Diodes DMN2215UDM User Manual

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Features

• Dual N-Channel MOSFET

• Low On-Resistance

• 100mΩ @V

• 140mΩ @V

• 215mΩ @V

= 4.5V, ID = 2.5A

GS

= 2.5V, ID = 1.5A

GS

= 1.8V, ID = 1A

GS

• Very Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• ESD Protected Gate to 2kV HBM

• Lead Free By Design/RoHS Compliant (Note 2)

• "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

NEW PRODUCT

ESD PROTECTED TO 2kV

DMN2215UDM

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Mechanical Data

• Case: SOT-26

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020D

• Terminal Connections: See Diagram

• Terminals: Finish ⎯ Matte Tin annealed over Copper

leadframe. Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 4

• Ordering Information: See Page 4

• Weight: 0.015 grams (approximate)

D

1

S

1

D

2

TOP VIEW

SOT-26

G

1

S

2

G

2

Schematic and Pin Configuration

TOP VIEW

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Drain Current (Note 1)

T

Pulsed Drain Current ( Note 4)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range

Notes: 1. Device mounted on FR-4 PCB, or minimum recommended pad layout

4. Pulse width ≤ 10μs, duty cycle ≤ 1%.

2. No purposefully added lead.

3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

DMN2215UDM

Document number: DS31176 Rev. 4 - 2

T

= 25°C

A

= 85°C

A

V

DSS

V

GSS

I

D

I

DM

PD

R

JA

θ

TJ, T

STG

1 of 4

www.diodes.com

20 V

±12 V

2.0

1.4

A

7.0 A

650 mW
192 °C/W

-55 to +150 °C

© Diodes Incorporated

June 2008

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage (Note 5)

DYNAMIC CHARACTERISTICS

Input Capacitance
Output Capacitance

NEW PRODUCT

Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Notes: 5. Short duration pulse test used to minimize self-heating effect.

10

BV

IDSS
IGSS

V

GS(th)

R

DS (ON)

|Y
V

C
C
C

t

d(on)

t

d(off)

DSS

fs

SD

iss
oss
rss

t

r

t

t

|

⎯

20

⎯ ⎯
⎯ ⎯
⎯ ⎯

0.6

⎯

80

105
165

5

⎯

0.73 1.1 V

⎯

188

⎯

44

⎯

30

⎯

8

⎯

3.8

⎯

19.6

⎯

8.3

⎯

8

V

1

μA

±10 μA

1.0 V

100
140

mΩ

215

S

⎯

pF

⎯

pF

⎯

pF

⎯
⎯
⎯

ns

⎯
⎯

DMN2215UDM

VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
V

= ±12V, VDS = 0V

GS

VDS = VCS, ID = 250μA
VGS = 4.5V, ID = 2.5A
VGS = 2.5V, ID = 1.5A

V

= 1.8V, ID = 1.0A

GS

VDS =5V, ID = 2.4A
VGS = 0V, IS = 1.05A

V

= 10V, VGS = 0V

DS

f = 1.0MHz

= 10V, RL = 10Ω

V

DD

I

= 1A, V

D

= 4.5V, RG = 6Ω

GEN

8

6

4

2

0

DMN2215UDM

Document number: DS31176 Rev. 4 - 2

2 of 4

www.diodes.com

7

6

5

4

3

2

1

0

0 0.5 1 1.5 2 2.5 3 3.5 4

© Diodes Incorporated

June 2008