Diodes DMN62D0LFD User Manual

DMN62D0LFD

NEW PRODUCT

Product Summary

V

R

(BR)DSS

60V

2 @ V

2.5 @ VGS = 2.5V

DS(ON)

GS

= 4V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

NEW PRODUCT

ADVANCE INFORMATION

Memories, Transistors, etc.

ESD PROTECTED

Top View

I

D

310mA

295mA

Bottom View

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1212-3

• Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: NiPdAu over Copper leadframe. Solderable per MIL-

STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.005 grams (approximate)

G pin

D

Pin-Out Top View

e4

S

Gate

G

Gate
Protection
Diode

Equivalent Circuit

Ordering Information (Note 4)

N-CHANNEL ENHANCEMENT MODE MOSFET

Part Number Compliance Case Packaging

DMN62D0LFD-7 Standard X1-DFN1212-3 3,000/Tape & Reel

DMN62D0LFD-13 Standard X1-DFN1212-3 10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

K63

YM

DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

K63 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2013)
M = Month (ex: 9 = September)

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Drain

Body
Diode

Source

May 2014

© Diodes Incorporated

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source Voltage

Gate-Source Voltage

T

= +25°C

Continuous Drain Current (Note 5) VGS = 4.0V

A

= +70°C

T

A

Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R

Operating and Storage Temperature Range

NEW PRODUCT

Electrical Characteristics (@T

ADVANCE INFORMATION

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

Characteristic Symbol Min Typ Max Unit Test Condition

= +25°C, unless otherwise specified.)

A

BV

DSS

DSS

60

— —

— —

I

GSS

— —

— —

V

GS(th)

0.6 — 1.0 V

—

R

DS(ON)

—

—

—

|Y

V

C

C

C

R

Q

Q

Q

t

D(on)

t

D(off)

SD

iss

oss

rss

gd

t

t

|

fs

g

g

gs

r

f

—

—

—

—

—

—

—

—

—

—

—

—

—

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—

1.3 2

1.4 2.5

1.8 3

2.4

1.8

0.8 1.3 V

31

4.3

3.0

99

0.5

0.09

0.07

2.6

2.1

18

8.7

V

DSS

V

GSS

I

D

I

DM

P

D

JA

T

, T

J

STG

— V

1.0 A

±100 nA

±500 nA

±2.0 A

-55 to +150 °C

VGS = 0V, ID = 250A

VDS = 60V, VGS = 0V

V

V

V

VDS = VGS, ID = 250A

V

V



V

—

—

V

S

VDS = 10V, ID = 200mA

VGS = 0V, IS = 115mA

—

—

—

—

VDS = 25V, VGS = 0V,

pF

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

—

—

—

—

—

—

—

nC

ns

ns

ns

ns

V
I

V
R
I

DMN62D0LFD

60 V

±20 V

310
260

1.0 A

0.48 W

265 °C/W

= ±5V, VDS = 0V

GS

= ±10V, VDS = 0V

GS

= ±15V, VDS = 0V

GS

= 4V, ID = 100mA

GS

= 2.5V, ID = 50mA

GS

= 1.8V, ID = 50mA

GS

= 1.5V, ID = 10mA

GS

= 4.5V, VDS = 10V,

GS

= 250mA

D

= 10V, VDS = 30V,

GS

= 150, RG = 25,

L

= 200mA

D

mA

May 2014

© Diodes Incorporated

R

C

URRENT

R

CUR

R

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

R

OUR

C

R

RAIN-SO

U

R

CE O

N

R

T

N

C

DMN62D0LFD

0.5

V = 10VGS

V= 4.5V

0.4

GS

V= 4.0V

GS

0.5

V = 5.0VDS

0.4

NEW PRODUCT

ADVANCE INFORMATION

NEW PRODUCT

(A)

0.3

0.2

AIN

D

I, D

0.1

0.0
0 0.5 1.0 1.5 2.0 2.5 3.0

V= 3.5V

GS

V= 3.0V

GS

V= 2.5V

GS

V= 2.0V

GS

V= 1.2V

GS

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1 Typical Output Characteri stics

2.5

Ω

2.3

ESISTANCE ( )

