Diodes DMN6040SSD User Manual

1

DMN6040SSD

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

I

V

(BR)DSS

60V

R

DS(on) max

40mΩ @ V

55mΩ @ VGS = 4.5V

= 10V

GS

D

TA = 25°C

5.0A

4.4A

Description and Applications

This new generation MOSFET has been designed to minimize the on­state resistance (R
performance, making it ideal for high efficiency power management
applications.

• DC-DC Converters

• Power management functions

• Backlighting

ADVANCE INFORMATION

Top View Top View

) and yet maintain superior switching

DS(on)

G1

S2

G2

Pin Configuration

Features and Benefits

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SO-8

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

• Weight: 0.074 grams (approximate)

D1S1

D

D2

D1

D2

G1

G2

D2

S1

Equivalent Circuit

S2

Ordering Information (Note 4)

Part Number Case Packaging

DMN6040SSD-13 SO-8 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

4. For packaging details, go to our website at http://www.diodes.com.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

Marking Information

DMN6040SSD

Document number: DS35673 Rev. 3 - 2

Top View

8 5

N6040SD

YY

WW

1 4

www.diodes.com

1 of 6

Logo

Part no.

Xth week: 01 ~ 53
Year: “11” = 2011

May 2012

© Diodes Incorporated

θ

)

g

g

)

r

)

r

r

Maximum Ratings @T

= 25°C unless otherwise specified

A

DMN6040SSD

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 10V

Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH

Steady

State

t<10s

= 25°C

T

A

T

= 70°C

A

T

= 25°C

A

= 70°C

T

A

V

DSS

V

GSS

I

D

I

D

I

S

I

DM

I

AS

E

AS

60 V

±20 V

5.0

4.1

6.6

5.3

A

A

2.5 A
30 A

14.2 A
10 mJ

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

= 25°C

T

Total Power Dissipation (Note 5)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 5)

Total Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range

A

TA = 70°C

Steady state

t<10s 61

= 25°C

T

A

TA = 70°C

Steady state

t<10s 50

R

R

R

T

J, TSTG

P

D

JA

θ

P

D

JA

θ

JC

1.3

0.8

102

1.7

1.1

W

°C/W

W

75

°C/W

14.5

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I

DSS

I

GSS

DSS

60

⎯ ⎯
⎯ ⎯
⎯ ⎯

100 nA

±100

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

SD

| ⎯

fs

1

⎯
⎯

⎯

⎯

3 V
30 40
35 55

4.5

⎯

0.7 1.2 V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. I

and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C

AR

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

C

⎯

iss

C

⎯

oss

C

⎯

rss

R

⎯

G

Q

s

Q

d

t

D(on

t

t

D(off

t

f

t

r

Q

r

⎯

⎯
⎯
⎯
⎯
⎯
⎯

⎯

⎯

⎯

1287

57
44

1.2

22.4

10.4

4.9

3.0

6.6

8.1

20.1

4.0
18

11.9

⎯
⎯
⎯
⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
⎯

⎯
⎯
⎯
⎯
⎯
⎯

⎯

⎯

⎯

V

VGS = 0V, ID = 250μA
VDS = 60V, VGS = 0V

nA

VGS = ±20V, VDS = 0V

VDS = VGS, ID = 250μA

= 10V, ID = 4.5A

V

mΩ

GS

VGS = 4.5V, ID = 3.5A

S

V

= 10V, ID = 4.3A

DS

VGS = 0V, IS = 1A

= 25V, VGS = 0V

V

pF

nC

nS

nS
nC

DS

f = 1.0MHz

= 30V, ID = 4.3A

V

DS

V

= 10V, VDD = 30V, RG = 6Ω,

GS

= 4.3A

I

D

IS = 4.3A, dI/dt = 100A/μs
IS = 4.3A, dI/dt = 100A/μs

DMN6040SSD

Document number: DS35673 Rev. 3 - 2

2 of 6

www.diodes.com

May 2012

© Diodes Incorporated