Diodes DMN2230U User Manual

Features

• Low On-Resistance

• 110 mΩ @ V

• 145 mΩ @ V

• 230 mΩ @ V

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 1, 2 and 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

= 4.5V

GS

= 2.5V

GS

= 1.8V

GS

SOT23

Top View

N-CHANNEL ENHANCEMENT MODE MOSFET

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding

Compound. UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Weight: 0.008 grams (approximate)

D

GS

Top View

DMN2230U

Ordering Information (Note 4)

Part Number Case Packaging

DMN2230U-7 SOT23 3000/Tape & Reel

Notes: 1. No purposefully added lead. Halogen and Antimony Free.

4. For packaging details, go to our website at http://www.diodes.com.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Product manufactured with Green Molding Compound and does not contain Halogens or Sb

Fire Retardants.

2O3

Marking Information

Date Code Key

Year 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016 2017

Code U V W X Y Z A B C D E

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

DMN2230U

Document number: DS31180 Rev. 5 - 2

22N

www.diodes.com

22N = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)

YM

M = Month (ex: 9 = September)

1 of 5

January 2012

© Diodes Incorporated

θ

)

g

g

g

)

r

)

DMN2230U

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)

V

DSS

V

GSS

I

D

I

DM

20 V

±12 V

2.0 A
7 A

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 5)

NEW PRODUCT

Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

P

D

R

JA

, T

T

J

STG

600 mW
208 °C/W

-55 to +150 °C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

BV

I
I

GSS

DSS

DSS

20

⎯ ⎯
⎯ ⎯
⎯ ⎯

±10 μA

V

VGS = 0V, ID = 10μA

1

μA

VDS = 20V, VGS = 0V
V

= ±12V, VDS = 0V

GS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 7)

V

GS(th

R

DS (ON)

|Y
V

SD

0.5

⎯

⎯

|

fs

⎯

1.0 V

⎯

81

110

113

145
230

⎯

mΩ

S

170

5

0.8 1.1 V

VDS = VCS, ID = 250μA
V

= 4.5V, ID = 2.5A

GS

VGS = 2.5V, ID = 1.5A
VGS = 1.8V, ID = 1.0A
VDS = 5V, ID = 2.4A
VGS = 0V, IS = 1.05A

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time

t
Rise Time
Turn-Off Delay Time

t
Fall Time

Notes: 5. Device mounted on FR-4 PCB, or minimum recommended pad layout

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

C

⎯

iss

C

⎯

oss

C

⎯

rss

Q

⎯

Q

⎯

s

Q

⎯

d

⎯

d(on

t

⎯

⎯

d(off

t

⎯

f

188

44
30

2.3

0.3

0.5
8

3.8

19.6

8.3

⎯
⎯
⎯

⎯

⎯

⎯

⎯
⎯
⎯
⎯

pF
pF
pF
nC
nC
nC

ns

= 10V, VGS = 0V

V

DS

f = 1.0MHz

= 10V, ID = 11.6A

V

DS

= 10V, RL = 10Ω

V

DD

I

= 1A, V

D

GEN

= 4.5V, RG = 6Ω

DMN2230U

Document number: DS31180 Rev. 5 - 2

2 of 5

www.diodes.com

January 2012

© Diodes Incorporated