CE

2.1

1.9

1.7

1.5

V = 2.5VGS

V = 4.5VGS

1.3

1.1

AIN-S

0.9

, D

0.7

DS(ON)

0.5
0 0.1 0.2 0.3 0.4 0.5

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

2.4

2.0

E

V=V

4

GS

I = 200mA

D

1.6

AIN-S

1.2

, D

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

V= 1.5V

GS

V = 10VGS

V=.5V

2

GS

I = 100mA

D

(A)

0.3

EN

GS

T = 150°C

A

T = 125°C

A

1.5 2.0 2.500.51.0

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.2

AIN

D

I, D

0.1

0

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

3.0

Ω

V= 4.5V

GS

T = 150°C

A

2.5

T = 125°C

ESISTANCE ( )

2.0

1.5

CE

1.0

A

T = 85°C

A

T = 25°C

A

AIN-S

T = -55°C

, D

0.5

DS(ON)

0

0 0.1 0.2 0.3 0.4 0.5

I , DRAIN CURRENT (A)

D

A

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

3.0

Ω

E ( )

2.5

A

2.0

ESIS

-

1.5

V=.5V

2

GS

I = 100mA

D

V=V

GS

I = 200mA

D

4

1.0

, D

0.5

DS(ON)

0.4

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 5 On-Resistance Variation with Temperature

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 6 On-Resistance Variation with Temperature

DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

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GATE THRESH

O

OLTAG

2

OUR

CE CUR

REN

T

C

CTION C

C

C

GATE THRESH

O

OLTAG

DMN62D0LFD

1.

0.5

NEW PRODUCT

ADVANCE INFORMATION

NEW PRODUCT

E (V)

1.0

LD V

0.8

I = 250µA

D

I= 1mA

D

0.6

GS(th)

V,

0.4

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Figure 7 Gate Threshold Variation vs. Ambient Temperature

100

C

E (pF)

iss

ITAN

APA

10

0.4

(A)

0.3

T= 25°C

A

0.2

S

I, S

0.1

0

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

10

8

E (V)

V = 10V

6

LD V

DS

I= A

250m

D

4

C

oss

, JUN

T

f = 1MHz

1

0 10203040

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

rss

Figure 9 Typical Junction Capacitance

1

D = 0.9
D = 0.7

D = 0.5

D = 0.3

0.1

D = 0.1

D = 0.05

D = 0.02

0.01

D = 0.01

D = 0.005

r(t), TRANSIENT THERMAL RESISTANCE

D = Single Pulse

2

GS

V

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Q(nC)

, TOTAL GATE CHARGE

g

Figure 10 Gate Charge

R (t) = r(t) * R

θθ

JA JA

R = 256°C/W

θ

JA

Duty Cycle, D = t1/ t2

0.001

0.000001

0.00001 0.0 001 0.0 01 0.0 1 0.1 1 10 100 1,0 00

t1, PULSE DURATION TIME (sec)

Figure 11 Transient The rmal Res istanc e

DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

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NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

A

A

1

A

3

Seating Plane

L

D
e

b

1

E

L

1

D

2

E

2

b

NEW PRODUCT

ADVANCE INFORMATION

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

Y

1

G

X

2

X

1

Y

2

X

Y

C

DMN62D0LFD

U-DFN1212-3

Type C

Dim Min Max Typ

A 0.47 0.53 0.50
A1 0 0.05 0.02
A3 - - 0.13

b 0.27 0.37 0.32

b1 0.17 0.27 0.22

D 1.15 1.25 1.20
D2 0.75 0.95 0.85

e - - 0.80

E 1.15 1.25 1.20

E2 0.40 0.60 0.50

L 0.25 0.35 0.30

L1 0.65 0.75 0.70

All Dimensions in mm

U-DFN1212-3

Type C

Dimensions Value

C 0.800
G 0.200

X 0.320
X1 0.520
X2 1.050

Y 0.450
Y1 0.250
Y2 0.850

All Dimensions in mm

DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

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NEW PRODUCT

DMN62D0LFD

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

NEW PRODUCT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

ADVANCE INFORMATION

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN62D0LFD

Document number: DS36359 Rev. 2 - 2

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