Diodes DMN6069SE User Manual

DMN6069SE

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

V

R

(BR)DSS

60V

69mΩ @ V

100mΩ @ VGS = 4.5V

DS(ON)

max

= 10V

GS

D

TA = +25°C

4.3A

3.5A

Description

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

) and yet maintain superior switching

DS(on)

Applications

 Motor control
 Transformer driving switch

ADVANCE INFORMATION

 DC-DC Converters
 Power management functions
 Uninterrupted power supply

SOT223

Top View

Features

 100% Unclamped Inductive Switch (UIS) test in production

 Fast switching speed

 Low on-resistance

 Lead-Free Finish; RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic, “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See diagram below

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

 Weight: 0.112 grams (approximate)

Pin Out - Top View

UL Flammability Classification Rating 94V-0 (Note 1)

Solderable per MIL-STD-202, Method 208

D

G

S

Equivalent Circuit

Ordering Information (Note 4)

Part Number Qualification Case Packaging

DMN6069SE-13 Standard SOT223 2,500 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

YWW

N6069

DMN6069SE

D

atasheet number: DS36474 Rev. 2 - 2

YWW

N6069

= Manufacturer’s Marking
N6069 = Marking Code
YWW = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YWW = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y= Year (ex: 3 = 2013)
WW = Week (01 - 53)

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)

g

g

)

r

)

DMN6069SE

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current

T

= +25°C

A

T

= +70°C

A

TC = +25°C

= +70°C

T

C

V

DSS

V

GSS

I

D

I

D

I

DM

I

S

60 V

±20 V

4.3

3.3

10

8

A

A

25 A

3.2 A

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

T

Total Power Dissipation (Note 5)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

A = +25°C

TA = +70°C 1.4

P

R

P

R

T

J, TSTG

θJA

θJC

D

D

2.2
W

58 °C/W
11 W

8.9 °C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

I

DSS

DSS

GSS

60

 
 
 

1 μA

100

V

VGS = 0V, ID = 250μA
VDS = 60V, VGS = 0V

nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS (ON)

V

SD

1







47 69

54 100

0.8 1.1 V

3 V

VDS = VGS, ID = 250μA
V

mΩ

GS

V

GS

VGS = 0V, IS = 2.5A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = 4.5V) Qg
Total Gate Charge (VGS = 10V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

Q

s

Q

d

t

D(on

t



t

D(off

t



f

















825

40

29

2.3

7.2
16

3.2

2.8

3.8

6.7
16

5.3

















V

pF

nC

nS

DS

f = 1MHz

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

V

DS

V

DD

R

G

= 10V, ID = 3A
= 4.5V, ID = 2.4A

= 30V, VGS = 0V

= 30V, ID = 12A

= 30V, VGS = 10V,

= 6Ω, ID = 12A

DMN6069SE

D

atasheet number: DS36474 Rev. 2 - 2

2 of 6

www.diodes.com

January 2014

© Diodes Incorporated