Diodes DMN6070SFCL User Manual

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DMN6070SFCL

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

(BR)DSS

60V

85 m @ V

120 m @ VGS = 4V

DS(ON)

max

= 10V

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• Power Management Functions

• Analog Switch

ADVANCE INFORMATION

Top View

X1-DFN1616-6

Type E

Bottom View

max

3.0A

2.5A

Pin 1

Features and Benefits

• Typical off board profile of 0.5mm - ideally suited for thin

applications

• Low R

• PCB footprint of 2.56mm

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

– minimizes conduction losses

DS(ON)

Mechanical Data

• Case: X1-DFN1616-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Lead Free Plating (NiPdAu Finish over Copper leadframe)

• Terminals: Solderable per MIL-STD-202, Method 208

• Weight: 0.04 grams (approximate)

Device Symbol

Top View

Pin-Out

Ordering Information (Note 4)

Product Reel size (inches) Tape Width (mm) Quantity per Reel

DMN6070SFCL-7 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

N60

DMN6070SFCL

Document number: DS36502 Rev. 3 - 2

N60 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10s pulse, Duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

ADVANCE INFORMATION

Electrical Characteristics N-CHANNEL (@T

DMN6070SFCL

DSS

GSS

= +25°C

Steady

State

(Note 5)

(Note 6) 1.8 W

(Note 5)

(Note 6) 67

= +70°C

J, TSTG

= +25°C, unless otherwise specified.)

JA

-55 to +150 °C

60 V

±20 V

3.0

2.5

10 A

0.6 W

200

°C/W

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

DSS

GSS

60 — — V

— — 1.0 µA

— —

±100 nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

GS(th)

DS (ON)

1 — 3 V

—

74 120

— 2.6 — S

—

0.7 1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

iss

oss

rss

Total Gate Charge (VGS =10V) Qg

Total Gate Charge (VGS =4.5V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

D(on)

D(off)

—

— 32.6 — pF

—

— 12.3 — nC

—

— 1.9 — nC

—

— 35 — ns

—

606

24.6

1.5

5.6

1.7

3.5

4.1

DMN6070SFCL

Document number: DS36502 Rev. 3 - 2

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—

VGS = 0V, ID = 250A

VDS = 60V, VGS = 0V

VGS = ±16V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 1.5A

m

= 4V, ID = 0.5A

VDS = 5V, ID = 1.5A

VGS = 0V, IS = 3A

= 20V, VGS = 0V,

f = 1.0MHz



VDS = 0V, VGS = 0V, f = 1MHz

= 30V, ID = 3A

= 10V, VDS = 30V,

= 20, RL = 50

March 2014

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N CUR

RENT

OUR

ON-R

OUR

ON-R

R, D

OUR

N-SOUR

CE O

DMN6070SFCL

15.0

V = 10VGS

V= 5V

12.0

V= 4V

(A)

9.0

6.0

I, D

3.0

0.0 012345

V= 3.5V

V= 2.5V

V , DRAIN-SOURCE VOLTAGE (V)

V= 3.0V

Figure 1 Typical Output Characteristics

0.15

0.12

ADVANCE INFORMATION

ESISTANCE ( )

0.09

0.06

AIN-S

0.03

, D

DS(ON)

0 3 6 9 12 15

I , DRAIN-SOURCE CURRENT (A)D Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

2.4

V= 4V

V = 10VGS

V= 5V

(A)

AIN

I, D

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

T = 150°C

T = 125°C

V , GATE-SOURCE VOLTAGE (V)

T = 85°C

T = 25°C

T = -55°C

Figure 2 Typical Transfer Characteristics

0.3

V= 4V

0.25

ESISTANCE ( )

0.2

0.15

T = 125°C

0.1

AIN-S

T = 25°C

, D

0.05

DS(ON)

0 3 6 9 12 15

I , DRAIN CURRENT (A)

Figure 4 Typical On-Resistance vs.

Drain Current and Temperature

0.2

T = 150°C

T = 85°C

T = -55°C

0.18

E ( )

2.0

1.6

-S

V=V

I= 3A

1.2

DS(ON)

0.8

ON-RESISTANCE (NORMALIZED)

0.4

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 5 On-Resistance Variation with Temperature

V=4V

I= 3A

0.16

0.14

ESIS

0.12

V=4V

I= 1A

0.1

0.08

0.06

0.04

, D

0.02

DS(ON)

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

V=V

I= 3A

Figure 6 On-Resistance Variation with Temperature

DMN6070SFCL

Document number: DS36502 Rev. 3 - 2

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GATE THRESH

OLTAG

OUR

CE CUR

UNC

TION CAPACITANC

GATE THRESH

OLTAG

2.5

DMN6070SFCL

E (V)

T = 150°C

I= 1mA

LD V

I = 250µA

1.5

GS(th)

0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

10000

(A)

I, S

0 0.3 0.6 0.9 1.2 1.5

V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

T = 125°C

T= 85°C

T= 25°C

T = -55°C

E (V)

LD V

V = 30V

I=A

ADVANCE INFORMATION

E (pF)

1000

iss

100

oss

, J

f = 1MHz

0 10203040

V , DRAIN-SOURCE VOLTAGE (V)

rss

Figure 9 Typical Junction Capacitance

0 2 4 6 8 10 12 14

Q(nC)

, TOTAL GATE CHARGE

Figure 10 Gate Charge

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Z(4X)

L(2X)

b(6X)

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DMN6070SFCL

Document number: DS36502 Rev. 3 - 2

X1-DFN1616-6

Type E

Dim Min Max Typ

A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 — — 0.13

b 0.20 0.30 0.25 b1 0.10 0.30 0.20

D 1.55 1.65 1.60 D2 0.57 0.77 0.67

E 1.55 1.65 1.60 E2 1.30 1.50 1.40

e — — 0.50

L 0.25 0.35 0.30 L1 0.52 0.72 0.62

Z — — 0.175

All Dimensions in mm

March 2014

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DMN6070SFCL

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

ADVANCE INFORMATION

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated.

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

X (6x)

Y (2x)

Dimensions

C 0.500

IMPORTANT NOTICE

LIFE SUPPORT

X 0.300 X1 0.200 X2 0.720 X3 0.400

Y 0.475 Y1 0.620 Y2 1.900

Value

(in mm)

DMN6070SFCL

Document number: DS36502 Rev. 3 - 2

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