Diodes DMN6040SSS User Manual
NEW PRODUCT
Product Summary
V
R
(BR)DSS
60V
55mΩ @ VGS = 4.5V
DS(ON)
40mΩ @ V
max
= 10V
GS
TA = 25°C
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
) and yet maintain superior switching performance, making it
(R
DS(on)
ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters
ADVANCE INFORMATION
SO-8
Top View
I
D
5.5A
4.7A
max
DMN6040SSS
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
S
S
S
G
Top View
Internal Schematic
D
D
D
D
Ordering Information (Note 4)
Part Number Case Packaging
DMN6040SSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
4. For packaging details, go to our website at http://www.diodes.com.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
DMN6040SSS
Document number: DS35709 Rev. 3 - 2
Top View
8 5
N6040SS
WW
YY
1 4
1 of 6
www.diodes.com
Logo
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
© Diodes Incorporated
May 2012
θ
)
g
g
)
r
)
r
r
NEW PRODUCT
Maximum Ratings @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
Thermal Characteristics @T
= 25°C unless otherwise specified
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
ADVANCE INFORMATION
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady
State
t<10s
DMN6040SSS
V
DSS
V
GSS
= 25°C
T
A
= 70°C
T
A
= 25°C
T
A
T
= 70°C
A
T
= 25°C
A
TA = 70°C
Steady State
t<10s 48
T
= 25°C
A
TA = 70°C
Steady State
t<10s 37
I
D
I
D
I
S
I
DM
I
AR
E
AR
T
J, TSTG
P
D
R
JA
θ
P
D
R
JA
θ
R
JC
60 V
±20 V
5.5
4.4
7.0
5.5
2.5 A
30 A
14.2 A
10 mJ
1.5
1
80
2.0
1.3
61
6.4
-55 to 150 °C
A
A
W
°C/W
W
°C/W
Electrical Characteristics T
= 25°C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV
I
I
DSS
DSS
GSS
60
⎯ ⎯
⎯ ⎯
⎯ ⎯
100 nA
±100
V
VGS = 0V, ID = 250μA
VDS = 60V, VGS = 0V
nA
V
= ±20V, VDS = 0V
GS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V
GS(th
R
DS (ON)
|Y
V
SD
1
⎯
⎯
|
fs
⎯
⎯
⎯
30 40
35 55
4.5
0.7 1.2 V
3 V
⎯
VDS = VGS, ID = 250μA
V
mΩ
V
S
V
VGS = 0V, IS = 1A
= 10V, ID = 4.5A
GS
= 4.5V, ID = 3.5A
GS
= 10V, ID = 4.3A
DS
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
⎯
iss
C
⎯
oss
C
⎯
rss
R
⎯
G
Total Gate Charge (VGS = 10V) Qg ⎯
Total Gate Charge (VGS = 4.5V) Qg ⎯
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
AR
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Q
⎯
s
Q
⎯
d
t
⎯
D(on
t
⎯
t
⎯
D(off
t
⎯
f
t
⎯
r
Q
⎯
r
1287
57
44
1.2
22.4
10.4
4.9
3.0
6.6
8.1
20.1
4.0
18
11.9
⎯
⎯
⎯
pF
= 25V, VGS = 0V
V
DS
f = 1.0MHz
⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯
⎯
⎯
nC
= 30V, ID = 4.3A
V
DS
⎯
⎯
⎯
⎯
nS
= 10V, VDD = 30V, RG = 6Ω,
V
GS
= 4.3A
I
D
⎯
⎯
⎯
nS
IS = 4.3A, dI/dt = 100A/μs
nC
IS = 4.3A, dI/dt = 100A/μs
DMN6040SSS
Document number: DS35709 Rev. 3 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
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