Diodes DMN6075S User Manual

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DMN6075S

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Features and Benefits

 N MOSFET

 Low On-Resistance

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram Below

 Weight: 0.008 grams (approximate)

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Pin Configuration

Summary

(BR)DSS

60V

85 m @ V

120 m @ VGS = 4.5V

DS(ON)

max

= 10V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

 DC-DC Converters

 Power Management Functions

 Backlighting

ADVANCE INFORMATION

SOT23

Top View

2.5A

2.0A

max

Ordering Information (Note 4)

Product Reel size (inches) Tape width (mm) Quantity per reel

DMN6075S-7 7 8 3,000

DMN6075S-13 13 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2014 2015 2016 2017 2018 2019 2020

Code B C D E F G H

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Chengdu A/T Site

DMN6075S

Document number: DS37023 Rev. 2 - 2

Shanghai A/T Site

www.diodes.com

S67 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: B = 2014) M = Month (ex: 9 = September)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = 10V

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCE INFORMATION

Operating and Storage Temperature Range

Electrical Characteristics (@T

Steady

State

Steady

State

= +25°C, unless otherwise specified.)

= +25°C

= +70°C

= +25°C

= +70°C

= +25°C

TA = +70°C

Steady State

= +25°C

TA = +70°C

Steady State

= +25°C, unless otherwise specified.)

DSS

GSS



J, TSTG

DMN6075S

60 V

±20 V

2.0

1.5

2.5

2.0

12 A

0.8

0.5

157 °C/W

1.15

0.7

110 °C/W

-55 to +150 °C

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

DSS

GSS

DSS

— —

— — ±100 nA

—

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

DS(ON)

GS(th)

1 — 3 V

69 85

—

75 120

— 1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

iss

oss

rss

Total Gate Charge (VGS =10V) Qg

Total Gate Charge (VGS =4.5V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

D(on)

D(off)

— 606

— 32.6 — pF

—

24.6

1.5

— 12.3 — nC

—

— 1.9 — nC

—

— 35 — ns

—

5.6

1.7

3.5

4.1

DMN6075S

Document number: DS37023 Rev. 2 - 2

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— V

1.0 µA

VGS = 0V, ID = 250A

VDS = 60V, VGS = 0V

VGS = ±16V, VDS = 0V

VDS = VGS, ID = 250A

m

VGS = 0V, IS = 2.5A

—

V f = 1.0MHz

—



VDS = 0V, VGS = 0V, f = 1MHz

V R

—

= 10V, ID = 3.2A

= 4.5V, ID = 2.8A

= 20V, VGS = 0V,

= 30V, ID = 3A

= 10V, VDS = 30V,

= 20, RL = 50

April 2014

RAIN CUR

REN

RAIN CUR

OUR

ON-R

RAIN-SOUR

CE O

N-R

OUR

ON-R

DMN6075S

15.0

V= 10V

12.0

V= 4.0V

V=5.0V

V= 3.5V

(A)

9.0

6.0

3.0

V= 2.5V

0.0 012345

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

V= 3.0V

0.15



ADVANCE INFORMATION

0.12

V = 5.0VDS

(A)

T = 150°C

I, D

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

T = 125°C

V , GATE-SOURCE VOLTAGE (V)

T = 85°C

T = 25°C

T = -55°C

Figure 2 Typical Transfer Characteristics

0.2



E ( )

0.18

I = 3.2AD

0.16

ESISTANCE ( )

0.09

V = 4.5VGS

ESISTA

0.14

I = 2.8AD

AIN-S

, D

DS(ON)



ESISTANCE ( )

AIN-S

, D

0.06

V = 10VGS

0.03

03691215

I , DRAIN-SOURCE CURRENT (A)D

Figure 3 Typical On- Resistance vs.

Drain Current and Gate Voltage

0.2

V = 10VGS

T = 150°C

0.15

T = 125°C

T = 85°C

0.1

T = 25°C

0.05

T = -55°C

0.12

0.1

0.08

, D

0.06

DS(ON)

0.04 2 4 6 8 10 12 14 16 18 20

V , GATE-SOURCE VOLTAGE (V)GS

Figure 4 Typical Transfer Characteristics

2.4

V=V

I= 5A

1.6

AIN-S

, D

DS(ON)

1.2

0.8

ON-RESISTANCE (NORMALIZED)

V=4.5V

I= 3A

DS(ON)

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

DMN6075S

Document number: DS37023 Rev. 2 - 2

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0.4

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)



Figure 6 On-Resistance Variation with Temperature

April 2014

OUR

TANC

GATE THR

OLTAG

OUR

CE CUR

RENT

UNC

TION CAPACITANC

RESH

TAG

URR

DMN6075S

0.2

2.5



0.18

E ( )

0.16

V = 4.5V

ESIS

N-

0.14

0.12

0.1

I= 3A

V=V

0.08

0.06

AIN-S

0.04

, D

0.02

DS(ON)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

I= 5A



E (V)

I= 1mA

LD V

1.5

I= 250µA

GS(th)

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)



Figure 8 Gate Threshold Variation vs. Ambient Temperature

10000

f = 1MHz

ADVANCE INFORMATION

(A)

I, S

T =125°C

T =85°CA

T = 150°C

T= 25°C

T = -55°C

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

E (V)

LD V

V = 30V

I=A

02468101214

Q(nC)

, TOTAL GATE CHARGE

Figure 11 Gate Charge

1000

E (pF)

iss

100

oss

, J

0 10203040

V , DRAIN-SOURCE VOLTAGE (V)

100

Figure 10 Typical Junction Capacitance

DS(on)

Limited

rss

(A)

0.1

AIN

I, D

0.01

0.001

0.1 1 10 100

P = 10s

P = 1s

P = 100ms

P = 10ms

T = 150°C

J(max)

T = 25°C

V = 10V

Single Pulse

DUT on 1 * MRP Board

V , DRAIN-SOURCE VOLTAGE (V)

P = 1ms

P = 100µs

Figure 12 SOA, Safe Operation Area

DMN6075S

Document number: DS37023 Rev. 2 - 2

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HER

TANC



DMN6075S

0.1

ESIS

MAL

0.01

ANSIEN

r(t),

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, PULSE DURATION TIME (sec)

Figure 13 Transient Thermal Resistance

ADVANCE INFORMATION

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

All 7

Dim Min Max Typ

A 0.37 0.51 0.40 B 1.20 1.40 1.30

C 2.30 2.50 2.40 D 0.89 1.03 0.915

F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90

J 0.013 0.10 0.05 K 0.890 1.00 0.975

K1 0.903 1.10 1.025

L 0.45 0.61 0.55

L1 0.25 0.55 0.40

M 0.085 0.150 0.110

SOT23

8°

All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

DMN6075S

Document number: DS37023 Rev. 2 - 2

Dimensions Value (in mm)

Z 2.9

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X 0.8 Y 0.9 C E

2.0

1.35

April 2014

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

ADVANCE INFORMATION

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN6075S

Document number: DS37023 Rev. 2 - 2

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Diodes DMN6075S User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual