Diodes DMN62D0LFB User Manual

n

r

DMN62D0LFB

NEW PRODUCT

Product Summary

V

R

(BR)DSS

2 @ V

60V

2.5 @ VGS = 2.5V

DS(ON)

GS

= 4V

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

ADVANCE INFORMATION

ESD PROTECTED

) and yet maintain superior switching

DS(on)

X1-DFN1006-3

Bottom View Top View

I

D

TA = 25°C

100mA

50mA

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drai

S

D

G

Pin-Out

Gate

Gate
Protection

Diode

Equivalent Circuit

Source

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN62D0LFB-7 NK 7 8 3,000

DMN62D0LFB-7B NK 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN62D0LFB-7

NK NK

Top View

Dot Denotes Drain Side

DMN62D0LFB-7B

Ba

Denotes Gate and Source Side

Top View

DMN62D0LFB

Document number: DS35409 Rev. 2 - 2

NK = Product Type Marking Code

1 of 6

www.diodes.com

October 2011

© Diodes Incorporated

)

g

g

g

g

)

r

)

DMN62D0LFB

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4) VGS = 4.0V

Steady

State

= 25°C

A

= 70°C

T

A

Pulsed Drain Current (Note 5)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Operating and Storage Temperature Range

Electrical Characteristics @ T

ADVANCE INFORMATION

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I

Gate-Source Leakage

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Repetitive rating, pulse width limited by junction temperature.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

Characteristic Symbol Min Typ Max Unit Test Condition

= 25°C unless otherwise stated

A

BV

DSS

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

60 - - V

- - 1.0

- - ±100 nA

- - ±500 nA

- - ±2.0

0.6 - 1.0 V

- 1.3 2

- 1.5 2.5

- 1.9 3

- 2.6 -

- 0.8 - S

- 0.9 1.3 V

- 32 -

- 4.4 -

- 2.9 -

- 126 -

- 0.45 -

- 0.08 -

- 0.08 -

- 3.4 - ns

- 3.4 - ns

- 26.4 - ns

- 16.3 - ns

V

DSS

V

GSS

I

D

I

DM

P

D

JA

T

, T

J

STG

60 V
±20 V
100

75

mA

200 mA

0.47 W
258 °C/W

-55 to +150 °C

VGS = 0V, ID = 250A

μA

μA

= 60V, VGS = 0V

V

DS

V

= ±5V, VDS = 0V

GS

V

= ±10V, VDS = 0V

GS

= ±15V, VDS = 0V

V

GS

VDS = VGS, ID = 250A

= 4V, ID = 100mA

V

GS

V

= 2.5V, ID = 50mA

Ω

GS

V

= 1.8V, ID = 50mA

GS

V

= 1.5V, ID = 10mA

GS

VDS = 10V, ID = 200mA
VGS = 0V, IS = 115mA

V

= 25V, VGS = 0V,

pF

Ω

nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

= 4.5V, VDS = 10V,

GS

I

= 250mA

D

V

= 10V, VDS = 30V,

GS

R

= 150, RG = 25,

L

= 200mA

I

D

DMN62D0LFB

Document number: DS35409 Rev. 2 - 2

2 of 6

www.diodes.com

October 2011

© Diodes Incorporated

R,DRAIN-SOUR

CE O

N-R

TAN

C

R

R

OUR

ON-R

A

DMN62D0LFB

NEW PRODUCT

0.6

I (A) @ V =2.5V

DGS

0.5

0.4

0.3

I (A) @ V =2.0V

DGS

I (A) @ V =4.0V

DGS

I (A) @ V =3.0V

DGS

I (A) @ V =4.5V

DGS

I (A) @ V =1.8V

DGS

0.2

D

I , DRAIN CURRENT (A)

0.1

0.0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , DRAIN -SOURCE VOLTAGE(V)

DS

Fig. 1 Typical Output Characteristics

I (A) @ V =1.5V

DGS

3

R ( ) Ave @ V =1.8V

Ω

E( )

Ω

DS(ON) G

2.5

ADVANCE INFORMATION

2

ESIS

R ( ) Ave @ V =2.5V

Ω

1.5

DS(ON) G

1

0.1

0.01

D

I , DRAIN CURRENT (A)

0.001
0 0.5 1 1.5 2

V , GATE SOURCE VOLTAGE(V)

