Diodes DMN62D0LFD User Manual
DMN62D0LFD
NEW PRODUCT
Product Summary
V
R
(BR)DSS
60V
2 @ V
2.5 @ VGS = 2.5V
DS(ON)
GS
= 4V
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
• DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
NEW PRODUCT
ADVANCE INFORMATION
Memories, Transistors, etc.
ESD PROTECTED
Top View
I
D
310mA
295mA
Bottom View
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: NiPdAu over Copper leadframe. Solderable per MIL-
STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.005 grams (approximate)
G pin
D
Pin-Out Top View
e4
S
Gate
G
Gate
Protection
Diode
Equivalent Circuit
Ordering Information (Note 4)
N-CHANNEL ENHANCEMENT MODE MOSFET
Part Number Compliance Case Packaging
DMN62D0LFD-7 Standard X1-DFN1212-3 3,000/Tape & Reel
DMN62D0LFD-13 Standard X1-DFN1212-3 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017
Code U V W X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
K63
YM
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
K63 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2013)
M = Month (ex: 9 = September)
1 of 6
www.diodes.com
Drain
Body
Diode
Source
May 2014
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage
T
= +25°C
Continuous Drain Current (Note 5) VGS = 4.0V
A
= +70°C
T
A
Pulsed Drain Current (Note 6) (10µs pulse, duty cycle = 1%)
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) R
Operating and Storage Temperature Range
NEW PRODUCT
Electrical Characteristics (@T
ADVANCE INFORMATION
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C I
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN62D0LFD
Document number: DS36359 Rev. 2 - 2
Characteristic Symbol Min Typ Max Unit Test Condition
= +25°C, unless otherwise specified.)
A
BV
DSS
DSS
60
— —
— —
I
GSS
— —
— —
V
GS(th)
0.6 — 1.0 V
—
R
DS(ON)
—
—
—
|Y
V
C
C
C
R
Q
Q
Q
t
D(on)
t
D(off)
SD
iss
oss
rss
gd
t
t
|
fs
g
g
gs
r
f
—
—
—
—
—
—
—
—
—
—
—
—
—
2 of 6
www.diodes.com
—
1.3 2
1.4 2.5
1.8 3
2.4
1.8
0.8 1.3 V
31
4.3
3.0
99
0.5
0.09
0.07
2.6
2.1
18
8.7
V
DSS
V
GSS
I
D
I
DM
P
D
JA
T
, T
J
STG
— V
1.0 A
±100 nA
±500 nA
±2.0 A
-55 to +150 °C
VGS = 0V, ID = 250A
VDS = 60V, VGS = 0V
V
V
V
VDS = VGS, ID = 250A
V
V
V
—
—
V
S
VDS = 10V, ID = 200mA
VGS = 0V, IS = 115mA
—
—
—
—
VDS = 25V, VGS = 0V,
pF
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
—
—
—
—
—
—
—
nC
ns
ns
ns
ns
V
I
V
R
I
DMN62D0LFD
60 V
±20 V
310
260
1.0 A
0.48 W
265 °C/W
= ±5V, VDS = 0V
GS
= ±10V, VDS = 0V
GS
= ±15V, VDS = 0V
GS
= 4V, ID = 100mA
GS
= 2.5V, ID = 50mA
GS
= 1.8V, ID = 50mA
GS
= 1.5V, ID = 10mA
GS
= 4.5V, VDS = 10V,
GS
= 250mA
D
= 10V, VDS = 30V,
GS
= 150, RG = 25,
L
= 200mA
D
mA
May 2014
© Diodes Incorporated
Loading...