Diodes DMN6075S User Manual

DMN6075S

60V N-CHANNEL ENHANCEMENT MODE MOSFET

D

Top View

Features and Benefits

 N MOSFET

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.008 grams (approximate)

D

G

S

S

Top View

Pin Configuration

Summary

V

R

(BR)DSS

60V

85 m @ V

120 m @ VGS = 4.5V

DS(ON)

max

= 10V

GS

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power Management Functions

 Backlighting

ADVANCE INFORMATION

SOT23

Top View

I

D

2.5A

2.0A

max

G

Ordering Information (Note 4)

Product Reel size (inches) Tape width (mm) Quantity per reel

DMN6075S-7 7 8 3,000

DMN6075S-13 13 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2014 2015 2016 2017 2018 2019 2020

Code B C D E F G H

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

DMN6075S

Document number: DS37023 Rev. 2 - 2

Shanghai A/T Site

www.diodes.com

S67 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)

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© Diodes Incorporated

April 2014

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCE INFORMATION

Operating and Storage Temperature Range

Electrical Characteristics (@T

Steady

State

Steady

State

= +25°C, unless otherwise specified.)

A

T

= +25°C

A

T

= +70°C

A

T

= +25°C

A

T

= +70°C

A

= +25°C

T

A

TA = +70°C

Steady State

= +25°C

T

A

TA = +70°C

Steady State

= +25°C, unless otherwise specified.)

A

V

DSS

V

GSS

I

I

I

DM

T

D

D

P

D

R

JA



P

D

R

JA



J, TSTG

DMN6075S

60 V

±20 V

2.0

1.5

2.5

2.0

12 A

0.8

0.5

157 °C/W

1.15

0.7

110 °C/W

-55 to +150 °C

A

A

W

W

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

BV

DSS

I

GSS

DSS

60

— —

— — ±100 nA

—

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

R

DS(ON)

V

GS(th)

SD

1 — 3 V

69 85

—

—

75 120

— 1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

g

Total Gate Charge (VGS =10V) Qg

Total Gate Charge (VGS =4.5V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q

Q

t

D(on)

t

D(off)

gs

gd

t

r

t

f

— 606

— 32.6 — pF

—

—

24.6

1.5

— 12.3 — nC

—

—

— 1.9 — nC

—

—

— 35 — ns

—

5.6

1.7

3.5

4.1

11

DMN6075S

Document number: DS37023 Rev. 2 - 2

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www.diodes.com

— V

1.0 µA

VGS = 0V, ID = 250A

VDS = 60V, VGS = 0V

VGS = ±16V, VDS = 0V

VDS = VGS, ID = 250A

V

m

V

VGS = 0V, IS = 2.5A

—

pF

V
f = 1.0MHz

—

—

—

—

—

—

pF



VDS = 0V, VGS = 0V, f = 1MHz

nC

V

nC

ns

ns

V
R

—

ns

= 10V, ID = 3.2A

GS

= 4.5V, ID = 2.8A

GS

= 20V, VGS = 0V,

DS

= 30V, ID = 3A

DS

= 10V, VDS = 30V,

GS

= 20, RL = 50

G

© Diodes Incorporated

April 2014