Diodes DMN6066SSS User Manual

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f

Product Summary

V

R

(BR)DSS

60V

DS(on)

66mΩ @ V

97mΩ @ VGS = 4.5V

GS

= 10V

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

• Motor control

ADVANCE INFORMATION

• Backlighting

• DC-DC Converters

• Power management functions

SO-8

Top View

T

= 25°C

A

5.0A

4.1A

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DMN6066SSS

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

I

D

• Low on-resistance

• Fast switching speed

• “Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D

G

S

Top View

Equivalent Circuit

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN6066SSS-13 N6066SS 13 12 2,500

Notes: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

DMN6066SSS

Document Number DS32110 Rev 2 - 2

N6066SS

YY

WW

www.diodes.com

= Manufacturer’s Marking
N6066SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)

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November 2011

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DMN6066SSS

Maximum Ratings @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage (Note 2)
Single Pulsed Avalanche Energy (Note 7) E

Single Pulsed Avalanche Current (Note 7) I

(Note 4)

Continuous Drain current

V

GS

= 10V

TA = 70°C (Note 4)
(Note 3)

Pulsed Drain current

V

= 10V

GS

(Note 5)
Continuous Source current (Body diode) (Note 4)
Pulsed Source current (Body diode) (Note 5)

Thermal Characteristics @T

ADVANCE INFORMATION

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

Power dissipation
Linear derating factor

Thermal Resistance, Junction to Ambient

(Note 3)

(Note 4)

(Note 3)

(Note 4) 44.5
Thermal Resistance, Junction to Lead (Note 6)
Operating and storage temperature range

Notes: 2. AEC-Q101 VGS maximum is ±16V.
measured when operating in a steady-state condition.

3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

4. Same as note (3), except the device is measured at t ≤ 10 sec.

5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

6. Thermal resistance from junction to solder-point (at the end of the drain lead).

7. UIS in production with L = 3.0mH, I

= 5.0A, RG = 25, VDD=50V, starting TJ = 25°C.

AS

V

DSS

V

GS

37.5 mJ

S

5.0 A

S

60 V

±20

V

5.0

I

D

4.0

A

3.7

IDM

I

S

I

SM

23 A

4.0 A
23 A

1.56

P

D

12.5

2.81

W

mW/°C

22.5

R

JA

θ

R

JL

T

, T

J

STG

80.0

37.0

-55 to 150

°C/W

°C

DMN6066SSS

Document Number DS32110 Rev 2 - 2

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Thermal Characteristics

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Diodes Incorporated

DMN6066SSS

R

Limited

DS(on)

10

1

100m

10m

ADVANCE INFORMATION

Drain Current (A)

1m

D

I

100m 1 10

DC

1s

Single Pulse

T

=25°C

amb

100ms

10ms

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating A rea

80
70
60
50
40
30
20
10

Thermal Resistance (°C/ W)

T

=25°C

amb

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Impedance

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipati on (W)

Temperature (°C)

25mm x 25mm

1oz FR4

Derating Curve

Single Pulse

T

=25°C

100

10

Maximum Power (W)

1

100µ 1m 10m 100m 1 10 100 1k

amb

Pulse Width (s)

Pulse Power Dissipation

DMN6066SSS

Document Number DS32110 Rev 2 - 2

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November 2011

© Diodes Incorporated