Diodes DMN6070SSD User Manual

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Page 1

NEW PRODUCT

Product Summary

(BR)DSS

60V

100mΩ @ VGS = 4.5V

DS(ON)

80mΩ @ V

max

= 10V

TA = 25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

 Backlighting  Power Management Functions  DC-DC Converters

ADVANCE INFORMATION

Top View

max

4.1A

3.6A

Top View

Pin Configuration

DMN6070SSD

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8  Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See diagram  Terminals: Finish  Matte Tin annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

D1S1

D 1

Equivalent Circuit

Ordering Information (Note 4)

Part Number Case Packaging

DMN6070SSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

Marking Information

DMN6070SSD

Document number: DS36342 Rev. 2 - 2

Top View

8 5

N6070SD

Y WW

1 4

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Logo

Part no.

Xth week: 01 ~ 53 Year: “11” = 2011

September 2013

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

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCE INFORMATION

Thermal Resistance, Junction to Case Operating and Storage Temperature Range

= +25°C

Steady

State

t<10s

= +70°C

= +25°C

= +70°C

= +25°C, unless otherwise specified.)

Steady State

t<10s 61

Steady State

t<10s 50

DSS

GSS



J, TSTG

DMN6070SSD

60 V

±20 V

3.3

2.6

4.1

3.4

2.0 A 12 A

1.2 W

104

1.5 W 83

14.5

-55 to +150 °C

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage

DSS

GSS

DSS

     

1 μA

100

ID = 250μA, VGS= 0V VDS= 60V, VGS= 0V

VGS= 16V, VDS= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

GS(th

DS (ON)



1.0



68 80

70 100

3.0 V

mΩ

0.75 1.1 V

ID= 250μA, VDS= VGS

= 10V, ID= 12A

= 4.5V, ID= 6A

IS= 12A, VGS= 0V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance Output Capacitance Reverse Transfer Capacitance 

iss

oss

rss

R Total Gate Charge (VGS= 4.5V) Qg Total Gate Charge (VGS= 10V) Qg Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q Q

D(on

D(off

  



       

588

26.5 20

1.5

5.6

12.3

1.7

1.9

3.5

4.1 35 11

  



       

= 30V, VGS= 0V

f= 1MHz

Ω Vgs= 0V, Vds= 0V, f=1MHz,

= 30V, ID= 3A

= 30V, VGS= 10V

 50Ω, RG  20Ω

DMN6070SSD

Document number: DS36342 Rev. 2 - 2

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RAIN CUR

REN

CUR

RAIN-SOUR

CE O

N-R

TAN

OUR

ON-R

RAIN

OUR

NEW PRODUCT

DMN6070SSD

15.0

V = 10VGS

12.0

(A)

9.0

6.0

I, D

V= 5.0V

V= 4.0V

V= 3.5V

V= 3.0V

3.0

V= 2.5V

0.0 012345

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

0.15



V = 5.0VDS

(A)

AIN

I, D

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

0.5



E ( )

ADVANCE INFORMATION

0.12

0.4

0.09

N-RESISTANCE ( )

URCE

0.06

V = 4.5VGS

V = 10VGS

0.03

DS(ON)

R , DRAIN-S

0 3 6 9 12 15

I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

0.3



V = 4.5VGS

0.25

ESIS

0.3

0.2

I= 12A

0.1

I= 6AD

, D

DS(ON)

2345678910

V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristics

2.4

V=V

I = 10A

0.2

ESISTANCE ( )

0.15

0.1

AIN-S

0.05

, D

DS(ON)

0 3 6 9 12 15

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

DMN6070SSD

Document number: DS36342 Rev. 2 - 2

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

-S

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1.6

1.2

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.4

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

V=4.5V

I= 5A



September 2013

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R, D

RAIN-SOUR

CE O

OUR

CE CUR

RENT

CUR

RENT

T T

TANC

NEW PRODUCT

DMN6070SSD

2.5



E ( )

ESIS

V = 4.5V

I= 5A

V=V

I = 10A

1.5

I= 1mA

I = 250µA

GS(th)

DS(ON)

V , GATE THRESHOLD VOLTAGE (V)

0.5

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

ADVANCE INFORMATION

(A)

T = 150°C

T = 125°C

T= 85°C



Figure 8 Gate Threshold Variation vs. Ambient Temperature

100

(A)

AIN

T= 25°C

I, S

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

T = -55°C

Figure 9 Diode Forward Voltage vs. Current

-I , D

0.01

0.001

T, JUNCTION TEMPERATURE (C)

DS(on)

Limited

P = 10s

P = 1s

0.1

T = 150°C

J(max )

T = 25°C

V = -8V

Single P ulse DUT on 1 * MRP Board

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

P = 100ms

P = 10ms

Figure 10 SOA, Safe Operation Area

D = 0.9

D = 0.7

D = 0.5

D = 0.3

P = 1ms



P = 100µs

ESIS

0.1

D = 0.1

MAL

D = 0.05

D = 0.02

0.01

D = 0.01

ANSIEN

D = 0.005

r(t),

D = Single Pulse

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

R (t) = r(t) * R



JA JA

R = 108°C/W



Duty Cycle, D = t1/ t2

t1, PULSE DURATION TIME (sec)

Figure 11 Transient Thermal Resistance

DMN6070SSD

Document number: DS36342 Rev. 2 - 2

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NEW PRODUCT

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

ADVANCE INFORMATION

Detail ‘A’

0.254 Gauge Plane

Seating Plane

7°~9

Detail ‘A’

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

Dim Min Max

A - 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25

b 0.3 0.5

D 4.85 4.95

E 5.90 6.10 E1 3.85 3.95

e 1.27 Typ

h - 0.35

L 0.62 0.82



All Dimensions in mm

X 0.60

Y 1.55 C1 5.4 C2 1.27

DMN6070SSD

SO-8

0 8

DMN6070SSD

Document number: DS36342 Rev. 2 - 2

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NEW PRODUCT

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

ADVANCE INFORMATION

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

IMPORTANT NOTICE

LIFE SUPPORT

DMN6070SSD

Document number: DS36342 Rev. 2 - 2

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