Diodes DMN6140L User Manual
NEW PRODUCT
Product Summary
V
R
(BR)DSS
60V
140mΩ @ V
170mΩ @ VGS = 4.5V
DS(on) max
GS
= 10V
TA = +25°C
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
) and yet maintain superior switching
DS(ON)
Applications
• DC-DC Converters
• Power management functions
• Analog Switch
NEW PRODUCT
SOT23
Top View
I
D
2.3A
2.1A
D
G
Pin Configuration
DMN6140L
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0072 grams (approximate)
e3
D
G
S
S
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMN6140L-7 SOT23 3,000/Tape & Reel
DMN6140L-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
DMN6140L
Document number: DS35621 Rev. 3 - 2
N61
www.diodes.com
N61 = Marking Code
YM = Date Code Marking
YM
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
1 of 6
December 2013
© Diodes Incorporated
)
g
g
g
)
r
)
r
r
NEW PRODUCT
Maximum Ratings (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 6) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Thermal Characteristics (@T
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
NEW PRODUCT
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
= +25°C
Steady
State
t<10s
Steady
State
t<10s
= +25°C, unless otherwise specified.)
A
T
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
T
= +25°C
A
= +70°C
T
A
= +25°C
T
A
T
= +70°C
A
= +25°C
T
A
TA = +70°C
Steady State
t<10s 115
= +25°C
T
A
TA = +70°C
Steady State
t<10s 61
V
DSS
V
GSS
I
I
I
I
I
I
DM
T
D
D
D
D
S
P
D
R
Θ
JA
P
D
R
Θ
JA
R
Θ
JC
J, TSTG
DMN6140L
60 V
±20
1.6
1.2
2.0
1.6
2.3
1.8
2.9
2.3
1.5 A
10 A
0.7
0.4
183
1.3
0.8
94
39
-55 to +150 °C
V
A
A
A
A
W
°C/W
W
°C/W
Electrical Characteristics (@T
= +25°C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
DSS
I
GSS
DSS
60 — — V
— —
— —
1 µA
±100 nA
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS(ON)
|Y
V
SD
|
fs
1 — 3 V
—
—
—
92 140
115 170
2.2 — S
0.75 1.0 V
VDS = VGS, ID = 250µA
= 10V, ID = 1.8A
V
mΩ
GS
V
= 4.5V, ID = 1.3A
GS
VDS = 15V, ID = 1.8A
VGS = 0V, IS = 0.45A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistnace
C
iss
C
oss
C
rss
R
Total Gate Charge (VGS = 10V) Qg
Total Gate Charge (VGS = 5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse recovery time
Reverse recovery charge
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
Q
Q
t
D(on
t
D(off
Q
s
d
t
t
f
t
r
r
DMN6140L
Document number: DS35621 Rev. 3 - 2
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www.diodes.com
315
18
16
0.65
8.6
4.1
1.0
1.7
2.6
3.6
16.3
2.7
16.8
9.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 40V, VGS = 0V
V
pF
DS
f = 1.0MHz
Ω VDS = 0V, V
nC
ns
ns
nC
= 30V, ID = 1.8A
V
DS
V
= 30V, V
DS
R
= 6.0Ω, ID = 1.8A
G
= 1.8A, di/dt =100A/μs
I
F
= 0V, f = 1.0MHz
GS
= 10V,
GS
December 2013
© Diodes Incorporated
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