GS

Fig. 2 Typical Transfer Characteristics

10

Ω

V = 5.0V

GS

ve R() @ 150C

Ω°

Ave R() @ 125C

Ω°

DS(ON)

DS(ON)

ESISTANCE( )

CE

Ave R() @ 85C

1

Ω°

DS(ON)

Ave R() @ 25C

Ω°

DS(ON)

R ( ) Ave @ V =4.5V

Ω

1

DS(ON) G

0.5

DS(ON)

0

0 0.1 0.2 0.3 0.4

I , DRAIN SOURCE CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and G at e Vol t age

Ω

3

2.5

2

1.5

1

0.5

AIN-S

Ave R() @ -55C

Ω°

DS(ON)

, D

DS(ON)

0.1
0 0.1 0.2 0.3 0.4

I , DRAIN SOURCE CURRENT (A)

D

Fig. 4 Typical On-Resistance vs.

Drain Curr ent and Temperature

1.6

1.4

1.2

1

0.8

0.6

TH

0.4

V , GATE THRESHOLD VOLTAGE (V)

0

-50 -25 0 25 50 75 100 125 150

DS(ON)

R , STA TIC DRAIN-SOURCE ON-RESISTANCE ( )

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 5 On- Re sistanc e Variation with Temperature

DMN62D0LFB

Document number: DS35409 Rev. 2 - 2

www.diodes.com

0.2

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 Gat e Threshold V ariation vs. Ambient Temperature

3 of 6

°

October 2011

© Diodes Incorporated

DMN62D0LFB

NEW PRODUCT

1

60
55
50

45

0.1

40
35

S

I (A)

30
25

0.01

20
15

T

C , JUNCTION CAPACITANCE (pF)

10

5

0.001

0.1

0.3 0.5 0.7 0.9 1.1

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 7 Diod es Forwar d Voltage vs. Current

10

V =10V, I =250mA

DS D

ADVANCE INFORMATION

8

0

0 5 10 15 20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 8 Typical Junction Ca pacitanc e

1

6

GS

V (V)

4

2

0

0 0.2 0.4 0.6 0.8 1 1.2

Q (nC)

G

Fig. 9 Gate Charge Characteristics

1

r(t) @ D=0.5

r(t) @ D=0.3

0.1

r(t) @ D=0.1

r(t) @ D=0.05

r(t) @ D=0.02

0.01

r(t) @ D=0.01

r(t) @ D=0.7

0.1

0.01

D

I , DRAIN CURRENT (A)

0.001

0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 10 SOA, Safe Operation Area

r(t) @ D=0.9

r(t), TRANSIENT THERMAL RESISTANCE

r(t) @ D=Single Pulse

0.001

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

DMN62D0LFB

Document number: DS35409 Rev. 2 - 2

r(t) @ D=0.005

t1, PULSE DURATION TIME (sec)

Fig. 11 Transient Therma l R esistance

4 of 6

www.diodes.com

R (t)=r(t) * R

θθ

JA JA

R =273 C/W

°

θ

JA

Duty Cycle, D=t1 / t2

October 2011

© Diodes Incorporated

NEW PRODUCT

Package Outline Dimensions

A

A1

b2

E

ADVANCE INFORMATION

Suggested Pad Layout

X

DMN62D0LFB

X1-DFN1006-3

Dim Min Max Typ

A 0.47 0.53 0.50

A1 0 0.05 0.03

D

b1

e

L2

L1L3

C

Dimensions Value (in mm)

X

1

G2

G1

Y

Z

b1 0.10 0.20 0.15
b2 0.45 0.55 0.50

D 0.95 1.075 1.00
E 0.55 0.675 0.60

e

⎯ ⎯

L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3

⎯ ⎯

All Dimensions in mm

Z 1.1
G1 0.3
G2 0.2

X 0.7

X1 0.25

Y 0.4
C 0.7

0.35

0.40

DMN62D0LFB

Document number: DS35409 Rev. 2 - 2

5 of 6

www.diodes.com

October 2011

© Diodes Incorporated

NEW PRODUCT

DMN62D0LFB

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document o r products described herein in such applica tions shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorize d application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

ADVANCE INFORMATION

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2011, Diodes Incorporated

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN62D0LFB

Document number: DS35409 Rev. 2 - 2

6 of 6

www.diodes.com

October 2011

© Diodes Incorporated