Diodes DMN6070SFCL User Manual

DMN6070SFCL

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

R

(BR)DSS

60V

85 m @ V

120 m @ VGS = 4V

DS(ON)

max

= 10V

GS

TA = +25°C

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• Power Management Functions

• Analog Switch

ADVANCE INFORMATION

Top View

X1-DFN1616-6

Type E

Bottom View

I

max

D

3.0A

2.5A

Pin 1

Features and Benefits

• Typical off board profile of 0.5mm - ideally suited for thin

applications

• Low R

• PCB footprint of 2.56mm

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

– minimizes conduction losses

DS(ON)

2

Mechanical Data

• Case: X1-DFN1616-6 Type E

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Lead Free Plating (NiPdAu Finish over Copper leadframe)

• Terminals: Solderable per MIL-STD-202, Method 208

• Weight: 0.04 grams (approximate)

e4

D

G

S

Device Symbol

Top View

Pin-Out

Ordering Information (Note 4)

Product Reel size (inches) Tape Width (mm) Quantity per Reel

DMN6070SFCL-7 7 8 3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

N60

YM

DMN6070SFCL

Document number: DS36502 Rev. 3 - 2

N60 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)

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March 2014

© Diodes Incorporated

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10s pulse, Duty cycle = 1%)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

ADVANCE INFORMATION

Electrical Characteristics N-CHANNEL (@T

DMN6070SFCL

V

DSS

V

GSS

= +25°C

Steady

State

(Note 5)

(Note 6) 1.8 W

(Note 5)

(Note 6) 67

T

A

= +70°C

T

A

R

T

J, TSTG

= +25°C, unless otherwise specified.)

A

I

D

I

DM

P

D

JA

-55 to +150 °C

60 V

±20 V

3.0

2.5

10 A

0.6 W

200

A

°C/W

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current TJ = +25°C I

Gate-Source Leakage

BV

I

DSS

DSS

GSS

60 — — V

— — 1.0 µA

— —

±100 nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance

Diode Forward Voltage

V

GS(th)

R

DS (ON)

|Y

V

SD

|

fs

1 — 3 V

—

67

74 120

— 2.6 — S

—

0.7 1.2 V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C

iss

C

oss

C

rss

R

g

Total Gate Charge (VGS =10V) Qg

Total Gate Charge (VGS =4.5V) Qg

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q

Q

t

D(on)

t

D(off)

gs

gd

t

r

t

f

—

— 32.6 — pF

—

—

— 12.3 — nC

—

—

— 1.9 — nC

—

—

— 35 — ns

—

606

24.6

1.5

5.6

1.7

3.5

4.1

11

DMN6070SFCL

Document number: DS36502 Rev. 3 - 2

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85

—

—

—

—

—

—

—

—

VGS = 0V, ID = 250A

VDS = 60V, VGS = 0V

VGS = ±16V, VDS = 0V

VDS = VGS, ID = 250A

= 10V, ID = 1.5A

V

m

GS

V

= 4V, ID = 0.5A

GS

VDS = 5V, ID = 1.5A

VGS = 0V, IS = 3A

pF

= 20V, VGS = 0V,

V

DS

f = 1.0MHz

pF



VDS = 0V, VGS = 0V, f = 1MHz

nC

nC

= 30V, ID = 3A

V

DS

ns

ns

= 10V, VDS = 30V,

V

GS

= 20, RL = 50

R

G

ns

March 2014

© Diodes Incorporated