Diodes DMN6040SK3 User Manual

Product Summary

I

V

(BR)DSS

60V

R

DS(on) max

40mΩ @ V

50mΩ @ VGS = 4.5V

= 10V

GS

D

TC = +25°C

20A
16A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• DC-DC Converters

• Power Management Functions

• Backlighting

TO252

GS

Top View Top View

DMN6040SK3

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252 (DPAK)

• Case Material: Molded Plastic, “Green” Molding Compound UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin Finish annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

D

D

Internal Schematic

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMN6040SK3-13 TO252 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN6040SK3

Document number: DS35733 Rev. 5 - 2

N6040S

YYWW

1 of 6

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Logo

Part no.

.

Xth week: 01 ~ 53
Year: “11” = 2011

June 2014

© Diodes Incorporated

)

g

g

)

r

)

r

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

Steady

State

T

= +25°C

C

= +100°C

T

C

TC = +100°C

= +25°C

T

C

DMN6040SK3

V

DSS

V

GSS

I

D

I

S

I

DM

I

AR

E

AR

P

D

R

θJA

R

θJC

T

J, TSTG

60 V

±20 V

20
13

A

4 A

30 A

14.2 A
10 mJ

42
17
44

3

W

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS

DSS

GSS

60

⎯ ⎯
⎯ ⎯
⎯ ⎯

1 µ

±100

V

VGS = 0V, ID = 250µA

A

V

= 60V, VGS = 0V

nA

DS

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS(ON)

V

SD

1

⎯
⎯

⎯

⎯

30 40

35 50

3 V

mΩ

0.7 1.2 V

VDS = VGS, ID = 250µA

= 10V, ID = 20A

V

GS

VGS = 4.5V, ID = 12A
VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = 10V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

6. UIS in production with L = 0.1mH, T

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

= +25°C.

J

t

t

Q
Q

D(on

t

D(off

t

t

Q

s

d

f

r

r

⎯
⎯
⎯

⎯
⎯

⎯
⎯
⎯
⎯
⎯
⎯

⎯

⎯

⎯

1287

57

44

1.2

22.4

10.4

4.9

3.0

6.6

8.1

20.1

4.0
18

11.9

⎯
⎯

pF

⎯
⎯ Ω
⎯

⎯
⎯

nC

⎯
⎯
⎯
⎯

nS

⎯

⎯

⎯

nS
nC

= 25V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 30V, ID = 4.3A

DS

= 10V, VDD = 30V, RG = 6Ω,

V

GS

I

= 4.3A

D

IS = 4.3A, dI/dt = 100A/μs
IS = 4.3A, dI/dt = 100A/μs

DMN6040SK3

Document number: DS35733 Rev. 5 - 2

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R

C

URR

T

R

CUR

R

T

R

R

OUR

ON-R

R

R

OUR

ON-R

R

R

OUR

CE ON-R

TANC

R

R

OUR

C

DMN6040SK3

20

16

(A)

EN

12

8

AIN

D

I, D

4

0

0 0.5 1.0 1.5 2.0 2.5 3.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 1 Typical Output Characteristic

0.10

Ω

0.09

0.08

20

V = 5.0VDS

16

(A)

EN

12

8

AIN

T = 150°C

D

I, D

4

0

01 2 3 45

V , GATE-SOURCE VOLTAGE (V)

GS

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

Fig. 2 Typical Transfer Characterist ics

0.10

Ω

0.08

0.07

ESISTANCE ( )

0.06

0.05

CE

AIN-S

, D

0.04

0.03

0.02

V= 4.5V

GS

V= 10V

GS

0.01

DS(ON)

0

04 8121620

I , DRAIN-SOURCE CURRENT (A)

D

Fig. 3 Typical On- Resistance vs.

Drain Current and Gate Voltage

0.10

Ω

0.09

E ( )

0.08

V = 4.5VGS

T = 150°C

A

0.07

ESIS

0.06

0.05

T = 125°C

A

T = 85°C

A

0.04

T = 25°C

0.03

A

AIN-S

, D

0.02

T = -55°C

A

0.01

DS(ON)

0

04 8121620

I , DRAIN CURRENT (A)

D

Fig. 5 Typical On-Resistance vs.

Drain Current and Temperature

ESISTANCE ( )

0.06

I= 4.5A

CE

D

I= 3.5A

D

0.04

AIN-S

0.02

, D

DS(ON)

0

012345678910

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 4 Typical On-Resi stance vs.

Drain Current and Gate Voltage

2.4

2.2

V=V

10

2.0

1.8

E

GS

I = 10A

D

1.6

1.4

1.2

AIN-S

1.0

, D

0.8

DS(ON)

0.6

ON-RESISTANCE (NORMALIZED)

0.4

0.2

0

-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)

J

Fig. 6 On-Resistance Variation with Temperature

V = 4.5V

GS

I= 5A

D

°

DMN6040SK3

Document number: DS35733 Rev. 5 - 2

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R

RAIN-SOUR

C

O

N-R

TAN

C

GATE THRESH

O

OLTAG

OUR

CE CUR

RENT

G

TE T

H

R

H

O

OLT

G

R

CUR

RENT

DMN6040SK3

0.10

Ω

E ( )

0.08

4.0

3.5

E (V)

3.0

ESIS

V = 4.5V

0.06

E

GS

I = 500mA

D

0.04

V= V

2.5

GS

I = 200mA

D

0.02

, D

DS(ON)

0

-50-25 0 255075100125150
T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 7 On-Resistance Variation with Temperature

2.5

LD V

I= 1mA

2.0

1.5

I= 250µA

D

D

1.0

0.5

GS(th)

V,

0

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 8 Gate Threshold Variation vs. Ambient Temperature

20

16

(V)

T = 25°C

12

A

8

S

I, S

4

0

0 0.2 0.4 0.6 0.8 1.0 1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 9 Diode Forward Voltage vs. Current

V = 30V

DS

I= A

4. 3

D

E (V)
A

LD V

ES

C

iss

C

oss

T

C , JUNCTION CAPACITANCE (pF)

f = 1MHz

0

51015202530

V , DRAIN-SOURCE VOLTAGE (V)

DS

C

rss

Fig. 10 Typical Junction Capacitance

(A)

AIN

100

10

P = 10ms

W

P = 1ms

P = 10µs

W

W

R

DS(ON)

Limited

DC

P = 100ms

W

1

P = 100µs

W

P = 1µs

W

D

I, D

A

GS

V

0 5 10 15 20 25

Q(nC)

, TOTAL GATE CHARGE

g

Fig. 11 Gate Charge

0.1

T = 150°C

J(max)

T = 25°C

A

V = 10V

GS

Single Pulse
DUT on 1 * MRP Board

0.01

0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)

DS

Fig 12 SOA, Safe Operation Area

DMN6040SK3

Document number: DS35733 Rev. 5 - 2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

2X b2

E

b3

L3

D

L4

e

3X b

A

c2

A2

H

A1

L

a

E1

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Y2

Y1

X2

Z

C

X1

E1

Dimensions Value (in mm)

Z 11.6
X1 1.5
X2 7.0
Y1 2.5
Y2 7.0

C 6.9
E1 2.3

DMN6040SK3

Dim Min Max Typ

A1 0.00 0.13 0.08
A2 0.97 1.17 1.07

b2 0.76 1.14 0.95
b3 5.21 5.46 5.33

c2 0.45 0.58 0.531

D1 5.21

E1 4.32

L3 0.88 1.27 1.08
L4 0.64 1.02 0.83

TO252

A 2.19 2.39 2.29

b 0.64 0.88 0.783

D 6.00 6.20 6.10

− −

e

− −

E 6.45 6.70 6.58

H 9.40 10.41 9.91
L 1.40 1.78 1.59

a 0° 10°

All Dimensions in mm

2.286

− −

−

DMN6040SK3

Document number: DS35733 Rev. 5 - 2

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© Diodes Incorporated

IMPORTANT NOTICE

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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

DMN6040SK3

DMN6040SK3

Document number: DS35733 Rev. 5 - 2

6 of 6

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June 2014

© Diodes Incorporated