Diodes DMN62D0LFB User Manual

n

r

DMN62D0LFB

NEW PRODUCT

Product Summary

V

R

(BR)DSS

2 @ V

60V

2.5 @ VGS = 2.5V

DS(ON)

GS

= 4V

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management

applications.

• DC-DC Converters

• Power management functions

• Battery Operated Systems and Solid-State Relays

• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

ADVANCE INFORMATION

ESD PROTECTED

) and yet maintain superior switching

DS(on)

X1-DFN1006-3

Bottom View Top View

I

D

TA = 25°C

100mA

50mA

N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Drai

S

D

G

Pin-Out

Gate

Gate
Protection

Diode

Equivalent Circuit

Source

Ordering Information (Note 3)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN62D0LFB-7 NK 7 8 3,000

DMN62D0LFB-7B NK 7 8 10,000

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN62D0LFB-7

NK NK

Top View

Dot Denotes Drain Side

DMN62D0LFB-7B

Ba

Denotes Gate and Source Side

Top View

DMN62D0LFB

Document number: DS35409 Rev. 2 - 2

NK = Product Type Marking Code

1 of 6

www.diodes.com

October 2011

© Diodes Incorporated

)

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g

g

g

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r

)

DMN62D0LFB

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit
Drain-Source Voltage
Gate-Source Voltage

T

Continuous Drain Current (Note 4) VGS = 4.0V

Steady

State

= 25°C

A

= 70°C

T

A

Pulsed Drain Current (Note 5)

Thermal Characteristics

Characteristic Symbol Max Unit

Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4) R
Operating and Storage Temperature Range

Electrical Characteristics @ T

ADVANCE INFORMATION

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C I

Gate-Source Leakage

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Repetitive rating, pulse width limited by junction temperature.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.

Characteristic Symbol Min Typ Max Unit Test Condition

= 25°C unless otherwise stated

A

BV

DSS

DSS

I

GSS

V

GS(th

R

DS (ON)

|Y

|

fs

V

SD

C

iss

C

oss

C

rss

R
Q

Q

s

Q

d

t

D(on

t

t

D(off

t

f

60 - - V

- - 1.0

- - ±100 nA

- - ±500 nA

- - ±2.0

0.6 - 1.0 V

- 1.3 2

- 1.5 2.5

- 1.9 3

- 2.6 -

- 0.8 - S

- 0.9 1.3 V

- 32 -

- 4.4 -

- 2.9 -

- 126 -

- 0.45 -

- 0.08 -

- 0.08 -

- 3.4 - ns

- 3.4 - ns

- 26.4 - ns

- 16.3 - ns

V

DSS

V

GSS

I

D

I

DM

P

D

JA

T

, T

J

STG

60 V
±20 V
100

75

mA

200 mA

0.47 W
258 °C/W

-55 to +150 °C

VGS = 0V, ID = 250A

μA

μA

= 60V, VGS = 0V

V

DS

V

= ±5V, VDS = 0V

GS

V

= ±10V, VDS = 0V

GS

= ±15V, VDS = 0V

V

GS

VDS = VGS, ID = 250A

= 4V, ID = 100mA

V

GS

V

= 2.5V, ID = 50mA

Ω

GS

V

= 1.8V, ID = 50mA

GS

V

= 1.5V, ID = 10mA

GS

VDS = 10V, ID = 200mA
VGS = 0V, IS = 115mA

V

= 25V, VGS = 0V,

pF

Ω

nC

DS

f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
V

= 4.5V, VDS = 10V,

GS

I

= 250mA

D

V

= 10V, VDS = 30V,

GS

R

= 150, RG = 25,

L

= 200mA

I

D

DMN62D0LFB

Document number: DS35409 Rev. 2 - 2

2 of 6

www.diodes.com

October 2011

© Diodes Incorporated