Diodes DMN62D0SFD User Manual

Product Summary

V

R

(BR)DSS

2Ω @ V

60V

3Ω @ VGS = 5V

DS(ON)

GS

= 10V

TA = 25°C

Description and Applications

This new generation MOSFET has been designed to minimize the
on-state resistance (R
performance, making it ideal for high efficiency power management

NEW PRODUCT

applications.

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Load switch

ESD PROTECTED TO 2kV

) and yet maintain superior switching

DS(on)

Top View Bottom View Equivalent Circuit Top view

I

D

540mA

430mA

DMN62D0SFD

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate to 2kV

• Lead Free/RoHS Compliant (Note 1)

• Green Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Solderable per MIL-STD-202, Method 208

• Terminals: Finish – NiPdAu over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.005 grams (approximate)

Drain

Body

Gate

Gate

Protection

Diode

Diode

D

Source

Pin-out

S

G

Ordering Information (Note 3)

Part Number Case Packaging

DMN62D0SFD-7 X1-DFN1212-3 3000/Tape & Reel

Notes: 1. No purposefully added lead.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012

Code U V W X Y Z

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K62

YM

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

K62 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)

1 of 6

www.diodes.com

January 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

Maximum Ratings @T

= 25°C unless otherwise specified

A

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 5) VGS = 5V

Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)

NEW PRODUCT

Thermal Characteristics @T

Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)

Operating and Storage Temperature Range

DMN62D0SFD

Characteristic Symbol Value Units

V

DSS

V

GSS

T

Steady

State
t<10s

Steady

State
t<10s

= 25°C unless otherwise specified

A

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

= 25°C

T

A

= 70°C

T

A

I

D

I

D

I

D

I

D

I

DM

I

S

Characteristic Symbol Value Units

P

Steady state

t<10s 182 °C/W

Steady state

t<10s 98 °C/W

R

P
R
R

T

J, TSTG

D

JA

θ

D

JA

θ

JC

60 V
±20 V
540

430
630

500
430

340
510

410

mA

mA

mA

mA

1.0 A

1.0 A

0.43 W
260 °C/W

0.89 W
140 °C/W

112 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I
Gate-Source Leakage

BV

DSS

I

GSS

DSS

60 - - V

- - 100 nA

- - 10
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance
Forward Transfer Admittance

Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

1.0 1.6 2.5 V

- - 2

- - 3

|

- 130 - mS

- 0.8 1.2 V
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R
Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10.0V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

Q
Q

t

D(on

t

D(off

s
d

t

t

f

- 30.2 -

- 4.4 -

- 2.8 -

- 131 -

- 0.39 -

- 0.87 -

- 0.14 -

- 0.09 -

- 3.95 -

- 3.81 -

- 16.0 -

- 9.04 -

VGS = 0V, ID = 10μA
VDS = 60V, VGS = 0V

μA

= ±20V, VDS = 0V

V

GS

VDS = 10V, ID = 1mA

= 10V, ID = 500mA

V

Ω

GS

V

= 5V, ID = 50mA

GS

VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA

pF

V

= 25V, VGS = 0V,

pF
pF

Ω

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC

= 10V, ID = 1A

V

DS

nC

ns
ns
ns

= 30V, I

V

DS

V

= 10V, RG = 25Ω

GS

D

ns

= 200mA

DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

2 of 6

www.diodes.com

January 2012

© Diodes Incorporated