Diodes DMN6066SSD User Manual

A

f

Product Summary

V

R

(BR)DSS

60V

DS(on)

66mΩ @ V

97mΩ @ VGS = 4.5V

GS

= 10V

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

• Motor control

ADVANCE INFORMATION

• Backlighting

• DC-DC Converters

• Power management functions

SO-8

Top View

T

= 25°C

A

4.4A

3.6A

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DMN6066SSD

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

I

D

• Low on-resistance

• Fast switching speed

• 100% Unclamped Inductive Switch (UIS) test in production

• “Green” component and RoHS compliant (Note 1)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals Connections: See diagram below

• Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D2

S2

Top View

G1

D1

G2

S1

Equivalent Circuit

Ordering Information (Note 1)

Product Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN6066SSD-13 N6066SD 13 12 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about

Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

DMN6066SSD

Document Number DS32109 Rev 3 - 2

N6066SD

YY

WW

= Manufacturer’s Marking
N6066SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)

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DMN6066SSD

Maximum Ratings @T

= 25°C unless otherwise specified

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Characteristic Symbol Value Unit

Drain-Source voltage
Gate-Source voltage (Note 2)
Single Pulsed Avalanche Energy (Note 9) E

Single Pulsed Avalanche Current (Note 9) I

(Note 4)

Continuous Drain current

V

GS

= 10V

TA = 70°C (Note 4)
(Note 3) 3.3

Pulsed Drain current

V

GS

= 10V

(Note 5)
Continuous Source current (Body diode) (Note 4)
Pulsed Source current (Body diode) (Note 5)

ADVANCE INFORMATION

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Unit

(Notes 3 & 6)
Power dissipation

Linear derating factor

(Notes 3 & 7)

(Notes 4 & 6)

(Notes 3 & 6)
Thermal Resistance, Junction to Ambient

(Notes 3 & 7) 70

(Notes 4 & 6) 58
Thermal Resistance, Junction to Lead (Notes 6 & 8)
Operating and storage temperature range

Notes: 2. AEC-Q101 VGS maximum is ±16V.
measured when operating in a steady-state condition.

3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

4. Same as note (3), except the device is measured at t ≤ 10 sec.

5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.

6. For a dual device with one active die.

7. For a device with two active die running at equal power.

8. Thermal resistance from junction to solder-point (at the end of the drain lead).

9. UIS in production with L = 3.0mH, I

= 5.0A, RG = 25, VDD = 50V, starting TJ = 25°C.

AS

V

DSS

V

GS

37.5 mJ

S

5.0 A

S

60 V

±20

V

4.4

I

D

IDM

I

S

I

SM

3.5

17.0 A

3.2 A

17.0 A

A

1.25
10

P

D

1.8

14.3

W

mW/°C

2.14

17.2

100

R

JA

θ

R

JL

T

, T

J

STG

55

-55 to 150

°C/W

°C

DMN6066SSD

Document Number DS32109 Rev 3 - 2

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Thermal Characteristics

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DMN6066SSD

R

Limited

DS(on)

10

1

100m

10m

ADVANCE INFORMATION

Drain Current (A)

1m

D

I

100m 1 10

DC

1s

Single Pulse

T

=25°C

amb

One active die

100ms

10ms

1ms

100µs

VDS Drain-Source Voltage (V)

Safe Operating Area

110
100

90
80
70
60
50
40
30
20
10

Thermal Resistance (°C/W)

T

=25°C

amb

One active die

D=0.5

D=0.2

0

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

Transient Thermal Imp edan ce

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

One active die

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Pow er D issipati o n (W )

Temperature (°C)

Two active die

Derating Curve

Single Pulse

T

=25°C

100

10

1

Maximum Power (W)

100µ 1m 10m 100m 1 10 100 1k

amb

One active die

Pulse Width (s)

Pulse Power Dissipation

DMN6066SSD

Document Number DS32109 Rev 3 - 2

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