Diodes DMN21D2UFB User Manual

NEW PRODUCT

Product Summary

max

I

D

TA = 25°C

760mA
700mA
500mA
350mA

V

(BR)DSS

20V

R

0.99 @ V

1.2 @ VGS = 2.5V

2.4 @ VGS = 1.8V

3.0 @ VGS = 1.5V

DS(ON)

max

= 4.5V

GS

Description and Applications

This MOSFET has been designed to minimize the on-state resistance
(R

) and yet maintain superior switching performance, making it

DS(on)

ideal for high efficiency power management applications.

• General Purpose Interfacing Switch

ADVANCE INFORMATION

• Power Management Functions

ADVANCE INFORMATION

• Analog Switch

ESD PROTECTED

X1-DFN1006-3

Bottom View

DMN21D2UFB

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits

• Low On-Resistance

• Very low Gate Threshold Voltage, 1.0V max

• Low Input Capacitance

• Fast Switching Speed

• Ultra-Small Surface Mount Package 1mm x 0.6mm

• Low Package Profile, 0.5mm Maximum Package height

• ESD Protected Gate

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminal Connections Indicator: See diagram

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

S

D

G

Top View

Package Pin Configuration

e4

Gate

Gate
Protection
Diode

Equivalent Circuit

Drain

Source

Body
Diode

Ordering Information (Note 4)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMN21D2UFB-7B NN 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMN21D2UFB

Document number: DS35564 Rev. 5 - 2

DMN21D2UFB-7B

NN

Top View

Bar Denot es Gate and Source Side

1 of 6

www.diodes.com

NN = Product Type Marking Code

May 2012

© Diodes Incorporated

)

g

g

)

r

)

NEW PRODUCT

Maximum Ratings @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current (Note 6) VGS = 4.5V

Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 7)

Thermal Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Value Units

Total Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

ADVANCE INFORMATION

Total Power Dissipation (Note 5)

ADVANCE INFORMATION

Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range

Steady

State

t<5s

DMN21D2UFB

V

DSS

V

GSS

T

= 25°C

A

= 70°C

T

A

T

= 25°C

A

T

= 70°C

A

T

= 25°C

A

TA = 70°C

Steady State

t<5s 244

T

= 25°C

A

TA = 70°C

Steady State

t<5s 106

I

D

I

D

I

S

I

DM

R

R

T

J, TSTG

P

D

JA

θ

P

D

JA

θ

20 V
±12 V
760

610
850

700

0.8 A

1.0 A

0.38

0.25
325

0.9

0.57
141

-55 to 150

mA

mA

W

°C/W

W

°C/W

°C

Electrical Characteristics @T

= 25°C unless otherwise specified

A

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current @Tc = 25°C I
Gate-Source Leakage

BV

I

DSS
DSS
GSS

20 - - V

- - 100 nA

- - ±1 A

VGS = 0V, ID = 250A
VDS = 20V, VGS = 0V

VGS = ±10V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transfer Admittance
Diode Forward Voltage

V

GS(th

R

DS (ON)

|Y
V

fs

SD

0.4 - 1.0 V

- 0.6 0.99

- 0.7 1.2

- 0.9 2.4

- 1.2 3.0

180 - - mS

|

- 0.6 1.0 V

VDS = VGS, ID = 250A

= 4.5V, ID = 100mA

V

GS

V

= 2.5V, ID = 50mA

Ω

GS

V

= 1.8V, ID = 20mA

GS

V

= 1.5V, ID = 10mA

GS

VDS = 10V, ID = 400mA

VGS = 0V, IS = 150mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

C

iss

C

oss

C

rss

Total Gate Charge VGS = 4.5V Qg
Total Gate Charge VGS = 10V Qg
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time

Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

8. Short duration pulse test used to minimize self-heating effect.

6.

Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

9. Guaranteed by design. Not subject to product testing.

t

t

Q
Q

D(on

t

D(off

t

s
d

f

- 27.6 - pF

- 4.0 - pF

- 2.8 - pF

- 0.41 - nC

- 0.93 - nC

- 0.06 - nC

- 0.06 - nC

- 3.5 - ns

- 4.2 - ns

- 19.6 - ns

- 9.8 - ns

= 16V, VGS = 0V,

V

DS

f = 1.0MHz

V

= 10V, ID = 250mA

DS

= 10V, VGS = 4.5V,

V

DD

= 47, RG = 10,

R

L

I

= 200mA

D

DMN21D2UFB

Document number: DS35564 Rev. 5 - 2

2 of 6

www.diodes.com

May 2012

© Diodes Incorporated