L

b

X

Y

All Dimensions in mm

Dimensions Value (in mm)

C 0.80 X 0.42

Y1

(2x)

C

X1

(2x)

X1 0.32

Y 0.50 Y1 0.50 Y2 1.50

θθJA

°

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

NEW PRODUCT

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

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