Diodes DMN6070SSD User Manual

Y

NEW PRODUCT

Product Summary

V

R

(BR)DSS

60V

100mΩ @ VGS = 4.5V

DS(ON)

80mΩ @ V

max

= 10V

GS

TA = 25°C

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

) and yet maintain superior switching performance, making it

(R

DS(on)

ideal for high efficiency power management applications.

 Backlighting
 Power Management Functions
 DC-DC Converters

ADVANCE INFORMATION

Top View

G1

S2

G2

I

max

D

4.1A

3.6A

Top View

Pin Configuration

DMN6070SSD

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SO-8
 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  Matte Tin annealed over Copper leadframe

Solderable per MIL-STD-202, Method 208

 Weight: 0.074 grams (approximate)

D1S1

D1

D2

D2

G1

D 1

G2

S1

Equivalent Circuit

D2

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMN6070SSD-13 SO-8 2500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

DMN6070SSD

Document number: DS36342 Rev. 2 - 2

Top View

8 5

N6070SD

Y WW

1 4

www.diodes.com

1 of 6

Logo

Part no.

Xth week: 01 ~ 53
Year: “11” = 2011

September 2013

© Diodes Incorporated



)

g

g

g

)

r

)

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)

Thermal Characteristics (@T

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

ADVANCE INFORMATION

Thermal Resistance, Junction to Case
Operating and Storage Temperature Range

= +25°C

Steady

State

t<10s

T

A

T

= +70°C

A

T

= +25°C

A

= +70°C

T

A

= +25°C, unless otherwise specified.)

Steady State

t<10s 61

Steady State

t<10s 50

V

DSS

V

GSS

I

I

I

I

DM

T

D

D

S

P

D

R

JA



P

D

R

JA



R

JC

J, TSTG

DMN6070SSD

60 V

±20 V

3.3

2.6

4.1

3.4

2.0 A
12 A

1.2 W

104

1.5 W
83

14.5

-55 to +150 °C

A

A

°C/W

°C/W

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

60

 
 
 

1 μA

100

V

ID = 250μA, VGS= 0V
VDS= 60V, VGS= 0V

nA

VGS= 16V, VDS= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD



1.0





68 80

70 100

3.0 V

mΩ

0.75 1.1 V

ID= 250μA, VDS= VGS

= 10V, ID= 12A

V

GS

V

= 4.5V, ID= 6A

GS

IS= 12A, VGS= 0V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance


C

iss

C

oss

C

rss

R
Total Gate Charge (VGS= 4.5V) Qg
Total Gate Charge (VGS= 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

t

t

Q
Q

D(on

t

D(off

t

s

d

f
















588

26.5
20

1.5

5.6

12.3

1.7

1.9

3.5

4.1
35
11
















= 30V, VGS= 0V

V

pF

DS

f= 1MHz

Ω Vgs= 0V, Vds= 0V, f=1MHz,

nC

nS

= 30V, ID= 3A

V

DS

V

= 30V, VGS= 10V

DD

R

 50Ω, RG  20Ω

L

DMN6070SSD

Document number: DS36342 Rev. 2 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated