Diodes DMN6040SK3 User Manual

Product Summary

I

V

(BR)DSS

60V

R

DS(on) max

40mΩ @ V

50mΩ @ VGS = 4.5V

= 10V

GS

D

TC = +25°C

20A
16A

Description

This new generation MOSFET has been designed to minimize the on-

state resistance (R

performance, making it ideal for high efficiency power management

applications.

) and yet maintain superior switching

DS(ON)

Applications

• DC-DC Converters

• Power Management Functions

• Backlighting

TO252

GS

Top View Top View

DMN6040SK3

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

• Low Input Capacitance

• Low On-Resistance

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: TO252 (DPAK)

• Case Material: Molded Plastic, “Green” Molding Compound UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish – Matte Tin Finish annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.33 grams (approximate)

D

D

Internal Schematic

e3

Ordering Information (Note 4)

Part Number Case Packaging

DMN6040SK3-13 TO252 2,500/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

DMN6040SK3

Document number: DS35733 Rev. 5 - 2

N6040S

YYWW

1 of 6

www.diodes.com

Logo

Part no.

.

Xth week: 01 ~ 53
Year: “11” = 2011

June 2014

© Diodes Incorporated

)

g

g

)

r

)

r

r

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 5) VGS = -10V

Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6)
Avalanche Energy (Note 6)

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range

Steady

State

T

= +25°C

C

= +100°C

T

C

TC = +100°C

= +25°C

T

C

DMN6040SK3

V

DSS

V

GSS

I

D

I

S

I

DM

I

AR

E

AR

P

D

R

θJA

R

θJC

T

J, TSTG

60 V

±20 V

20
13

A

4 A

30 A

14.2 A
10 mJ

42
17
44

3

W

°C/W

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

DSS

DSS

GSS

60

⎯ ⎯
⎯ ⎯
⎯ ⎯

1 µ

±100

V

VGS = 0V, ID = 250µA

A

V

= 60V, VGS = 0V

nA

DS

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Diode Forward Voltage

V

GS(th

R

DS(ON)

V

SD

1

⎯
⎯

⎯

⎯

30 40

35 50

3 V

mΩ

0.7 1.2 V

VDS = VGS, ID = 250µA

= 10V, ID = 20A

V

GS

VGS = 4.5V, ID = 12A
VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance

C

iss

C

oss

C

rss

R

G

Total Gate Charge (VGS = 10V) Qg
Total Gate Charge (VGS = 4.5V) Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

6. UIS in production with L = 0.1mH, T

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

= +25°C.

J

t

t

Q
Q

D(on

t

D(off

t

t

Q

s

d

f

r

r

⎯
⎯
⎯

⎯
⎯

⎯
⎯
⎯
⎯
⎯
⎯

⎯

⎯

⎯

1287

57

44

1.2

22.4

10.4

4.9

3.0

6.6

8.1

20.1

4.0
18

11.9

⎯
⎯

pF

⎯
⎯ Ω
⎯

⎯
⎯

nC

⎯
⎯
⎯
⎯

nS

⎯

⎯

⎯

nS
nC

= 25V, VGS = 0V

V

DS

f = 1.0MHz

VDS = 0V, VGS = 0V, f = 1.0MHz

V

= 30V, ID = 4.3A

DS

= 10V, VDD = 30V, RG = 6Ω,

V

GS

I

= 4.3A

D

IS = 4.3A, dI/dt = 100A/μs
IS = 4.3A, dI/dt = 100A/μs

DMN6040SK3

Document number: DS35733 Rev. 5 - 2

2 of 6

www.diodes.com

June 2014

© Diodes Incorporated