Diodes DMN6068SE User Manual

A

f

Product Summary

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Diodes Incorporated

DMN6068SE

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

V

R

(BR)DSS

60V

DS(on)

68m @ V

100m @ VGS= 4.5V

GS

= 10V

T

Description

This MOSFET has been designed to minimize the on-state resistance

and yet maintain superior switching performance, making it ideal for

high efficiency power management applications.

Applications

 Motor Control

ADVANCE INFORMATION

 Transformer Driving Switch

 DC-DC Converters

 Power Management Functions

 Uninterrupted Power Supply

SOT223

Top View

I

D

= +25C

A

5.6A

4.7A

 100% Unclamped Inductive Switch (UIS) test in production

 Low on-resistance

 Fast switching speed

 Lead-Free Finish; RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: SOT223

 Case Material: Molded Plastic, “Green” Molding Compound.

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals Connections: See diagram below

 Terminals: Finish - Matte Tin annealed over Copper lead frame.

 Weight: 0.112 grams (approximate)

Pin Out - Top View

UL Flammability Classification Rating 94V-0

Solderable per MIL-STD-202, Method 208

D

G

S

Equivalent Circuit

e3

Ordering Information (Note 4 & 5)

Part Number Qualification Case Packaging

DMN6068SE-13 Standard SOT223 4000 / Tape & Reel

DMN6068SEQ-13 Automotive SOT223 4000 / Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.

Marking Information

YWW

N6068

DMN6068SE

Document Number DS32033 Rev. 4 - 2

www.diodes.com

= Manufacturer’s Marking
N6068 = Product Type Marking Code
YWW = Date Code Marking
Y = Year (ex: 9 = 2009)
WW = Week (01 - 53)

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Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Drain-Source voltage

Gate-Source voltage (Note 6)

Single Pulsed Avalanche Energy (Note 11)

Single Pulsed Avalanche Current (Note 11)

V

DSS

V

GS

E

AS

I

AS

(Note 8)

Continuous Drain current

V

GS

= 10V

TA = +70°C (Note 8)

I

D

(Note 7) 4.1

Pulsed Drain current

V

GS

= 10V

Continuous Source current (Body diode) (Note 8)

Pulsed Source current (Body diode) (Note 9)

(Note 9)

IDM

I

S

I

SM

ADVANCE INFORMATION

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Unit

Power dissipation
Linear derating factor

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead (Note 10)

Operating and storage temperature range

Notes: 6. AEC-Q101 VGS maximum is 16V.

7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.

8. Same as note (3), except the device is measured at t  10 sec.

9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

10. Thermal resistance from junction to solder-point (at the end of the drain lead).

11. UIS in production with L = 3.0mH, I

(Note 7)

P

D

(Note 8)

(Note 7)

(Note 8) 34

= 5.0A, RG = 25, VDD=50V, starting TJ = +25°C.

AS

R

JA

R

JL

T

, T

J

STG

Diodes Incorporated

DMN6068SE

60 V

20

37.5 mJ

5.0 A

5.6

4.5

20.8 A

4.9 A

20.8 A

2.0

16.0

3.7

29.5

62.5

11.5

-55 to +150 °C

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V

A

W

mW/°C

°C/W

DMN6068SE

Document Number DS32033 Rev. 4 - 2

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Thermal Characteristics

R

10

Limited

1

100m

Drain Current (A)
I

Single Pulse

D

10m

100m 1 10

ADVANCE INFORMATION

DS(on)

DC

1s

100ms

10ms

1ms

T

amb

=25°C

100µs

VDS Drain-Source Voltage (V)

Safe Operating Area

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2.0

1.6

1.2

0.8

0.4

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Derating Curve

DMN6068SE

70

T

=25°C

amb

60

50

40

D=0.5

30

20

D=0.2

10

0

100µ 1m 10m 100m 1 10 100 1k

Thermal Resistance (°C/W)

Pulse Width (s)

Transient Thermal Impedance

D=0.1

Single Pulse

D=0.05

Single Pul se

T

=25°C

100

10

amb

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

Pulse Width (s)

Pulse Power Dissipation

DMN6068SE

Document Number DS32033 Rev. 4 - 2

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© Diodes Incorporated